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TRIETHANOLAMINE TRIACETATE is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

3002-18-4

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3002-18-4 Usage

Chemical Properties

dark brown liquid

Check Digit Verification of cas no

The CAS Registry Mumber 3002-18-4 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 3,0,0 and 2 respectively; the second part has 2 digits, 1 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 3002-18:
(6*3)+(5*0)+(4*0)+(3*2)+(2*1)+(1*8)=34
34 % 10 = 4
So 3002-18-4 is a valid CAS Registry Number.

3002-18-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 11, 2017

Revision Date: Aug 11, 2017

1.Identification

1.1 GHS Product identifier

Product name 2-[bis(2-acetyloxyethyl)amino]ethyl acetate

1.2 Other means of identification

Product number -
Other names 2,2',2''-nitrilotrisethyl triacetate

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:3002-18-4 SDS

3002-18-4Relevant academic research and scientific papers

Photocurable resin composition, dry film thereof, pattern forming method, and electrical/electronic part protective film

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, (2012/05/04)

A photocurable composition includes: (A) an epoxy group-containing polymer compound having repeating units represented by the following formula (1), where R1 to R4 are each a hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each 0 or a positive number, such that 0 (c+d)/(a+b+c+d) ≤ 1.0, and X and Y are each the formula (2) or (3), provided that at least one group of the formula (3) is present, (B) a photoacid generator represented by the formula (8) and (C) a solvent.

Resist composition and patterning process

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, (2010/02/17)

The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

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, (2010/04/23)

A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

Photo acid generator, chemical amplification resist material and pattern formation method

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, (2008/06/13)

A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process

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, (2008/06/13)

Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.

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