X. Zhu et al. / Journal of Alloys and Compounds 677 (2016) 57e60
59
should be the black oxides covered on the surface.
0.00137 mUcmKꢂ2. With the electronic specific heat coefficient
g
¼ 9.1 from Ref. [15], the Kadowaki-Woods (KW) ratio A/
g
2 can be
evaluated as 1.65 ꢀ 10ꢂ5 mU cm K2 mJꢂ2, which is slightly larger
than the universal line a0 ¼ 1 ꢀ 10ꢂ5 of correlated electron systems.
This demonstrates that CrAs is a correlated electron system.
3.2. Resistivity
Fig. 2 shows the temperature dependence of b-axis resistivity
(rb) with cooling and warming processes. The curves show metallic
behavior with abrupt hysteresis transitions at T ¼ 247 K and
T ¼ 257 K for cooling and warming processes, respectively. The
3.3. Magnetization
residual resistivity ratio (RRR, here we use r(250 K)/r(5 K)) is ~9,
which is smaller than the crystal grown via tin flux method [15].
The transition temperature 247e257 K is slight smaller than
260e270 K for the crystal grown via tin flux method. For the first
cooling process, the rb increases abruptly at T ¼ 246 K with ~80%
Fig. 3 shows the temperature dependence of magnetization
(MꢂT) measured by zero-field cooling process and field-cooling
process with applied field (H) perpendicular and parallel to b-
axis, respectively. Obviously, a transition with hysteresis between
250 K and 258 K can be observed on the MꢂT curves, which is
consistent to the resistivity results. Interestingly, the AFM transi-
tion leads to the decrease of magnetization M for Hkb, while the
AFM transition leads to the increase of M for H⊥b. Below the helical
AFM transition, the magnetization decrease with decreasing tem-
perature, and then reach the minimum around 30 K for both Hkb
and H⊥b. These results are consistent with that reported on the
single crystal grown via Sn flux method [15]. The inset of Fig. 3
shows the magnetic hysteresis of CrAs single crystal measured at
2 K for both Hkb and H⊥b. The MꢂH curves show linear field
dependent relation both for Hkb and H⊥b. Generally, the magne-
tization of our sample shows similar behavior to that of the crystal
grown via tin flux method.
(Drb/rb). For the second warming process, the rb increases with
~68%, rather than return to the previous value for W. Wu et al.'s
sample [12]. It is interesting that rb of W. Wu et al.'s sample de-
creases with decreasing temperature during the transition [12],
which is different from our samples and H. Kotegawa et al.'s sam-
ples [13]. The b-axis lattice parameter expands about 4% after the
helical AFM transition [11], which leads to cracks in the crystal. The
cracks will result in the decrease of cross-section of electrical
transport, which is the origin of resistivity jump at the AFM tran-
sition. Although the RRR and transition temperature is different
from that of the tin-flux grown sample, the resistivity jump ratio
80% of our sample is significantly larger than ~35% for the crystal
grown via tin flux method [13,15]. This indicates our sample should
have larger change on cell volume. In CrAs1ꢂx Px [11], it was found
that the TN is related to the b-axis lattice parameters. The different
single crystal growth condition, growth temperature and cooling
procedure, may lead to different stress in as-grown crystal. The
slight difference on stress and b-axis lattice parameter should be
the origin of these difference mentioned above.
4. Conclusions
In summary, large single crystals of CrAs with dimensions of
~1 ꢀ 5 ꢀ 1 mm3 were successfully grown via the chemical-vapor-
transport method. The phase was identified by powder X-ray. The
electrical resistivity and magnetization were measured. The elec-
trical resistivity results indicate that CrAs grown via chemical-
vapor transport method has some different behavior from the
crystal grown via tin flux method, while magnetization results
indicate that they have similar behavior except the difference on
As shown in the inset of Fig. 2, the r
beT2 curve of CrAs shows
linear relation below T < 20 K, which can be well described as
r
¼
r0þAT2, where r0 is the residual resistivity, and A is a constant.
This indicates that CrAs has a Fermi-liquid ground state, in which
the electron-electron interactions play the major role in the scat-
tering mechanism. Since the cracks occur in the crystal below TN,
the A is not intrinsic. We can estimate the intrinsic A by a correction
factor of rb(247 K)/rb(244 K) ~0.57, since the cracks only reduce the
cross-section of the electrical transport. From the obtained fitting
ꢀ
Neel temperature.
values of
A
¼
0.00241 mUcmKꢂ2
, real A is estimated as
Fig. 3. The temperature dependence of magnetization measured by zero-field cooling
(ZFC, solid symbol) and field-cooling (FC, open symbol) process with applied field (H)
perpendicular (rectangle symbol) and parallel (circle symbol) to b-axis. The H is
1000 Oe in all measurements. The inset shows the magnetic hysteresis of CrAs single
crystal measured at 2 K for both Hkb and H⊥b.
Fig. 2. The temperature dependence of resistivity measured with cooling and warming
process, which is marked as arrows. The inset shows the T2 dependence of resistivity.
The solid line represents the linear fitting results.