Full text of DOI:10.1063/1.106962

Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and
effects on electrical properties
M. Liehr and S. A. Cohen
Citation: Applied Physics Letters 60, 198 (1992); doi: 10.1063/1.106962
View online: http://dx.doi.org/10.1063/1.106962
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/60/2?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.123.44.23 On: Sat, 20 Dec 2014 13:57:25

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.123.44.23 On: Sat, 20 Dec 2014 13:57:25

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.123.44.23 On: Sat, 20 Dec 2014 13:57:25