963-96-2Relevant academic research and scientific papers
COMPOUND FOR HARD MASK, HARD MASK COMPOSITION COMPRISING SAID COMPOUND, AND METHOD FOR FORMING SEMICONDUCTOR ELEMENT FINE PATTERN USING SAID COMPOUND
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Paragraph 0278-0283, (2020/12/15)
The present invention relates to a compound for a hard mask, a hard mask composition comprising the same, and a method for forming a fine pattern of a semiconductor element using the same. The compound for a hard mask according to the present invention has high solvent solubility that can be applied to a spin coating method, and thus it is possible to prepare a hard mask composition that not onlyhas excellent gap filling performance, but also has excellent heat resistance and etching resistance after curing. In addition, it is possible to provide a fine pattern forming method of a semiconductor element using the same.
Efficient Synthesis of Anthraquinones from Diaryl Carboxylic Acids via Palladium(II)-Catalyzed and Visible Light-Mediated Transformations
Kim, Kiho,Min, Minsik,Hong, Sungwoo
supporting information, p. 848 - 852 (2017/03/11)
Irradiation of 9-ester-substituted anthracenes with visible light results in the formation of endoperoxides in the absence of a photocatalyst, which further undergo base-assisted fragmentation to afford anthraquinones. The excited state species of anthracene generated by energy transfer, interacts with 3O2 to afford 1O2 by energy transfer and undergoes cycloaddition with 1O2. By employing palladium(II)-catalyzed and visible light-mediated transformations, we have developed an efficient synthetic protocol for accessing diverse anthraquinones from readily available diaryl carboxylic acids. The optimal result was obtained with palladium(II) acetate, Ac-Ile-OH, benzoquinone and potassium carbonate in tert-amyl alcohol under O2 at 90 °C with irradiation from a 30 W fluorescent light bulb. (Figure presented.).
Anthracene derivatives
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, (2008/06/13)
An anthracene derivative having at least two groups of the formula: STR1 wherein R1 and R2 are independently hydrogen, alkyl, alkoxy, etc., is particular effective for forming an antireflection coating for preventing multiple reflection of exposing light from a highly reflective substrate, etc.
Deep ultraviolet absorbent and its use in pattern formation
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, (2008/06/13)
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
