Temperature Dependence of the Reaction of SiH2 with D2

Article abstract of DOI:10.1021/j100325a006

A laser flash photolysis/laser absorption technique has been used to generate and monitor SiH2 radicals in real time.We present preliminary results of a study of the rate of removal of SiH2 radicals in the presence of D2 in the temperature interval 268 - 330 K The removal rate coefficient is found to be temperature independent in this range with a value (1.88 +/- 0.17) * 10¹² cm³ molecule^-1 s^-1.The implications of this result for the temperature dependence of the reaction SiH2 with H2 are discussed.