Detail of > 16872-11-0
- MSDS Download

- CAS Number:
- 16872-11-0
- Name:
Fluoroboric acid
- Formula:
- HBF4
- Molecular Structure:

- Synonyms:
- Borate(1-),tetrafluoro-, hydrogen (8CI,9CI);Fluoboric acid (HBF4) (6CI);Borofluoricacid;HBF4;Hydrogen tetrafluoroborate;Hydrogentetrafluoroborate(1-);Tetrafluoroboric acid;
- Molecular Weight:
- 87.81
- EINECS:
- 240-898-3
- Density:
- 1.38 g/cm3
- Melting Point:
- -90 °C
- Boiling Point:
- 130 °C (dec.)
- Flash Point:
- -40 °F
- Solubility:
- MISCIBLE
- Appearance:
- colourless liquid
- Hazard Symbols:
C- Risk Codes:
- 34
- Safety:
- 26-36/37/39-45-37Details
- Transport Information:
- UN 1775 8/PG 2
- Deleted CAS:
- 36835-64-0|496925-14-5|547767-06-6|65814-43-9|67116-13-6|72802-72-3|74618-51-2|81586-24-5|900178-90-7|96958-96-2
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Reference
- High-resolution sputter etching
- High-resolution sputter etching. Fraser, David B.; Lou, David Y. K. (Bell Telephone Laboratories, Inc., USA). U.S. US 3975252 17 Aug 1976, 6 pp. (English). (United States of America). CODEN: USXXAM. CLASS: IC: C23C015-00. NCL: 204192000. APPLICATION: US 75-558489 14 Mar 1975. DOCUMENT TYPE: Patent CA Section: 56 (Nonferrous Metals and Alloys) Section cross-reference(s): 73, 76 A complicated arrangement of a masked 5-layer sheet assembly is described for obtaining an elec. cond. pattern of max. sharpness of a metal such as Au on a substrate such as Mylar [9003-68-3] film by removing metal from unmasked areas only by perpendicular ion bombardment through openings in masks of submicron thickness, thus avoiding undercutting by etch solns. The sputtering for such removal is done in a halocarbon atm., generally at 0.1-50.0 mtorr, such as CCl4 to CHCl2F, with a large range of radio-frequency activation power. A 3-layer cond. pattern is formed on a noncond. substrate. The outer coating was a sputter-resist, 0.3 .mu. thick, then a thin Ti layer, under it a thicker Au layer, followed by thin layers of Pt and Ti on Mylar. The sputter-etching in a halocarbon atm. of low pressure removed the outer resist and unprotected 1st Ti, leaving only the protected Ti pattern, then the sputter atm. was changed to Ar contg. >10% air, and the etching removed Au and Pt from unprotected areas, while forming a protective oxide coating on the Ti exposed on the Au pattern, as well as the Ti-coated areas not covered by the pattern. Finally the exposed Ti surfaces were almost entirely removed by sputter etching in a halocarbon atm., but the final cleaning of the remaining Au pattern was done chem. by an HBF4 [16872-11-0] aq. soln. The process can also be used for simpler 3-layer assemblies.
- Study of the stability of diazonium salts stabilized by various methods
- Study of the stability of diazonium salts stabilized by various methods. Lakstauskas, J.; Meskauskas, K. (Kaunas. Politekh. Inst., Kaunas, USSR). Chem. Chem. Technol., Tech. Mokslu Isvystymo Resp. Ju Rezult. Panaudojimo Konf. Medziaga, 35-6. Edited by: Bernatonis, J. Kauno Politech. Inst.: Kaunas, USSR. (Russian) 1974. CODEN: 34ADAC. DOCUMENT TYPE: Conference CA Section: 39 (Textiles) Formation of azo dyes directly on the modified Kapron fibers using 2,5-dichlorobenzenediazonium [15470-55-0] was carried out at pH 1.5-2.5 and 3.5-4.5 and temps. .ltoreq.85 and .ltoreq.70.degree. 15470-55-0 and 1655-29-4 which are cas registry numbers of substances are two of reagents here., resp., with ZnCl2 [7646-85-7] and sodium 1,5-napthalenedisulfonate [1655-29-4] and at .ltoreq.55.degree. with HBF4 [16872-11-0] as stabilizers. .
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