53238-24-7Relevant articles and documents
Layered Post-Transition-Metal Dichalcogenides (X?M?M?X) and Their Properties
Luxa, Jan,Wang, Yong,Sofer, Zdenek,Pumera, Martin
, p. 18810 - 18816 (2016)
AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal
Polymorphism of Ga//2S//3 and Phase Diagram of Ga-S.
Pardo, M. P.,Tomas, A.,Guittard, M.
, p. 1677 - 1684 (1987)
The monoclinic form ( alpha prime ) of Ga//2 S//3 is exactly stoichiometric and is stable from room temperature to the melting point. The hexagonal form ( alpha ) and the wurtzite-type form ( beta ) exist only at high temperature, above 885 degree C; their formation requires a very small sulfur deficiency and, consequently, they are obtained in the presence of GaS. The passage from the hexagonal form to the wurtzite form is progressive and depends on the proportion of GaS. The blende-type form is clearly substoichiometric (GaS//1//. //3//8) and exists only in a small temperature range. The phase diagram is described from GaS//0//. //9//6 to GaS//1//. //5//6.
Bauch, Christopher G.,Johnson, Curtis E.
, p. 165 - 170 (1989)
Structural and optical characterization of indium and gallium indium sulfide films prepared by modulated flux deposition
Sanz,Guillen,Gutierrez
, p. 3367 - 3372 (2007)
Indium and gallium indium sulfide thin films were deposited on soda-lime glass substrates at 350°C, in a wide range of sulfur delivery conditions, by Modulated Flux Deposition (MFD). Indium sulfide films were highly crystalline β-In2S3 (tetragonal) with Eg = 2.68 eV. Depending on the availability of sulfur, gallium indium-poor sulfide films consisted on metal-rich hexagonal β-GaS layers or stoichiometric amorphous films with Eg = 3.0-3.3 eV. Finally, gallium indium-rich sulfide films formed a mixture of β-In2S3 and β-GaS that became near amorphous as more sulfur was supplied; a bandgap energy of E g = 2.44 eV was found.
Syntheses, structures, and nonlinear-optical properties of metal sulfides Ba2Ga8MS16 (M = Si, Ge)
Liu, Bin-Wen,Zeng, Hui-Yi,Zhang, Ming-Jian,Fan, Yu-Hang,Guo, Guo-Cong,Huang, Jin-Shun,Dong, Zhen-Chao
, p. 976 - 981 (2015)
Two new metal sulfides, Ba2Ga8MS16 (M = Si, Ge), have been synthesized by high-temperature solid-state reactions. They are isostructural and crystallize in the noncentrosymmetric space group P63mc (No. 186) with a = 10.866(5) ?, c = 11.919(8) ?, and z = 2 for Ba2Ga8SiS16 (1) and a = 10.886(8) ?, c = 11.915(3) ?, and z = 2 for Ba2Ga8GeS16 (2). Their three-dimensional frameworks are constructed by corner-sharing mixed (Ga/M)S4 (M = Si, Ge) and pure GaS4 tetrahedra, with Ba2+ cations filling in the tunnels. Compounds 1 and 2 are transparent over 0.42-20 μm and have wide band gaps of around 3.4 and 3.0 eV, respectively. Polycrystalline 2 displays strong nonlinear second-harmonic-generation (SHG) intensities that are comparable to that of the benchmark AgGaS2 (AGS) with phase-matching behavior at a laser irradiation of 1950 nm. Of particular interest, compound 2 also possesses a high powder laser-induced damage threshold of ～22 times that of AGS. The alternate stacking of the mixed (Ga/M)S4 (M = Si, Ge) tetrahedral layer with the pure GaS4 tetrahedral layer along the c axis and the alignment of these two types of tetrahedra in the same direction may be responsible for the large SHG signals observed.
Photoelectrical properties of layered GaS single crystals and related structures
Caraman,Chiricenco,Leontie,Rusu
, p. 3195 - 3201 (2008)
The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni-GaS(Cu)-In and GaS(Cu)-ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, ～400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO-GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250-700 nm.
Uniform and high-quality submicrometer tubes of GaS layered crystals
Hu,Bando,Zhan,Liu,Golberg
, p. 1 - 3 (2005)
GaS, group III-VI semiconductor compound, is known to possess a layered structure. In this letter, uniform and high-quality GaS submicrometer tubes have been synthesized via a simple high-temperature thermal reaction route. Each GaS tube is uniform in size, and has length up to tens of microns and outer diameter of ～200-900 nm; some of the tubes are partially filled with liquid metallic Ga rods. Photoluminescence spectrum reveals that the GaS tubes have two strong emission bands centered at ～585 and ～615 nm. Possible reaction processes and a rolling-up growth mechanism of as-grown GaS tubes were briefly discussed.
Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films
?i?ica, Tomá?,Světlík, Tomá?,Dostál, Libor,R??i?ka, Ale?,R??i?ka, Květoslav,Bene?, Ludvík,Němec, Petr,Bou?ka, Marek,Jambor, Roman
, p. 18817 - 18823 (2016)
Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1Ga(μ-S)]3(1) and [L2Ga(μ-S)]2(2) containing either N,C,N- or C,N-chelating ligands L1or L2(Lsup
