143107-3
Marx et al.
Appl. Phys. Lett. 88, 143107 ͑2006͒
and the Deutscher Akademischer Austauschdienst for finan-
cial support.
1
A. H. Flood, J. F. Stoddart, D. W. Steuerman, and J. R. Heath, Science
3
06, 2055 ͑2004͒.
2
P. J. A. Sazio, J. Berg, P. See, C. J. B. Ford, P. Lundgren, N. C. Greenham,
D. S. Ginger, S. Bengtsson, and S. N. Chin, Mater. Res. Soc. Symp. Proc.
6
79, B2.3.1 ͑2001͒.
3
4
S. P. Murarka, Silicides for VLSI Applications ͑Academic, New York,
983͒.
J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science 286, 1550
1999͒.
1
5͑
M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour,
Appl. Phys. Lett. 78, 3735 ͑2001͒.
6
J. M. Tour, L. Jones, D. L. Pearson, J. J. S. Lamba, T. P. Burgin, G. M.
Whitesides, D. L. Allara, A. N. Parikh, and S. V. Atre, J. Am. Chem. Soc.
1
17, 9529 ͑1995͒.
7
8
9
K. Walzer, E. Marx, N. C. Greenham, R. J. Less, P. R. Raithby, and
K. Stokbro, J. Am. Chem. Soc. 126, 1229 ͑2003͒.
C. B. Murray, D. J. Norris, and M. G. Bawendi, J. Am. Chem. Soc. 15,
8
706 ͑1993͒.
J. E. B. Katari, V. L. Colvin, and A. P. Alivisatos, J. Phys. Chem. 98, 4109
10͑
1994͒.
FIG. 3. Individual current-voltage characteristics at 120 K for CdSe nano-
V. L. Colvin, A. N. Goldstein, and A. P. Alivisatos, J. Am. Chem. Soc.
crystals on EP2NO on nickel silicide ͑circles͒. Differential conductance is
2
114, 5221 ͑1992͒.
also shown ͑squares͒. Solid and broken lines represent scanning from posi-
11
E. Marx, D. S. Ginger, K. Walzer, K. Stokbro, and N. C. Greenham, Nano
Lett. 2, 911 ͑2002͒.
2
tive to negative and negative to positive bias, respectively.
1
M. D. Porter, T. B. Bright, D. L. Allara, and C. E. D. Chidsey,
J. Am. Chem. Soc. 109, 3559 ͑1987͒.
13
plings to torsions within the EP2NO ͑Ref. 19͒ and the effect
2
E. Marx, K. Walzer, R. J. Less, P. R. Raithby, K. Stokbro, and N. C.
Greenham, Org. Electron. 5, 315 ͑2004͒.
2
0
of charge localization in the monolayer may both play a
role in producing the observed hysteresis.
1
4
See EPAPS Document No. E-APPLAB-88-289613 for infrared and pho-
toluminescence spectra. The document may also be reached via the
p.aip.org in the directory /epaps/. See the EPAPS homepage for more
information.
P. E. Laibinis, G. M. Whitesides, D. L. Allara, Y. T. Tao, A. N. Parikh, and
R. G. Nuzzo, J. Am. Chem. Soc. 113, 7152 ͑1991͒.
K. Walzer, E. Marx, N. Greenham, and K. Stokbro, Surf. Sci. 532–535,
Our results show that nickel silicide is suitable for use as
an electrode in molecular electronic devices. Monolayers of
both aliphatic and aromatic molecules can be deposited on its
surface, and STS measurements demonstrate electrical con-
tact of the molecules to the substrate. Using CdSe nanocrys-
tals attached to the silicide substrate by aromatic monolayers
we see evidence of Coulomb blockade and resonant tunnel-
ing effects. These results demonstrate that silicidation pro-
vides a possible route for making contacts to molecular elec-
tronic devices from silicon-based circuits.
1
1
5
6
177
95 ͑2003͒.
E. P. A. M. Bakkers, Z. Hens, A. Zunger, A. Franceschetti, L. P.
Kouwenhoven, L. Gurevich, and D. Vanmaekelbergh, Nano Lett. 1, 551
͑2001͒.
1
1
8
Z. J. Donhauser, B. A. Mantooth, K. F. Kelly, L. A. Bumm, J. D. Monnell,
J. J. Stapleton, D. W. Price, A. M. Rawlett, D. L. Allara, J. M. Tour, and
P. S. Weiss, Science 292, 2303 ͑2001͒.
The authors are grateful to Dr. D. J. Paul for valuable
discussions. This project was supported by the European
Commission IST program IST-1999-10323 ͑SANEME͒, and
by the Engineering and Physical Sciences Research Council
9
J. Cornil, Y. Karzazi, and J. L. Brédas, J. Am. Chem. Soc. 124, 3516
20͑
2002͒.
F.-R. F. Fan, R. Y. Lai, J. Cornil, Y. Karzazi, J.-L. Brédas, L. Cai, L.
Cheng, Y. Yao, D. W. Price, S. M. Dirk, J. M. Tour, and A. J. Bard,
J. Am. Chem. Soc. 126, 2568 ͑2004͒.
͑EPSRC͒, UK. One of the authors ͑E.M.͒ thanks the EPSRC
his article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 75.102.71.3
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