Full text of DOI:10.1063/1.105622

High quality thin gate oxide prepared by annealing lowpressure chemical vapor
deposited SiO2 in N2O
J. Ahn, W. Ting, T. Chu, S. Lin, and D. L. Kwong
Citation: Applied Physics Letters 59, 283 (1991); doi: 10.1063/1.105622
View online: http://dx.doi.org/10.1063/1.105622
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/59/3?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
141.209.100.60 On: Sun, 21 Dec 2014 12:13:10

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
141.209.100.60 On: Sun, 21 Dec 2014 12:13:10

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
141.209.100.60 On: Sun, 21 Dec 2014 12:13:10