Angewandte
Chemie
DOI: 10.1002/anie.201304540
Organic Optoelectronics
Dynamically Adaptive Characteristics of Resonance Variation for
Selectively Enhancing Electrical Performance of Organic
Semiconductors**
Ye Tao, Jianjian Xiao, Chao Zheng, Zhen Zhang, Mingkuan Yan, Runfeng Chen,* Xinhui Zhou,
Huanhuan Li, Zhongfu An, Zhixiang Wang, Hui Xu,* and Wei Huang*
Controllably and selectively tuning molecular functions
through extensible and universal approaches is always one
of the most important and challenging issues for material
science. However, because of the intrinsic correlations
between the molecular properties, only certain molecular
structural strategies and inter-/intra-molecular effects are
effective for a particular property without negatively influ-
encing other properties, let alone applications, which is one of
the main hindrances for the further development of organic
optoelectronics after it has flourished for decades. Since
optical and/or electronic processes are involved in all of the
organic optoelectronic applications, for example, organic light
emitting diodes (OLEDs),[1] organic photovoltaic cells
(OPVs),[2] organic field-effect transistors (OFETs),[3] bio-/
chemo-/photo-sensors,[4] memories,[5] and lasers,[6] the intrinsic
contradiction between the optical and electronic properties of
organic conjugates gradually stands out, resulting in bottle-
necks in their device performances leaving them far from the
rigorous requirements of commercial applications. The sit-
uation of host development for phosphorescent OLEDs
(PHOLEDs) is one of the most typical embodiments under
the demands of balanced optoelectronic properties for
reducing operating voltage and improving device efficiencies,
taking account of high triplet energy (ET1) for exothermic
energy transfer to the guest, suitable frontier molecular
orbital (FMO) energy levels for charge injection, and optimal
molecular configuration and composition for balanced carrier
transportation.[7] The inherent conflict between optical and
electrical properties originates from the dependence of
optoelectronic properties on molecular structures and fron-
tier orbital distributions and consequently their sensitivity to
modification, leading to solutions mainly focused on the
static-state molecular properties, such as ambipolar charac-
teristics of donor (D)–acceptor (A) structures. Recently, our
group developed several effective strategies, named short-axis
linkage,[8] multi-insulating linkage,[9] and indirect linkage,[10]
for constructing D–A and D-p-A type host materials with
diphenylphospine oxide (DPPO) as the acceptor and realizing
excellent device performance, such as ultralow driving
voltages (less than 3 V for onset) and high and stable
efficiencies.
Nevertheless, the intramolecular interactions, such as
forming low-energy charge transfer (CT) states, in compli-
cated D–A systems should be suppressed by insulating
linkages but at the cost of reducing electrical activity.
Actually, the static-state D–A configuration is inferior in
controlling optoelectronic properties owing to its definite
bipolar structure and limited variation, requiring more
accurate adjustment of the type and ratio of functional
groups for balanced electronic performance. Fortunately, in
À =
our previous work, a special effect of N P O on charge
redistribution by resonance variation was observed as
a potential approach for the adjustment of electrical charac-
teristics.[11] Resonance structures are proposed to describe
delocalized electrons within certain molecules where the
bonding cannot be expressed by one single Lewis formula
following the valence bond theory. These resonance struc-
tures are useful in evaluating the structures of delocalized
[*] Y. Tao,[+] J. J. Xiao,[+] Dr. C. Zheng, M. K. Yan, Dr. R. Chen,
Dr. X. H. Zhou, H. H. Li, Dr. Z. F. An, Z. X. Wang, Dr. H. Xu,
Prof. W. Huang
[+] These authors contributed equally to this work.
[**] This study was supported in part by the National Basic Research
Program of China (2009CB930601), National Natural Science
Foundation of China (21274065, 20804020, 61176020, and
21001065), the Ministry of Education of China (No. IRT1148 and
212039), Natural Science Foundation of Jiangsu Province
(BK2011751), A project funded by the priority academic program
development of Jiangsu higher education institutions, and Sup-
porting Program of New Century Excellent Talents of Ministry of
Education (NCET-12-0706).
Key Laboratory for Organic Electronics and Information Displays
(KLOEID), Institute of Advanced Materials (IAM)
Nanjing University of Posts and Telecommunications
Nanjing 210023 (P.R. China)
E-mail: iamrfchen@njupt.edu.cn
Z. Zhang, Dr. H. Xu
Key Laboratory of Functional Inorganic Material Chemistry
Ministry of Education, Heilongjiang University
74 Xuefu Road, Harbin 150080 (P.R. China)
E-mail: hxu@hlju.edu.cn
Supporting information for this article is available on the WWW
Prof. W. Huang
Jiangsu-Singapore Joint Research Center for Organic/Bio- Elec-
tronics & Information Displays and Institute of Advanced Materials
Nanjing University of Technology, Nanjing 211816 (P.R. China)
E-mail: wei-huang@nut.edu.cn
Angew. Chem. Int. Ed. 2013, 52, 10491 –10495
ꢀ 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
10491