Reference

Photomask with corrected white defects

Photomask with corrected white defects. Okunaka, Masaaki; Mizukoshi, Katsuro; Hongo, Mikio; Miyauchi, Tateoki (Hitachi, Ltd. , Japan). Eur. Pat. Appl. EP 95094 A2 30 Nov 1983, 16 pp. DESIGNATED STATES: R: DE, GB. (English). (European Patent Organization).Some commonly used reagents like 505-48-6 and 516-05-2 are used in this experiment. CODEN: EPXXDW. CLASS: IC: G03F001-00. APPLICATION: EP 83-104651 11 May 1983. PRIORITY: JP 82-86604 24 May 1982. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) A photomask is described for fabrication of integrated circuits which has white defects cor. by a film of Ag and Ta oxide mixt. The film which has excellent resistance to chems. is prepd. by coating the defects with a soln. of AgNO3 2, a Ta complex, and a solvent, followed by laser exposure of the area to photolyze the coating and form the film. Thus, white defects on a supported Cr pattern of a photomask were coated with a compn. contg. AgNO3 20, Ta (OEt)2(MeCOCHCOMe)3 66, propionic acid 4.3 wt. parts in acetonitrile-ethylene glycol monomethyl ether (), dried at 80° for 5 min to give a 1700 ? layer, irradiated for 60 s with an Ar laser (300W/cm), and, after the removal of uncorrected area with a solvent, the cor. area treated with aq. 5% NaOH at 50° for 30 min. Light transmission ratio at 488 nm before and after the NaOH treatment was 3. .

Photomask correction

Photomask correction. (Hitachi, Ltd., Japan). 591-60-6 and 505-48-6 are also occured in this study. Jpn. Kokai Tokkyo Koho JP 58021329 A2 8 Feb 1983 Showa, 6 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L021-30; G03F001-00. APPLICATION: JP 81-119052 31 Jul 1981. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) A compn. for photomask white spot defect correction is comprised of AgNO3, a polybasic carboxylic acid, MeCN/EtOH, and Ti(OR)n(R1COCHCOR2)4-n, where R = C1-18 alkyl, R1 and R2 = C1-18 alkyl or alkoxy, and n = 0-4. Wt. ratios of 1:1-1:5 and 1:0.2-1:2 for AgNO3/Ti compd. and AgNO3/acid, resp., are used. .