71243-84-0Relevant academic research and scientific papers
Electronic conductivity of In2O3 solid solutions with ZrO2
Sasaki,Seifert,Gauckler
, p. 2759 - 2768 (1994)
The electrical conductivity of In2O3-ZrO2 as well as In2O3 solid solutions doped with SnO2, CeO2, Nb2O5, Pr6O11, and MgO is investigated, in the temperature range between room temperature and 1300°C, and in the oxygen partial pressure range between 5 × 10-5 and 1 atm. In2O3 doped with ZrO2 is an electronic conductor, while ZrO2 doped with In2O3 is an oxygen-ionic conductor. The two-phase material of the cubic (fcc) ZrO2 + cubic (bcc) In2O3 solid solutions is a 3-dimensional composite of ionic and electronic conductors. The single-phase In2O3 doped with ZrO2 is an electronic conductor with a conductivity up to 7 × 104 Sm-1 in air. Two maxima in electrical conductivity are found, one in the two-phase region and one in the In2O3 single-phase region. Lattice defects responsible for electronic conduction in pure and doped In2O3 are discussed. The defect models for In2O3 doped with ZrO2 are proposed, and the Kroger-Vink diagram is constructed. The metastable solubility of dopants in In2O3 due to the slow phase separation kinetics influences the electronic conductivity. ZrO2 is a most effective donor for increasing electronic conductivity of In2O3, among hypervalent metal oxides including SnO2, Nb2O5, and CeO2.
Performance of InSnZrO as transparent conductive oxides
Zhang,Yu,Jin,Ge,Yin
, p. 955 - 962 (2010/09/04)
InSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium-tin-oxide (ITO) target and a zirconium target. X-ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical- electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10-3 to 2.20 × 10-3 ωcm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein-Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.
