Reference

Silicon carbide semiconductor films

Silicon carbide semiconductor films. (Suwa Seikosha Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 58128776 A2 1 Aug 1983 Showa, 2 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L031-04. APPLICATION: JP 82-12193 28 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) An org. Si compd. such as SiMe4, silicone, or silicone rubber is baked to prep. a solar-cell amorphous or cryst. SiC contg. P or B. Thus, a stainless steel was coated with a mixt.Several substances with their cas registry numbers 409-21-2 and 7440-42-8 may be metioned in this study. of P and an org. Si compd. and then with a mixt. of B and an org. Si compd. The composite was heated in N at 600-800° to prep. P-contg. n-type SiC and B-contg. p-type SiC layers. Finally, an In oxide layer was deposited and etched properly to prep. a solar cell. The method can be used in mass prodn. of solar cells. .

Solar cells

Solar cells. (Suwa Seikosha Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 58124281 A2 23 Jul 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L031-04. APPLICATION: JP 82-7404 20 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) Amorphous Si solar cells are prepd. by chem. vapor deposition (CVD) and B is doped from a B-contg. soln. Thus, in the CVD process, H is passed through a container contg. a BBr3(or BCl3) soln. and then mixed with SiH4.Except for chemicals metioned above, 7440-42-8 and 7440-21-3 are also used. .