Chemical vapor deposition of boron nitride

Article abstract of DOI:10.1149/1.2069121

Thermodynamics and kinetics of boron nitride deposition from BCl₂-NH₃ gas mixtures were studied in the temperature range 850 to 1050°C at pressures between 1.1 and 3.5 Torr. A wide range of deposition rates, as high as 1 μm/min, were measured. The rate of deposition was controlled by an interface reaction with an activation energy of 35 ± 3 kcal/mol. The deposition rate constant essentially was independent of the partial pressure of NH₃ and showed a close to first-order dependence on the partial pressure of BCl₃. The rate-limiting step of the interface reaction may be the dissociative adsorption of BCl₃ onto the substrate surface. The deposited BN was of theoretical density, turbostratic structure, and contained about 12 atomic percent oxygen.

Full text of DOI:10.1149/1.2069121

Chemical Vapor Deposition of Boron Nitride
N. Patibandla and K. L. Luthra
J. Electrochem. Soc. 1992, Volume 139, Issue 12, Pages 3558-3565.
doi: 10.1149/1.2069121
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