462
C. Fan et al. / Surface Science 600 (2006) 461–467
a few size-selected Ir under steady state conditions. The
The main UHV chamber has a mass spectrometer to
monitor gas composition, and a second, differentially
pumped mass spectrometer is used to monitor species
desorbing from the sample. This spectrometer views the
sample through a 3 mm aperture at the end of a skimmer
cone. We have found [18] that species desorbing from the
cluster-containing spot are detected substantially more effi-
ciently than those from the surrounding substrate area,
probably because of additional collimation from the ion-
izer geometry. One serious problem is that hydrazine
decomposes on internal surfaces of the mass spectrometer,
creating background at the product masses. To minimize
this background, the differential pumping skimmer cone,
including all wall surfaces in the vicinity of the ionizer, is
cooled to ꢀ87 K by flowing liquid nitrogen. In addition,
hydrazine cracks in the mass spectrometer ionizer yielding
ions at the masses of interest for the decomposition reac-
tion on the surface, thus it is critical to have an accurate
method for subtracting this background.
n
chemistry observed here for TPD from small Ir is quite
n
different from that seen for bulk metals and the high cover-
age model catalyst, indicating that both activity and prod-
uct branching are strongly affected by cluster size in this
system.
2
. Experimental methodology
The experiments were carried out in a UHV chamber
ꢁ
10
(
base pressure ꢀ2 · 10
Torr) that has been described
previously [11,12]. The chamber is attached to the end of
a mass-selected, ion deposition beam line that is used to de-
þ
þ
posit Irn on the sample surface. Irn is generated by laser
vaporization of a rastering Ir target, with the resulting Ir
vapor confined and cooled by a pulsed helium flow. Cat-
ions exiting the source are transported and mass-selected
by a series of quadrupole ion guides, and deposited at an
energy of 1 eV/atom through a 2 mm exposure mask posi-
tioned just in front of the sample surface. The system con-
tains facilities for in situ sample preparation, and
characterization by X-ray photoelectron spectroscopy
In this work, hydrazine was introduced through an in-
ert, pulsed inlet system [19], to minimize decomposition
of hydrazine in the inlet system. At the beginning of each
day, the liquid hydrazine sample (N H , 98.5% Alpha, or
(
XPS), Auger electron spectroscopy (AES), and ion scatter-
2
4
ing spectroscopy (ISS). The XPS measurements used an
AlKa source and XPS binding energies were calibrated
using the O and Al peaks of the Al O /NiAl substrate.
N D , 95%, C/D/N, Isotopes Inc.) was purified with sev-
2 4
eral freeze–pump–thaw cycles using both liquid nitrogen
vapor and dry ice/acetone baths to freeze N H (m.p. =
2
3
2
4
The sample substrate is a 7 · 7 mm NiAl(110) single
crystal (Surface Preparation Laboratory), spot welded to
a pair of tantalum heating wires, and suspended by tung-
sten rods from a liquid nitrogen cryostat. The sample tem-
perature can be controlled in the range from ꢀ90 K to
275 K) while maintaining substantial vapor pressure for
the NH decomposition product (b.p. = 240 K). During
3
use, the hydrazine container is kept in an ice–water bath
to maintain constant vapor pressure of ꢀ4.5 Torr [20].
Even though the inlet system is constructed entirely of
glass, teflon, and perfluoroalkoxy materials, there is still
some hydrazine decomposition. Before each sample dosing
operation, the hydrazine is additionally purified by repeat-
edly evacuating the head space of the hydrazine container
to preferentially pump away the higher vapor pressure
NH , N , and H decomposition products. With these
>
1300 K. Sample temperatures were measured by a K-type
thermocouple spot welded to the back of the NiAl(110)
crystal. The substrate for these experiments was an alumina
film grown epitaxially on the NiAl(110) crystal using a
procedure described by Kulawik et al [13]. The method
˚
has been shown to give alumina films ꢀ5 A thick, with
3
2
2
good local order and a structure similar to that of c-
precautions, the purity of the delivered hydrazine is excel-
lent [19].
Al O [14–17]. In brief, the NiAl(110) single crystal was
2
3
+
initially cleaned by repeated cycles of Ar bombardment
and 1270 K annealing. Before each experiment, the NiAl
crystal was Ar sputtered to remove deposited Ir, then an-
3. Results and discussion
+
nealed to 1270 K for 5 min in UHV. The Al O film was
Before analyzing the decomposition of hydrazine on Irn/
alumina, it is useful to review the TPD behavior of hydra-
zine from an inert surface. The inset to Fig. 1 shows a series
of hydrazine TPD spectra from a clean (Ir-free) alumina/
NiAl(110) surface. For unit sticking probability, ꢀ1.8 L
exposure results in deposition of a monolayer [11]. The first
monolayer desorbs in a broad peak around 181 K. For
coverages between 1 and ꢀ3 ML, the monolayer desorp-
tion peak is preceded by a sharp peak (153 K) assigned
to desorption of multilayer (i.e., mostly 2nd layer) hydra-
zine. For thicker films, a third peak at 166 K appears, be-
tween the multilayer and monolayer peaks. The smooth
0th order desorption behavior expected for evaporation
of a structureless multilayer film is observed only for thick
films (>10 ML). The origin of the 166 K desorption feature
2
3
grown by exposure to 1200 L of O at a sample tempera-
2
ture of 550 K, followed by annealing at 1070 K for 5 min.
To insure that there were no open patches in the Al O
2
3
layer, the oxidation treatment was repeated. The as-pre-
pared Al O thin film was characterized with XPS and
2
3
ISS, the latter showing that the film is continuous, with
no exposed Ni atoms. (To avoid sputter damage, the ISS
analysis was not done on samples used in the deposition
þ
experiments.) After the Al O thin film was prepared, Ir
2
3
n
clusters were deposited on the thin film at room tempera-
ture, to a density equivalent to 10% of a close packed Ir
1
4
2
monolayer (1.6 · 10 atoms/cm ). The sample was then
cooled to 100 K for dosing hydrazine prior to study by
temperature-programmed desorption.