Modifying the electrical properties of Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramics by the nanocrystals-induced method

Article abstract of DOI:10.1166/jnn.2016.13664

This work investigated the phase formation and electrical properties of Ba_0.85Ca_0.15Zr_0.1Ti_0.9O₃ (BCZT) prepared by the nanocrystals-induced method. We prepared the nanocrystals or seeds by the molten

Full text of DOI:10.1166/jnn.2016.13664

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Nanoscience and Nanotechnology
Vol. 16, 12956–12961, 2016
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Modifying the Electrical Properties of
Ba Ca Zr Ti O Ceramics by the
0ꢀ85
0ꢀ15
0ꢀ1 0ꢀ9
3
Nanocrystals-Induced Method
1
2
2
3ꢀ∗
Piewpan Parjansri , Manlika Kamnoy , Sukum Eitssayeam , and Uraiwan Intatha
1
Physics Division, Faculty of Science and Technology, Rajamangala University of Technology Krungthep, Bangkok 10120, Thailand
2
Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand
3
School of Science, Mae FahLuang University, 57100 Chiang Rai, Thailand
This work investigated the phase formation and electrical properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O3
(
BCZT) prepared by the nanocrystals-induced method. We prepared the nanocrystals or seeds by
the molten salt method, using CaCO3 and TiO oxides as starting materials. The CaTiO seeds
2
3
showed a pure perovskite phase, and we obtained a particle size of ∼300 nm. After that, we mixed
the CT seed with the starting powders of Ba Ca Zr Ti ceramic, prepared by the solid
O
3
0
ꢀ85
0ꢀ15 0ꢀ1 0ꢀ9
state reaction method. Results found that all ceramics showed a pure perovskite phase. The density
3
values were in the range of 5.51 to 5.64 g/cm , while relative density values were 96–99%. We mea-
sured the electrical properties (including dielectric, ferroelectric, and piezoelectric properties) as a
Delivered by Ingenta to: Florida State University, College of Medicine
function of CaTiO seed content. We obtained the highest dielectric constant (ꢁ ∼ 4239) and lowest
3
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
r
dielectric loss (tan ꢂ ∼ 0ꢀ010) measured at room temperature from a sample with x = 0.08. More-
Copyright: American Scientific Publishers
over, the BCZT doped with CaTiO seed (x = 0.10) showed the highest values for the piezoelectric
3
−
3
charge coefficient ꢃd ꢄ ∼ 477 pC/N, piezoelectric voltage coefficient ꢃg ꢄ ∼ 16 × 10 Vm/N, and
3
3
33
thickness mode electromechanical coupling ꢃk ꢄ ∼ 51ꢀ18%. Results suggested that CaTiO -seeds
t
3
enhanced the electrical properties of the BCZT ceramic using low calcination temperatures and
with less dwelling time.
Keywords: Molten Salt Method, Seed-Induced Method, Perovskite Phase, Piezoelectric
Properties.
1
. INTRODUCTION
the modified BT ceramics to receive considerable atten-
tion because of its high piezoelectric and dielectric proper-
Barium titanate (BaTiO ; BT) was the first useful lead-
3
free piezoelectric ceramic, and still receives considerable
attention because of its very high dielectric constant, mak-
ing it an excellent material for use as a capacitor. How-
ties. Liu and Ren have reported the Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9
O
3
3
ceramic with a high d33 value of ∼600 pC/N.
1
However, we obtained the highest d3 value using
3
ever, this ceramic exhibits poor piezoelectric properties.
Many researchers have studied and reported on the fabri-
cation and characterization of BT-based ceramics by var-
ious methods. The various ion substitutions in the A and
high calcination temperatures, sintering temperatures, and
dwelling times. Researchers have reported different pro-
cedures capable of reducing the calcination temperature,
while also improving the electrical properties of piezoelec-
tric ceramics. Researchers have widely studied the doping
of various metal oxides in BT-based and BCZT ceramics,
due to their resultant lower calcination temperatures and
improved piezoelectric properties. Recently, researchers
have reported a new methodology to reduce calcination
temperatures by using the seed-induced method and tem-
plate grain growth (TGG) method. Researchers well-know
that the seeding and template process in ceramics helps to
B sites of the BaTiO ceramic structure represent one of
3
the methods to enhance the electrical properties of those
ceramics. Researchers have studied the modification of BT
4
–6
ceramic by the addition of calcium (Ca) into the Ba site
2
(
A-site) and zirconium (Zr) into the Ti site (B-site). The
Ba0ꢀ85Ca0ꢀ15Zr Ti O ceramic system serves as one of
0ꢀ1
0ꢀ9
3
∗
Author to whom correspondence should be addressed.
2956 J. Nanosci. Nanotechnol. 2016, Vol. 16, No. 12
1
1533-4880/2016/16/12956/006
doi:10.1166/jnn.2016.13664

Parjansri et al.
Modifying the Electrical Properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O Ceramics by the Nanocrystals-Induced Method
3
develop a single crystal growth under controlled tempera-
ture conditions, observing good electrical properties. Li
et al. reported the perovskite phase formation and electri-
thickness and diameter about 2.0 mm and 10 mm, respec-
tively; afterwards, we sintered them at 1450 C for 4 h.
7
–9
ꢀ
We investigated the phase formation and microstructure
of the samples by X-ray diffraction (XRD) (XRD 6000,
Shimadzu) and scanning electron microscopy (SEM). For
electrical properties characterization, we polished the sin-
tered ceramics, and we coated both faces with silver as
electrodes. We investigated the dielectric properties of the
sintered ceramics as a function of frequency and tempera-
ture by using an automated dielectric measurement system
(E4980A Precision LCR meter). The coated samples had
an applied electric field of 1–2 kV/mm for measuring fer-
roelectric properties by using a Sawyer Tower circuit. We
poled the specimens by applying a DC field of 3 kV/mm
cal properties of Pb(Zn1/3Ta2/3ꢁO ceramic, prepared using
3
PbTiO3 as seeds, finding that a pure perovskite phase
could be formed at low calcination temperatures, while
obtaining a high dielectric constant (ꢂ ) and low dielec-
r
8
tric loss (tan ꢃ) for the seed-added sample. Ye et al. have
9
reported the template grain growth method, studying the
effect of BaTiO (BT) template on the electrical properties
3
of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ10Ti0ꢀ90O . Preparing the BT-template by
3
the molten-salt method and using a calcination tempera-
ꢀ
ture of 1100 C, these researchers found that the textured
BCZT ceramics (templates-added sample) showed a piezo-
electric coefficient of d33 ∼470 pC/N, an electromechani-
cal coefficient of k ∼ 40%, and a Curie temperature (T )
ꢀ
for 30 min in a silicone oil bath at 28 C. After 24 h,
we measured the piezoelectric charge coefficient (d ) by
p
C
33
higher than the sample without BT templates. The above
literature suggests that the seed-induced method and tem-
plate grain growth can enhance the electrical properties of
piezoelectric ceramics using a low calcination temperature.
In the present work, we prepared and characterized
Ba0ꢀ85Ca0ꢀ15Zr Ti O ceramics using the seed-induce
using a S5865 d33 meter (KCF Technologies). Moreover,
we calculated the piezoelectric voltage coefficient (g ) and
3
3
the electromechanical coupling coefficients (k ), plotted as
t
a function of the CT seed content
0ꢀ1
0ꢀ9
3
3
. RESULTS AND DISCUSSION
method. We used CaTiO (CT) prepared by the molten-
3
From the introduction section, many researchers have
carried out studies on developing lead-free piezoelectric
ceramics to replace the PZT-based ceramics in piezoelec-
tric applications.
salt method as seeds, because it exhibits different struc-
tures depending on the transition temperature and shows
1
0
an orthorhombic phase at room temperature. However,
we obtained the perovskite structure of CT powder from
a preparation by a mixed oxide method using a high cal-
Delivered by Ingenta to: Florida State University, College of Medicine
Ba Ca Zr Ti O ceramic represents one of
0
ꢀ85
0ꢀ15
0ꢀ1 0ꢀ9
3
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
ꢀ
11
the materials of interest, displaying the highest
cination temperature of about 1350 CC .o p yTr hi gu hs t, : wA em ue sr ei cd an Scientific Publishers
d
value. However, some electrical properties (e.g., ꢂ ,
3
3
r
nano-size particles of CT powder prepared by the molten
salt method as seed for producing the pure perovskite
phase, controlling the grain orientation and crystal orien-
tation direction and improving the electrical properties for
the BCZT ceramics.
tan ꢃ, and T ) still cannot compare with PZT-based
C
ceramics. Also, we obtained the highest d33 value at the
highest calcination temperature, using very long dwelling
times. The modification of crystal structure by controlling
the grain orientation serves as a well-known method to
enhance the properties and performance of piezoelectric
materials. In this research, we used the seed-induced
method. We successfully obtained BCZT ceramics, pre-
pared using the CT seed-induced method. We investigated
the phase structure, microstructure, and the electrical
properties. We synthesized the CT seed powder by the
molten-salt method. The phase formation of the CT seed
presented that we obtained pure perovskite with a small
particle size of about ∼300 nm, by using heating temper-
2
. EXPERIMENTAL DETAILS
We synthesized the Ba0ꢀ85Ca0ꢀ15Zr Ti O ceramic sam-
0ꢀ1
0ꢀ9
3
ples using the seed-induced method. We prepared the seed
via the molten salt method, using CaCO and TiO oxides
3
2
as starting materials. We mixed the starting powder by
ball-milling for 24 h, mixed with KCl–NaCl salt (1:1) for
ꢀ
3
0 min, then heated at 900 C for 2 h. Then, we washed
them with hot deionized water several times until finding
no trace of anion. After that, we mixed the CT seed with
the starting material of the BCZT system, prepared by the
mixed oxide method. We mixed stoichiometric amounts
of BaCO (99%, Sigma–Aldrich), CaCO (98.5–100.5%,
ꢀ
atures of 900 C for 2 h. We indexed the pure perovskite
phase of the CT seed in reference to the orthorhombic
structure of CaTiO (JCPDS No. 01-086-1393), confirmed
3
from XRD patterns, as shown in Figure 1. Inset (a)
in Figure 1 shows the microstructure of the CT seed
powder. We mixed the CT seed obtained with the metal
oxides of BCZT systems by the mixed oxide method.
The results showed that the non-seed sample and CT
seed-added sample possessed a pure perovskite phase,
as displayed in Figure 2. For the expanded graph of
3
3
Sigma–Aldrich), ZrO (99%, Sigma–Aldrich), TiO (99–
2
2
1
05.5%, Sigma–Aldrich), Nb O (99%, Sigma–Aldrich),
2 5
and CT seeds. We varied the CT seed content from 0.0 to
1
0.0 mol% (x = 0.0, 0.04, 0.08, and 0.10). We ball-milled
the mixed powder for 24 h using ethanol as a solvent with
zirconia grinding media, then dried in an oven at 120 C.
We calcined all ceramic powders at 1250 C for 2 h.
ꢀ
ꢀ
ꢀ
XRD patterns around 2ꢄ of 44–46 , the non-seed sample
Then, we pressed the calcined powder into a disk shape of
and seed-added samples showed a broad peak and sharp
J. Nanosci. Nanotechnol. 16, 12956–12961, 2016
12957

Modifying the Electrical Properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O Ceramics by the Nanocrystals-Induced Method
Parjansri et al.
3
Figure 3. SEM micrographs of sintered BCZT-CT seed surface.
Figure 1. XRD patterns and SEM micrograph of CaTiO -seed powder
heated at 900 C for 2 h.
3
ꢀ
size may be due to the excess CT particles accumulating
near the grain boundaries, leading to grain growth being
peaks, respectively. The peaks sharpness suggested an
increase in the crystallite size of the BCZT ceramics.
The XRD spectra suggested that the CT-seed changed the
phase structure of BCZT ceramics from the co-existence
1
3ꢅ14
interrupted during the sintering process.
The density
values of the samples for x = 0.08 and x = 0.10 showed
the highest value (with 99% of theoretical density) and
the lowest value, respectively, relating to the SEM micro-
1
2
of rhombohedral-orthorhombic to orthorhombic phase.
graphs. Figure 4 illustrates the dielectric constant (ꢂ ꢁ and
Figure 3 illustrates the SEM micrographs of BCZT-CT
r
ꢀ
dielectric loss (tan ꢃ) as s function of frequency measured
seed ceramics sintered at 1450 C for 4 h, showing a more
Delivered by Ingenta to: Florida Stat ea tUr no iov me r st ei tmy ,p eC r oa tl ul er ge ef o or ft Mh ee Bd iCc Zi n Te -CT seed ceramics. We
homogeneous and uniform grain for the CT-seed BCZT
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
observed that the CT seed had an effect on the dielectric
for x = 0.04 and x = 0.10 than the non-CT seed sample.
Copyright: American Scientific Publishers
properties of the BCZT ceramic. ꢂ showed little change
Conversely, we found the melting grain boundary for the
sample with x = 0.08. This result suggested that the grain
growth occurred close to the end.
r
with frequency for all samples, while we found the high-
est value for the sample with x = 0.08. The highest ꢂ
r
may have resulted from the dense ceramic, which related
Increasing CT seed content to x = 0.10 gave an effect
of the appearance of pores. Table I lists the grain sizes and
densities of all samples. The grain size tended to increase
with increasing CT seed content from x = 0.00–0.08, then
decreased for the x = 0.10 sample. The decreasing grain
1
5
to the density value. The tan ꢃ of all ceramics showed
significant changes with increasing frequency and CT seed
content, because the concentration of charge carriers was
1
6
not constant. Table I lists the value of ꢂ and tan ꢃ. The
r
results indicated that adding CT seed enhanced the maxi-
mum value of ꢂ ∼ 4239 and the lowest of tan ꢃ ∼ 0.01.
r
The dielectric properties analyzed as a function of tem-
ꢀ
ꢀ
perature in a range from 30 C to 250 C are shown in
Figure 5. Figure 5(a) displays the dielectric constant (ꢂr)
and dielectric loss (tanꢃ), with temperature measured at
1
kHz for all samples. Figure 5(b) shows the frequency
and temperature dependence of the dielectric constant (ꢂ ).
r
We observed that all ceramic samples showed a normal
ferroelectric behavior, confirmed by the maximum dielec-
tric constant peak. Researchers well-know that ferroelec-
tric behavior (relaxor and normal ferroelectric) can be
described from dielectric properties as a function of tem-
perature. In the case of relaxor ferroelectric behavior, the
dielectric constant at maximum peak showed a broader
peak and strong frequency dependence. For the normal fer-
roelectric, the dielectric constant had a weak dependence
1
7
ꢀ
on frequency and also a sharp dielectric peak. The above
mentioned theory considers that the CT seed additions
Figure 2. XRD patterns of BCZT-CT seed ceramics sintered at 1450 C
for 4 h.
12958
J. Nanosci. Nanotechnol. 16, 12956–12961, 2016

Parjansri et al.
Modifying the Electrical Properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O Ceramics by the Nanocrystals-Induced Method
3
Table I. Density, grain size and dielectric properties of ceramic samples.
a
a
Density
(g/cm )
GS
(ꢆm)
% Relative
density
Dielectric
(ꢂr)
Loss
(tan ꢃ)
Dielectric
Loss
TC
3
ꢀ
Samples
(ꢂr)
(tan ꢃ)
ꢇ C)
0.00
0.04
0.08
0.10
5.5964
5.5632
5.6415
5.5099
13.50
14.29
15.69
13.40
96.8
97.3
99.0
98.0
3672
3594
4239
3362
0.0139
0.0128
0.0106
0.0142
10939
10177
9653
0.0104
0.0096
0.0095
0.0100
100ꢀ24
100ꢀ15
84ꢀ98
10191
95ꢀ67
Note: aDielectric properties at Tc temperature.
have no effect on the BCZT ceramic structure. The dielec-
(Curie temperature; T ) shifted slightly toward a lower
c
tric constant (ꢂ ꢁ at the maximum peak or the phase transi-
temperature with increasing CT seed content. The Curie
r
tion point (Curie temperature; T ) tended to decrease with
temperature (T ) decreased potentially due to the random
c
c
increasing CT seed content from x = 0.0 to x = 0.08, then
substitution of CT seed particles, leading to the deforma-
3
ꢅ19
increased for the sample with x = 0.10.
tion of the ABO lattice.
Figure 6 plots the ferroelec-
3
The ꢂ of the ceramics showed a value in the range of
tric loop and parameters of the ferroelectric loop for the
BCZT-CT seed ceramics. From Figure 6, we found that the
Polarization (P) versus electric field (E) showed a grad-
ual change with CT seed content, as shown in Figure 6(a).
All samples showed slim P–E loops, typical for normal
ferroelectric hysteresis. The inset in Figure 6(a) expands
the polarization of the samples. Figure 6(b) presents plots
of the remnant polarization (P ) and coercive field (E )
r
9
653–10936. The decreasing ꢂ might have resulted from
r
the decreased dielectric polarization rotation. The addi-
tion of CT seed in the BCZT ceramic may result in a
1
8
decrease of dielectric polarization. As we well-know, the
dielectric properties depend on the microstructure of the
ceramic, especially the grain size and grain morphology
(
homogenous grain). The dielectric constant of a ceramic
r
c
1
8
strongly depends on the domain wall mobility. Moreover,
the change of dielectric constant may result from the inter-
nal stress that occurs at the phase transition temperature.
The uniform and homogenous grain of ceramics gener-
Delivered by Ingenta to: Florida State University, College of Medicine
ates less internal stress of the lattice, leading to an easier
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
movement of the domain wall.1 We can notice that the
8
Copyright: American Scientific Publishers
dielectric properties in the present work can be described
by the above mentioned theory; as for the sample with
x = 0.08, the dielectric at T decreased potentially because
c
the grain of the ceramic was not uniform.
Dielectric loss (tan ꢃ) was little changed in a tem-
ꢀ
ꢀ
perature range from 30 C to 200 C, with values less
than 0.01 for all samples, then tending to increase at
higher temperatures. The phase transition temperature
Figure 5. (a) Dielectric constant (ꢂ ) and dielectric loss (tanꢃ) as a
r
Figure 4. Frequency dependence of dielectric constant, ꢂr (a) and
dielectric loss, tanꢃ (b) for BCZT-CT seed ceramics.
function of temperature at 1 kHz and (b) dielectric constant (ꢂ ꢁ with
frequency for BCZT-CT seed ceramics.
r
J. Nanosci. Nanotechnol. 16, 12956–12961, 2016
12959

Modifying the Electrical Properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O Ceramics by the Nanocrystals-Induced Method
Parjansri et al.
3
Figure 7. Piezoelectric charge coefficient (d ), piezo-electric voltage
3
3
coefficient (g ) and thickness electromechanical coupling (k ) for BCZT-
3
3
t
CT ceramic.
For the characterization of piezoelectric and electrome-
chanical properties, we poled the electrode specimen
at room temperature by applying an electrical field of
3
kV/mm for 30 min. We then left it at room tempera-
ture for 24 h before measuring their piezoelectric coef-
ficient (d ). Figure 7 illustrates the piezoelectric charge
3
3
(
d ), piezoelectric voltage (g ) coefficient, and thickness
33 33
mode electromechanical coupling (k ) of the BCZT-CT
t
Delivered by Ingenta to: Florida State University, College of Medicine
seed ceramics. The results found that the d , g , and k
t
3
3
33
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
values showed similar behavior. Table II lists the values
Copyright: American Scientific Publishers
Figure 6. (a) Ferroelectric loops and (b) remnant polarization (P ) and
of d , k , and g . From the data, we saw that as the CT
r
33 t 33
coercive field (E ) analyzed at room temperature.
seed content increased from x = 0.00 to x = 0.08, the val-
c
ues tended to clearly decrease, then slightly increase for
of the BCZT-CT seed ceramics. The results indicated that
samples with x = 0.10. The highest d33 and k
477 and 51.18, respectively, found for the sample of CT
for the samples
t
values were
the P and E values had little change with CT seed. The
r
c
P values of the ceramics were in the range of 7.79–
seed (x = 0.10). The increasing d33 and k
t
r
2
9
.52 ꢆC/cm , and we obtained the highest value for the
with x = 0.10 related to the uniform grain that resulted
x = 0.04 sample (as listed in Table II).
in the domain wall movement, making domain reorienta-
2
2–25
The decreasing P values for samples with x = 0.08
tion easier during the poling process.
The piezoelec-
r
may have been due to the increase of inner stress with
higher CT seed addition, being related to the SEM micro-
graph showing grain boundary mobility and the achiev-
tric properties were dependent on the domain wall motion,
while domain wall motion was dependent on the dopant
(CT seed adding). On the other hand, the decreasing d33
able domain alignment decreased.2 The higher P value
0
and k values for the sample of x = 0.08 may have resulted
r
t
for samples of x = 0.00–0.04 and x = 0.10 was due to
the uniform and homogeneous grains leading to the eas-
ier reorientation and polarization switching of the domain
from the decreasing P , leading to the polarization switch-
r
ing being decreased. We determined the g value by using
3
3
2
6
expression (1):
2
1ꢅ22
walls during the electric field cycle.
d33
g =
(1)
3
3
ꢂ0ꢂr
Table II. Ferroelectric, piezoelectric and electromechanical properties
of BCZT-CT seed ceramics.
where ꢂ was permittivity of a free space, and ꢂ was
o
r
relative permittivity. The g values were in the range of
3
3
−3
−3
Pr
Ec
(kV/cm)
d33
(pC/N)
g33
(10 Vm/N)
kt
1.30×10 to 16.02×10 Vm/N. We obtained the high-
est g value for the sample with CT seed of x = 0.10. The
−3
Samples
(ꢆC/cm2 )
(%)
3
3
0.00
0.04
0.08
0.10
9.46
9.52
7.79
8.77
3.00
3.17
3.13
3.13
474
435
424
477
14.58
13.67
11.30
16.02
50.51
50.51
40.83
51.18
above results showed that the seed-induced method using
CaTiO as seed had a significant influence on the electrical
3
properties of the BCZT ceramic, by controlling the grain
growth and reducing the temperature for phase formation.
12960
J. Nanosci. Nanotechnol. 16, 12956–12961, 2016

Parjansri et al.
Modifying the Electrical Properties of Ba0ꢀ85Ca0ꢀ15Zr0ꢀ1Ti0ꢀ9O Ceramics by the Nanocrystals-Induced Method
3
We should note that these ceramic can replace PZT-based
materials, being suitable for electronic device applications.
5. J. Wu, D. Xiao, W. Wu, Q. Chen, J. Zhu, Z. Yang, and J. Wang,
Scripta Mater. 65, 771 (2011).
6. Y. Cui, C. Yuan, X. Liu, X. Zhao, and X. Shan, J. Mater. Sci.: Mater.
Electron. 24, 654 (2013).
7
. C. Duran, S. T. McKinstry, and G. L. Messing, J. Am. Ceram. Soc.
4
. CONCLUSION
83, 2203 (2000).
We investigated the effect of CT nanocrystals or CT seed
on the electrical properties of BCZT ceramics. We found
that all ceramics showed a pure perovskite phase. Highest
8
9
. Z. Li, A. Wu, and P. M. Vilarinho, Chem. Mater. 16, 717 (2004).
. S. K. Ye, J. Y. Fuh, and L. Lu, Appl. Phys. Lett. 100, 252906 (2012).
10. Y. J. Wong, J. Hassan, and M. Hashim, J. Alloy. Comp. 571, 138
(2013).
11. H. F. Kay and P. C. Bailey, Acta. Cryst. 10, 219 (1957).
density, relative density, grain size, and ꢂ values were
r
3
5
.64 g/cm , 99%, 15.69, and 4239, respectively, obtained
1
2. C. K. I. Tan, S. Shannigrahi, K. Yao, and J. Ma, J Electroceram.
5, 19 (2015).
3. R. B. Atkin and R. M. Fulrath, J. Am. Ceram. Soc. 54, 265 (1971).
for CT seed-added with x = 0.08. Tan ꢃ values were lower
3
than 0.02 for all samples. We obtained the highest values
1
−3
of d ∼477 pC/N, g ∼ 16×10 Vm/N, and k ∼ 51.18%
14. M. N. Rahaman, Ceramics Processing and Sintering, Marcel Dekker,
New York (1995), pp. 476–482.
3
3
33
t
for the sample with x = 0.10. We can conclude that the
CT seed helped to improve the electrical properties of the
BCZT ceramics.
15. A. Banerjee, A. Bandyopadhyay, and S. Bose, J. Am. Ceram. Soc.
9, 1594 (2006).
8
16. U. Intatha, S. Eitssyeam, J. Wang, and T. Tunkasiri, Curr. Appl.
Phys. 10, 21 (2010).
Acknowledgment: The authors would like to thank the
Department of Physics and Materials Science, Faculty of
Science at Chiang Mai University, the National Research
University Project under Thailand’s Office of the High
Education Commission, Science and Technology Research
Institute, Chiang Mai University and Mae Fah Luang Uni-
versity for financial support.
17. L. E. Cross, Ferroelectrics 76, 241 (1987).
18. V. R. Mudinepalli, L. Feng, W.-C. Lin, and B. S. Murty, J. Adv.
Ceram. 4, 46 (2015).
1
2
9. D. Shan, Y. Qu, and J. Song, J. Mater. Res. 22, 730 (2007).
0. J. Ma, X. Liu, M. Jiang, H. Yang, G. Chen, X. Liu, L. Qin, and
C. Luo, J. Mater. Sci: Mater. Electron. 25, 992 (2014).
21. J. H. Park, B. K. Kim, K. H. Song, and S. J. Park, J. Mater. Sci.
Mater. Electron. 6, 97 (1995).
2
2
2. K. Kumar and B. Kumar, Ceram. Int. 38, 1157 (2012).
3. C. A. Randall, N. Kim, J. P. Kucera, W. W. Cao, and T. R. Shrout,
J. Am. Ceram. Soc. 81, 677 (1998).
References and Notes
1
. D. Berlincourt and H. Jaffe, Phys. Rev. 111, 143 (1958).
24. S. Zhang, R. Xia, T. R. Shrout, G. Zang, and J. Wang, J. Appl. Phys.
100, 104108 (2006).
25. M. Demartin and D. Damjanovic, Appl. Phys. Lett. 68, 3046 (1996).
26. A. J. Moulson and J. M. Herbert, Electroceramics Materials, Prop-
erties, Applications, 2nd edn., Wiley and Sons, New York (2003).
Delivered by Ingenta to: Florida State University, College of Medicine
2. O. P. Thakur, C. Prakash, and A. R. James, J. Alloy. Comp. 470, 548
IP: 185.46.86.229 On: Sun, 04 Dec 2016 19:16:33
(2009).
Copyright: American Scientific Publishers
3. W. Liu and X. Ren, Phys. Rev. Lett. 103, 257602 (2009).
4. Z. Dai and Y. Akishige, Funct. Mater. Lett. 7, 1350074 (2014).
Received: 30 December 2015. Accepted: 29 June 2016.
J. Nanosci. Nanotechnol. 16, 12956–12961, 2016
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