Communications
coordination mode of the silane. In h2-SiH complexes, the M–
corresponding to different rotamers about the Ir H and Si H
bonds. For each complex, structural data are presented for
two distinct minima in which the SiMe3 group is oriented
proximal and distal to the hydride ligand (e.g., Figure 2, 4p
and 4d, respectively). The calculated structure for 3d agrees
well with expectations based on X-ray data. The hydride
ligand occupies the apical site in the square pyramid (Ir–H
1.54 ). The hydrogen of the silane is positioned approx-
imately trans to C(aryl) (Ir–H(Si) 1.87 ). The Si–H distance
of 1.57 is ca. 0.08 longer than the calculated Si–H
À
À
Si distances remain relatively short.[4c,b,5a]
To provide insight into the structural and bonding features
of the h1-H(Si) binding mode, DFT studies[13] were performed
on the HSiMe3 analogue of 2 (3), as well as the HSiMe3
complex of model systems in which Me replaces all four tBu
groups (4), and Me replaces two cis tBu groups distal to the
hydride ligand (5). Selected metric parameters for the
calculated minima are listed in Table 1 and selected minima
for 3 and 4 are shown in Figure 2. The potential energy
surfaces for the silane complexes show multiple minima
À
distance in the parent silane, reflecting activation of the Si H
bond. The calculated Ir···Si non-bonding distance of 3.38
for 3d is similar to the X-ray distance of 3.35 . The
corresponding Ir-H1-Si angle is 1618. An Ir-H1-Si angle of
1808 might be expected for an h1-H(Si) interaction. The space-
filling diagram for 3d (Figure 2) shows close contact between
the SiMe groups and the Me groups on the tBu substituents,
and these interactions, together with similar close interactions
on the opposite face apparently dictate the Ir-H1-Si angle
adopted in 2.
Table 1: Selected bond lengths [] and angles [8] and energies from DFT
studies.
Cmpd
Ir-H1
Si-H1[a]
Ir···Si
Ir-H1-Si
Erel
[kcalmolÀ1 [b]
]
3p
3d
4p
4d
4d’
5d
5d’
1.865
1.870
1.785
1.753
1.751
1.757
1.752
1.572
1.572
1.576
1.605
1.653
1.609
1.646
3.379
3.395
3.169
2.887
2.619
2.871
2.626
158.7
161.0
141.1
118.5
100.5
117.0
101.2
0.0
À0.1
0.0
À0.9
À1.9
0.0
The reduced ligand steric bulk in trimmed 4 allows the
silicon in 4d to more closely approach Ir (Ir···Si 2.89 ).
Moreover, 4 shows a distinct minimum (4d’) with an even
shorter Ir–Si distance (Ir···Si 2.62 ), in which the silane
coordination is assisted by the formation of an axial agostic
interaction with a SiMe group (Figure 2) (H···Ir 2.25 ). The
development of the h2-SiH interaction is demonstrated by the
structural parameters of the series of complexes, 4p, 4d, and
4d’, with progressively longer H1–Si distances, shorter Ir–H1
and Ir–Si distances, and smaller Ir-H1-Si angles along the
series (see Table 1). The relative energies of 4p, 4d, and 4d’
are 0, À0.9, and À1.9 kcalmolÀ1, respectively, indicating that
the stabilization afforded by the h2-SiH interaction is small.
Trimmed 5 is electronically intermediate between 3 and 4.
The similar structural parameters and energetics of the d and
d’ minima for 4 and 5 are consistent with the assertion that the
steric properties of the ligand are driving the structural
changes in the trimmed complexes.
À0.9
[a] The calculated Si–H distance in HSiMe3 is 1.493 . [b] Difference in
electronic energies.
An NBO analysis[14] was conducted on the silane com-
plexes, and the natural charges are shown in Table 2.
Formation of the h1-H(Si) silane complex increases the
À
polarization of the Si H bond, with an accompanying
increase in charge on silicon by ca. 0.2 in comparison to the
free silane, and a decrease in the charge on hydrogen.
Table 2: Natural charges and NBO populations in the silane
complexes.[a]
Natural Charges
Si H(Si)
NBO Populations
s Si-H s* Ir-C Ir(dp*) s* Si-H
Ir
3p
3d
0.021 1.563 À0.281 1.796
0.011 1.554 À0.275 1.796
0.313
0.313
0.336
0.380
0.426
0.376
0.429
1.952
1.954
1.947
1.931
1.916
1.933
1.916
0.063
0.063
0.071
0.084
0.093
0.079
0.092
4p À0.011 1.540 À0.255 1.763
4d À0.051 1.476 À0.175 1.712
4d’ À0.116 1.441 À0.115 1.673
5d À0.038 1.490 À0.180 1.720
5d’ À0.123 1.449 À0.115 1.674
Figure 2. Selected minima for 3 and 4, and corresponding space-filling
diagrams (topview).
[a] In HSiMe3, the natural charges on Si and H are 1.345 and À0.196,
respectively.
4142
ꢀ 2008 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Angew. Chem. Int. Ed. 2008, 47, 4141 –4143