Detail of "593-90-8"

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CAS Number:
593-90-8
Name:
Borane, trimethyl-
Molecular Structure:
Formula:
C3H9 B
Molecular Weight:
55.91
Synonyms:
Trimethylborane;Trimethylboron
EINECS:
209-816-3
Density:
0.559 g/cm³
Melting Point:
-161,5°C
Boiling Point:
20 °C at 760 mmHg
Flash Point:
°C
Appearance:
colorless gas
Risk Codes:
11-17-34
Safety:
The gas ignites spontaneously in air or when mixed with chlorine. When heated to decomposition it emits acrid smoke and irritating fumes. See also BORANES and BORON COMPOUNDS. Details

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Simultaneous manufacture of trialkylboron and alkyldihaloaluminum compounds: Simultaneous manufacture of trialkylboron and alkyldihaloaluminum compounds. Synoradzki, Ludwik; Boleslawski, Marek; Pasynkiewicz, Stanislaw; Jaworski, Krzysztof; Zawadzki, Mieczyslaw; Ratajczak, Lucjan (Politechnika Warszawska; Instytut Ciezkiej Syntezy Organicznej "Blachownia", Pol.). Pol. PL 120074 B1 25 Jul 1983, 2 pp. (Polish). (Poland). CODEN: POXXA7. CLASS: IC: C07F005-06. APPLICATION: PL 79-215916 28 May 1979. DOCUMENT TYPE: Patent CA Section: 29 (Organometallic and Organometalloidal Compounds) R3B and RAlX2 were prepd. simultaneously by reaction of B2O3 with sesquialkylchloroaluminum. Thus, a mixt. of 500 g Me3Al2Cl3 contg.In this experiment, several chemicals are used like 1303-86-2 and 593-90-8 60% MeAlCl2 and 25 g B2O3 was stirred 10 h at 170° to give 38.1 g Me3B and 298 g MeAlCl2. .

A p-type amorphous semiconductor film: A p-type amorphous semiconductor film. Nakajima, Yukio; Haku, Hisao; Watanabe, Kaneo; Matsuoka, Tsugifumi (Sanyo Electric Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 62043120 A2 25 Feb 1987 Showa, 3 pp. (Japan) CODEN: JKXXAF.Several reagents with their cas registry numbers 593-90-8 and 409-21-2 are used here. CLASS: ICM: H01L021-205. ICS: H01L031-04. APPLICATION: JP 85-183349 20 Aug 1985. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 75 A method for photochem. vapor deposition of a p-type amorphous semiconductor film (e.g., SiC) involves utilization of a Group IVA element source gas and BMe3 dopant gas to effect doping, as well as making the band gap of the amorphous film wider. Addnl., a C source may be used for making the band gap wider. .