5 undergoes a single, two-electron oxidation process,14 similar to
system 8,11 although the oxidation process for 5 is anodically
shifted compared to 8 (less gain in aromaticity in 52+, compared
to 82+) and is electrochemically more reversible than for 8 (cf. DEox
values from Table 1). The first oxidation potential of 5 is,
therefore, more comparable to that of a short oligo(phenyl-
enevinylene)15 or an oligo(alkylthiophene) fragment,16 than TTF
or compound 8. As expected, the fullerenopyrrolidine reduction
waves of 6 and 7 are cathodically shifted (by ca. 100 mV) in
comparison with the parent C60 due to saturation of one and two
double bonds, respectively. The electrochemical data for 6 and 7
suggest that there is no significant interaction between the donor
and acceptor moieties in the ground state. The HOMO–LUMO
gap for 6 calculated from the CV data (1.59 eV) is close to the
value obtained from PM3 calculations (1.52 eV).{
Macroscopic transport properties depend on the efficiency of
intermolecular hopping mechanisms within the 3D organisation.
There are two notable features of compound 6 in this regard. (i)
The C60 moiety appears to play a key role in determining the
supramolecular structure within the film, as good quality spin-cast
films could not be obtained for other derivatives of system 3 which
lacked a C60 substituent, e.g. compound 5. (ii) The 9-(1,3-dithiol-2-
ylidene)thioxanthene moiety is considerably non-planar in both the
neutral and oxidised redox states,14 unlike the oligothiophene10b
and oligophenyleneethynylene systems10c considered above.
These studies have demonstrated that system 3 is an interesting
and versatile p-electron donor. New derivatives will be reported in
due course. Current work is aimed at optimising OFET behaviour
while maintaining the benefits of solution processing.
We have fabricated OFETs using 6 as the active layer using
Acknowledgements
spin-coating techniques and
a standard top-contact device
We thank EPSRC and Avecia for funding, Dr D. Kreher for
assistance with the C60 reactions, and Dr I. F. Perepichka for
the PM3 calculations.
configuration.{ X-Ray diffraction experiments in reflection mode
showed evidence of polycrystallinity: the layer spacing from the
˚
first weak reflection peak (22 A) corresponds to the extended
molecular length of 6 calculated by PM3 methods. Transistor
responses were observed at both positive and negative bias which
means that compound 6 acts as a bipolar semiconductor (Fig. 1).
The field effect mobilities of holes and electrons calculated for
the film of compound 6 in the saturation regime2b are 1026 and
4 6 1025 cm2 V21 s21, respectively, with on/off current ratios of
ca. 102 for both p- and n-channels at Vds = 240 and +40 V,
respectively. These values compare favourably with other con-
temporary ambipolar systems.10 For examples, Kunugi et al.
reported 1.1 6 1025 and 4.3 6 1025 cm2 V21 s21, for
an oligothiophene–(C60)2 system;10b Nierengarten et al. reported
9.2 6 1028 and 7.0 6 1027 for an oligophenyleneethynylene–C60
system.10c Notably, the electron mobility is higher than the hole
mobility for all of these covalent compounds, although this is not
always the case with (non-covalent) blends.10a (For comparison,
pure C60 has a field effect mobility of up to 0.12 cm2 V21 s21 after
annealing,7b with on/off ratios as high as 106).7a
Samia Amriou, Aravinda Mehta and Martin R. Bryce*
Department of Chemistry and Centre for Molecular and Nanoscale
Electronics, University of Durham, Durham, UK DH1 3LE.
E-mail: m.r.bryce@durham.ac.uk
Notes and references
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Fig. 1 Drain current (ID) vs. drain voltage (VD) at different gate voltages
(VG) for OFETs with 6 as the active layer.
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