Full text of DOI:10.1063/1.104136

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Growth of InGaAs structures using in situ electrochemically generated arsine
D. N. Buckley, C. W. Seabury, J. L. Valdes, G. Cadet, J. W. Mitchell, M. A. DiGiuseppe, R. C. Smith, J. R. C.
Filipe, R. B. Bylsma, U. K. Chakrabarti, and KW. Wang
Citation: Applied Physics Letters 57, 1684 (1990); doi: 10.1063/1.104136
View online: http://dx.doi.org/10.1063/1.104136
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/57/16?ver=pdfcov
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Evaluation Only. Created with Aspose.PDF. Copyright 2002-2021 Aspose Pty Ltd.
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
155.247.166.234 On: Sat, 22 Nov 2014 13:19:55

Evaluation Only. Created with Aspose.PDF. Copyright 2002-2021 Aspose Pty Ltd.
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
155.247.166.234 On: Sat, 22 Nov 2014 13:19:55

Evaluation Only. Created with Aspose.PDF. Copyright 2002-2021 Aspose Pty Ltd.
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
155.247.166.234 On: Sat, 22 Nov 2014 13:19:55