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2,6-Dimethoxy-9,10-anthraquinone is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

963-96-2

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963-96-2 Usage

Chemical group

Derived from anthraquinone

Physical state

Bright orange solid at room temperature

Uses

Dye intermediate in production of pigments and colorants, synthesis of pharmaceuticals and inks

Molecular weight

268.26 g/mol

Known for

Strong color intensity, used as coloring agent in various industrial applications

Check Digit Verification of cas no

The CAS Registry Mumber 963-96-2 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 9,6 and 3 respectively; the second part has 2 digits, 9 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 963-96:
(5*9)+(4*6)+(3*3)+(2*9)+(1*6)=102
102 % 10 = 2
So 963-96-2 is a valid CAS Registry Number.

963-96-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name 2,6-dimethoxyanthracene-9,10-dione

1.2 Other means of identification

Product number -
Other names 9,10-Anthracenedione, 2,6-dimethoxy-

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:963-96-2 SDS

963-96-2Relevant academic research and scientific papers

COMPOUND FOR HARD MASK, HARD MASK COMPOSITION COMPRISING SAID COMPOUND, AND METHOD FOR FORMING SEMICONDUCTOR ELEMENT FINE PATTERN USING SAID COMPOUND

-

Paragraph 0278-0283, (2020/12/15)

The present invention relates to a compound for a hard mask, a hard mask composition comprising the same, and a method for forming a fine pattern of a semiconductor element using the same. The compound for a hard mask according to the present invention has high solvent solubility that can be applied to a spin coating method, and thus it is possible to prepare a hard mask composition that not onlyhas excellent gap filling performance, but also has excellent heat resistance and etching resistance after curing. In addition, it is possible to provide a fine pattern forming method of a semiconductor element using the same.

Efficient Synthesis of Anthraquinones from Diaryl Carboxylic Acids via Palladium(II)-Catalyzed and Visible Light-Mediated Transformations

Kim, Kiho,Min, Minsik,Hong, Sungwoo

supporting information, p. 848 - 852 (2017/03/11)

Irradiation of 9-ester-substituted anthracenes with visible light results in the formation of endoperoxides in the absence of a photocatalyst, which further undergo base-assisted fragmentation to afford anthraquinones. The excited state species of anthracene generated by energy transfer, interacts with 3O2 to afford 1O2 by energy transfer and undergoes cycloaddition with 1O2. By employing palladium(II)-catalyzed and visible light-mediated transformations, we have developed an efficient synthetic protocol for accessing diverse anthraquinones from readily available diaryl carboxylic acids. The optimal result was obtained with palladium(II) acetate, Ac-Ile-OH, benzoquinone and potassium carbonate in tert-amyl alcohol under O2 at 90 °C with irradiation from a 30 W fluorescent light bulb. (Figure presented.).

Anthracene derivatives

-

, (2008/06/13)

An anthracene derivative having at least two groups of the formula: STR1 wherein R1 and R2 are independently hydrogen, alkyl, alkoxy, etc., is particular effective for forming an antireflection coating for preventing multiple reflection of exposing light from a highly reflective substrate, etc.

Deep ultraviolet absorbent and its use in pattern formation

-

, (2008/06/13)

A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.

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