Journal of Physical Chemistry p. 4025 - 4027 (1988)
Update date:2022-08-16
Topics:
Baggott, J. E.
Frey, H. M.
King, K. D.
Lightfoot, P. D.
Walsh, R.
Watts, I. M.
A laser flash photolysis/laser absorption technique has been used to generate and monitor SiH2 radicals in real time.We present preliminary results of a study of the rate of removal of SiH2 radicals in the presence of D2 in the temperature interval 268 - 330 K The removal rate coefficient is found to be temperature independent in this range with a value (1.88 +/- 0.17) * 1012 cm3 molecule-1 s-1.The implications of this result for the temperature dependence of the reaction SiH2 with H2 are discussed.
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