963-96-2Relevant articles and documents
COMPOUND FOR HARD MASK, HARD MASK COMPOSITION COMPRISING SAID COMPOUND, AND METHOD FOR FORMING SEMICONDUCTOR ELEMENT FINE PATTERN USING SAID COMPOUND
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Paragraph 0278-0283, (2020/12/15)
The present invention relates to a compound for a hard mask, a hard mask composition comprising the same, and a method for forming a fine pattern of a semiconductor element using the same. The compound for a hard mask according to the present invention has high solvent solubility that can be applied to a spin coating method, and thus it is possible to prepare a hard mask composition that not onlyhas excellent gap filling performance, but also has excellent heat resistance and etching resistance after curing. In addition, it is possible to provide a fine pattern forming method of a semiconductor element using the same.
Anthracene derivatives
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, (2008/06/13)
An anthracene derivative having at least two groups of the formula: STR1 wherein R1 and R2 are independently hydrogen, alkyl, alkoxy, etc., is particular effective for forming an antireflection coating for preventing multiple reflection of exposing light from a highly reflective substrate, etc.