Journal of the Electrochemical Society p. 2759 - 2768 (1994)
Update date:2022-08-22
Topics:
Sasaki
Seifert
Gauckler
The electrical conductivity of In2O3-ZrO2 as well as In2O3 solid solutions doped with SnO2, CeO2, Nb2O5, Pr6O11, and MgO is investigated, in the temperature range between room temperature and 1300°C, and in the oxygen partial pressure range between 5 × 10-5 and 1 atm. In2O3 doped with ZrO2 is an electronic conductor, while ZrO2 doped with In2O3 is an oxygen-ionic conductor. The two-phase material of the cubic (fcc) ZrO2 + cubic (bcc) In2O3 solid solutions is a 3-dimensional composite of ionic and electronic conductors. The single-phase In2O3 doped with ZrO2 is an electronic conductor with a conductivity up to 7 × 104 Sm-1 in air. Two maxima in electrical conductivity are found, one in the two-phase region and one in the In2O3 single-phase region. Lattice defects responsible for electronic conduction in pure and doped In2O3 are discussed. The defect models for In2O3 doped with ZrO2 are proposed, and the Kroger-Vink diagram is constructed. The metastable solubility of dopants in In2O3 due to the slow phase separation kinetics influences the electronic conductivity. ZrO2 is a most effective donor for increasing electronic conductivity of In2O3, among hypervalent metal oxides including SnO2, Nb2O5, and CeO2.
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