420-42-8Relevant articles and documents
Arsine, antimony and phosphine substitutes
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, (2008/06/13)
The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoro-organometallic compounds M(CF3)3, M(CF2CF3)3, or any M(CnF(2n+1))3-yHycompound where (y2CF3)3 or any fluoroalkyl organometallics of the general formula M(CnH[(2n+1)-x]Fx)3-yHy, where y2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy; and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products. Specifically, the use of tris-trifluoromethyl arsenic (As(CF3)3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.
