Reference

Fast setting adhesive composition

Fast setting adhesive composition. Okitsu, Toshinao; Uchida, Tomio (Konishi Co., Ltd.Several substances are used for example 26426-80-2 and 111-30-8 which are their cas registry numbers., Japan). U.S. US 4431757 A 14 Feb 1984, 9 pp. (English). (United States of America). CODEN: USXXAM. CLASS: IC: C08L007-02; C08L009-00; C08J003-02. NCL: 524025000. APPLICATION: US 82-399735 19 Jul 1982. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) A 2-part, fast-setting adhesive compn. comprises, as the 1st part, a polyamide-imide resin or a synthetic or naturally occurring resin or rubber, and, as the 2nd part, a dialdehyde curing agent. Thus, an isobutylene-maleic anhydride copolymer was heated to 180° in an ammonium atm. to give an isobutylene-maleic anhydride-maleimide polymer (I) (2:1:1). Then I 40, 25% aq. NH3 7, and water 80 parts were heated 2 h at 85° to give a 33% solids soln. The soln. 10, poly(vinyl acetate) [9003-20-7] 24, and CaCO3 7 parts were mixed to give soln. A. A 15% aq. glyoxal [107-22-2] was soln. B. Soln. A was applied to a wood sample, and soln. B was applied to another wood sample. When the samples were pressed together for 30 s, the compression shear bond strength was 26 kg/cm2 after 5 min curing and 197 kg/cm2 after 24 h. .

Oxidation processes on cadmium selenide and selenium electrodes

Oxidation processes on cadmium selenide and selenium electrodes. Sears, W. M.; Morrison, S. Roy (Fac. Sci. 1306-24-7 and 67-56-1 are also occured in this study., Simon Fraser Univ., Burnaby, BC V5A 1S6, Can.). J. Phys. Chem., 88(5), 976-80 (English) 1984. CODEN: JPCHAX. ISSN: 0022-3654. DOCUMENT TYPE: Journal CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) Section cross-reference(s): 22, 23 Hole capture by various aldehydes, org. acids,. and alcs. was measured on CdSe and Se-coated CdSe. CH2O [50-00-0] and glyoxal [107-22-2] are oxidized by current doubling, i.e., by reacting with photoproduced holes from the valence band of n-type CdSe and then reinjecting electrons into the conduction band. This, however, only occurred in basic soln., and none of the other species tested showed this reaction. The photodecompn. of CdSe in neutral soln. proceeds as a current-multiplying reaction. These processes occurred just as readily with the Se layer, and it is concluded that the layer is porous. Mechanisms for these reactions are discussed. .