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923-34-2

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923-34-2 Usage

Safety Profile

Spontaneously flammable in air.

Check Digit Verification of cas no

The CAS Registry Mumber 923-34-2 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 9,2 and 3 respectively; the second part has 2 digits, 3 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 923-34:
(5*9)+(4*2)+(3*3)+(2*3)+(1*4)=72
72 % 10 = 2
So 923-34-2 is a valid CAS Registry Number.
InChI:InChI=1/3C2H5.In/c3*1-2;/h3*1H2,2H3;/rC6H15In/c1-4-7(5-2)6-3/h4-6H2,1-3H3

923-34-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name triethylindigane

1.2 Other means of identification

Product number -
Other names triethyl indium

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:923-34-2 SDS

923-34-2Relevant articles and documents

Maury, F.,Constant, G.

, p. 581 - 584 (1984)

Zirconium-catalyzed reaction of terminal alkenes with triethylindium

Ramazanov,Dil'Mukhametova,Dzhemilev

, p. 1253 - 1256 (2013/11/06)

Terminal alkenes (undec-1-ene, oct-1-ene, and allylbenzene) reacted with triethylindium in the presence of a catalytic amount of Cp2ZrCl 2 in hexane to give mixtures of three organoindium compounds whose hydrolysis in D2O afforded 2-substituted 1,4-dideuterobutane containing minor amounts of 2-substituted 1- and 4-deuterobutanes.

Preparation of organometal compounds

-

Page 6, (2008/06/13)

A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.

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