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Detail of > 13759-10-9

  • CAS Number:
  • 13759-10-9
  • Name:
  • Silicon sulfide (SiS2)

  • Formula:
  • S2Si
  • Molecular Structure:
  • Synonyms:
  • Silicondisulfide;
  • Molecular Weight:
  • 92.2155
  • EINECS:
  • 237-344-8
  • Melting Point:
  • 1090 °C
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CAS No. 

13759-10-9 Silicon sulfide (SiS2)

SILICON DISULFIDE
United States  
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CAS No. 

13759-10-9 Silicon sulfide (SiS2)

China (Mainland)   12
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    Reference

    Fibrous thiosilicates and their crystal chemical analogs: considerations as infrared materials
    Fibrous thiosilicates and their crystal chemical analogs: considerations as infrared materials. White, William B.; Veni, George; Steele, Sarah; Knight, Diane S. (Mater. Res. Lab., Pennsylvania State Univ., University Park, PA 16802, USA). Proc. SPIE-Int. Soc. Opt. Eng., 683(Infrared Opt. Transm. Mater.), 104-8 (English) 1986. CODEN: PSISDG. ISSN: 0277-786X. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 78 Sulfide analogs of IR-transmitting fibrous silicates were studied as potential materials for IR windows. Some approaches to their synthesis and characterization are discussed along with some preliminary results. 13759-10-9 and 12025-34-2 are just another two chemicals used in this study. Raman spectra of SiS2 and GeS2, end-member components of the thiosilicate and thiogermanate series, were measured. .
    Transparent gas-barrier thin film-layered polymer film
    Transparent gas-barrier thin film-layered polymer film. Yamada, Yasumi (Toppan Printing Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 2004042412 A2 12 Feb 2004, 8 pp. (Japanese). (Japan).There are some reagents with their cas registry numbers 1344-28-1 and 13759-10-9 are used in this study. CODEN: JKXXAF. CLASS: ICM: B32B009-00. ICS: C23C014-06; C23C014-08; C23C014-20. APPLICATION: JP 2002-202305 11 Jul 2002. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) Section cross-reference(s): 74 The film with high water vapor impermeability for liq. crystal displays, org. electroluminescent displays, etc., is obtained by alternately stacking metal oxide thin films and metal sulfide or metal phosphide thin films to satisfy total layer no. 6-20 on a polymer film. Thus, three 10 nm-thick SiO2 films and three 15 nm-thick SiS2 films were alternately deposited on a polyester film by reactive d.c. sputtering to give a gas-barrier film showing water vapor permeability 0.08 g-m-2-day-1 and light transmittance 87% at 550 nm. .

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