Silicon

Base Information

• Chemical Name: Silicon
• CAS No.: 7440-21-3
• Molecular Formula: Si
• Molecular Weight: 32.1173
• Hs Code.: 3822 00 00
• Wikidata: Q27113880
• Mol file: 7440-21-3.mol

Synonyms:silicon metal;4FY;Aldrich 267414-25G;Biosilicon;CZ-N Polished wafer;FEB 450D;GKO 3516A;HGH600;Hexsil;JT 02;KDB 0.1;KDB 0.5;KDB 10;KDB 20;KR 1;Metasilicon 325A;PHC20;Polysilicon;SI 1059;SILSO;Sharp 80W;Si(100) wafer;Sicomill 4C-P;Sicomill Grade 2;Silgrain;Silgrain HQ;Silgrain Standard;Silicon 100;Silicon element;Polyeristalline silicon powder;

Chemical Property of Silicon

Chemical Property:

• Appearance/Colour: grey lustrous solid or grey powder
• Vapor Pressure: 54300mmHg at 25°C
• Melting Point: 1410 °C
• Boiling Point: 2355 °C
• PSA: 0.00000
• Density: 2.33 g/cm³
• LogP: 0.00000
• Storage Temp.: Flammables area
• Sensitive.: Air Sensitive
• Water Solubility.: INSOLUBLE
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 27.976926534
• Heavy Atom Count: 1
• Complexity: 0

Purity/Quality:

99% ^*data from raw suppliers

SiliconPowder,150μm ^*data from reagent suppliers

Safty Information:

• Pictogram(s): F,T
• Hazard Codes: T,F
• Statements: 11
• Safety Statements: 26-36/37-45-7/9-33-16-36

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Canonical SMILES: [Si+4]
• Description: Gay Lussac and Thenard in 1809 obtained very impure amorphous silicon by passing silicon tetrafluoride over heated potassium. Berzelius in 1823 prepared elemental silicon in high purity by the same method. He also obtained silicon by heating potassium fluosilicate with potassium metal. Deville produced crystalline silicon in 1854 by electrolysis of a molten mixture of impure sodium aluminum chloride containing 10% silicon and a small quantity of aluminum. Silicon is the second most abundant element on earth after oxygen. It occurs in nature combined with oxygen in various forms of silica and silicates. Silicates have complex structures consisting of SiO4 tetrahedral structural units incorporated to a number of metals. About 90% of the earth’s crust is made up of silica and naturally-occurring silicates. Silicon is never found in nature in free elemental form. Among all elements silicon forms the third largest number of compounds after hydrogen and carbon. There are well over 1,000 natural silicates including clay, mica, feldspar, granite, asbestos, and hornblende. Such natural silicates have structural units containing orthosilicates, SiO44– , pyrosilicates Si2O76– and other complex structural units, such as, (SiO3)n2n– that have hexagonal rings arranged in chains or pyroxenes (SiO32– )n and amphiboles, (Si4O116– )n in infinite chains. Such natural silicates include common minerals such as tremolite, Ca2Mg5(OH)2Si8O22; diopside, CaMg(SiO3)2; kaolin, H8Al4Si4O18; montmorillonite, H2Al2Si4O12; talc, Mg3[(OH)2 SiO10]; muscovite ( a colorless form of mica), H2KAl3(SiO4)3; hemimorphite, Zn4(OH)2Si2O7?H2O; beryl, Be3Al2Si6O18; zircon, ZrSiO4; benitoite, BaTiSi3O9; feldspars, KAlSi3O8; zeolites, Na2O?2Al2O3?5SiO2?5H2O; nephrite, Ca(Mg,Fe)3(SiO3)4; enstatite, (MgSiO3)n; serpentine, H4Mg3Si2O9; jadeite, NaAl(SiO3)2; topaz, Al2SiO4F2; and tourmaline, (H,Li,K,Na)9 Al3(BOH)2Si4O19. Many precious gemstones are silicate based. Such gems include beryl, emerald, aquamarine, morganite, topaz, tourmaline, zircon, amazon stone and moonstone.
• Uses: Elemental silicon has some of the most important applications in this electronic age. One of the major applications is in computer chips. The single crystals of crystalline silicon are used for solid-state or semiconductor devices. Silicon of hyperpurity, doped with trace elements, such as boron, phosphorus, arsenic, and gallium is one of the best semiconductors. They are used in transistors, power rectifiers, diodes and solar cells. Silicon rectifiers are most efficient in converting a-c to d-c electricity. Hydrogenated amorphous silicon converts solar energy into electricity. Silicon is usually available as electronic-grade, high-quality, high-purity single crystalline material in the form of wafers (round, surface-polished slices typically of 4–12 inches in diameter and a few hundreds of micrometers to millimeters in thickness). The biggest advantage of using silicon for microfluidic applications is the availability of a mature processing technology inherited from the microelectronics IC industry as well as the possibility of defining very small structures that can be cointegrated with the electronics on the same chip. Some of the disadvantages of using silicon as a structural material are linked to the polar nature of the silicon crystal resulting in undesirable adsorption of molecules in microfluidic systems. Furthermore, the higher cost of silicon as substrate material without any specific advantages from microfluidic systems standpoint makes it less attractive as a substrate material unless integration of on-chip electronic circuits is a strong requirement for the particular microsystem design. The typical cost of an average quality silicon substrate is about 0.25 U.S. cents/cm2. In making silanes and silicones, the Si-C bond being about as strong as a C-C bond. In the manufacture of transistors, silicon diodes and similar semiconductors. For making alloys such as ferrosilicon, silicon bronze, silicon copper. As a reducing agent like aluminum in high tempereture reactions. silicone (volatile) is used in face creams to increase the product’s protection capabilities against water evaporation from the skin. Silicone polyethers are mainly used in water-based skin care formulations and give improved softness, gloss, and feel. Silicones have been used in cosmetics for more than 30 years. They are minerals able to repel water. Silicones present formulation problems because of poor compatibility with cosmetic oils and emollients. Silicones are not irritating. Silicon’s tetravalent pyramid crystalline structure, similar to tetravalent carbon, results ina great variety of compounds with many practical uses. Crystals of silicon that have beencontaminated with impurities (arsenic or boron) are used as semiconductors in the computerand electronics industries. Silicon semiconductors made possible the invention of transistorsat the Bell Labs in 1947. Transistors use layers of crystals that regulate the flow of electric current.Over the past half-century, transistors have replaced the vacuum tubes in radios, TVs,and other electronic equipment that reduces both the devices’ size and the heat produced bythe electronic devices.Silicon can be used to make solar cells to provide electricity for light-activated calculatorsand satellites. It also has the ability to convert sunlight into electricity.When mixed with sodium carbonate (soda ash) and calcium carbonate (powdered limestone)and heated until the mixture melts, silica (sand) forms glass when cooled. Glass ofall types has near limitless uses. One example is Pyrex, which is a special heat-resistant glassthat is manufactured by adding boron oxide to the standard mixture of silica, soda ash, andlimestone. Special glass used to make eyewear adds potassium oxide to the above standardmixture.Silicon is also useful as an alloy when mixed with iron, steel, copper, aluminum, andbronze. When combined with steel, it makes excellent springs for all types of uses, includingautomobiles.When silicon is mixed with some organic compounds, long molecular chains known assilicone polymers are formed. By altering the types of organic substances to these long siliconepolymer molecules, a great variety of substances can be manufactured with varied physicalproperties. Silicones are produced in liquid, semisolid, and solid forms. Silicones may berubbery, elastic, slippery, soft, hard, or gel-like. Silicone in its various forms has many commercialand industrial uses. Some examples are surgical/reconstructive implants, toys, SillyPutty, lubricants, coatings, water repellents for clothing, adhesives, cosmetics, waxes, sealants,and electrical insulation.
• Physical properties: Silicon does not occur free in nature, but is found in most rocks, sand, and clay. Siliconis electropositive, so it acts like a metalloid or semiconductor. In some ways silicon resemblesmetals as well as nonmetals. In some special compounds called polymers, silicon will act inconjunction with oxygen. In these special cases it is acting like a nonmetal. There are two allotropes of silicon. One is a powdery brown amorphous substance bestknown as sand (silicon dioxide). The other allotrope is crystalline with a metallic grayishluster best known as a semiconductor in the electronics industry. Individual crystals of siliconare grown through a method known as the Czochralski process. The crystallized siliconis enhanced by “doping” the crystals (adding some impurities) with other elements such asboron, gallium, germanium, phosphorus, or arsenic, making them particularly useful in themanufacture of solid-state microchips in electronic devices. The melting point of silicon is 1,420°C, its boiling point is 3,265°C, and its density is2.33 g/cm3.

Technology Process of Silicon

There total 513 articles about Silicon which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

dibromochlorosilane (82146-27-8) + trimethylstannane (1631-73-8) → tribromosilane (7789-57-3) + SiClBrH2 (21479-75-4) + SiCl2HBr (82146-25-6) + trichlorosilane (10025-78-2) + monosilane (7440-21-3)

Guidance literature:

In neat (no solvent); condensing of equimolar amts. of tinhydride and SiClHBr2 (trace of SiCl2HBr present) into cold finger, reaction at room temp. (30 min); further products; not isolated; IR spectroscopy;

Reference yield:

tetrachlorosilane (10026-04-7,53609-55-5) + trimethylstannane (1631-73-8) → trichlorosilane (10025-78-2) + trimethyltin(IV)chloride (1066-45-1) + monosilane (7440-21-3) + Dichlorosilane (4109-96-0)

Guidance literature:

In neat (no solvent); inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 36 h; not isolated; IR spectroscopy (identified 25-30% SiCl3H, 15% SiCl2H2 and 10% SiH4 in product mixt.);

Reference yield:

trimethylstannane (1631-73-8) + bromo trichloro silane (13465-74-2) → tetrachlorosilane (10026-04-7,53609-55-5) + trichlorosilane (10025-78-2) + monosilane (7440-21-3)

Guidance literature:

In neat (no solvent); inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 3 h; not isolated; IR spectroscopy (identified 85% SiCl3H, 5% SiH4 and 5% SiCl4 in product mixt.);

upstream raw materials:

sodiumtris(benzene-1,2 diolato)silicate

strontium silicide

water

SiF₂HBr

Downstream raw materials:

dimethylsilicon dichloride

Methyltrichlorosilane

trimethoxysilane

tetramethylorthosilicate

Refernces

• 1、 Ahn, Jin Hyung,Ahn, Byung Tae. "Crystallization of Amorphous Silicon Thin Films Using a Viscous Nickel Solution". . p. H115-H119. Retrieved 2001.
• 2、 Ryu, Myung-Kwan,Hwang, Seok-Min,Kim, Tae-Hoon,Kim, Ki-Bum,Min, Seok-Hong. "The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2". . p. 3063 - 3065. Retrieved 1997.
• 3、 Tanwar, Swati,Sharma, Bhagwati,Kaur, Vishaldeep,Sen, Tapasi. "White light emission from a mixture of silicon quantum dots and gold nanoclusters and its utilities in sensing of mercury(ii) ions and thiol containing amino acid". . p. 15997 - 16006. Retrieved 2019.
• 4、 Klimov,Schwarz,McBranch,White. "Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study". . p. 2603 - 2605. Retrieved 1998.
• 5、 Masuda, Takashi,Sotani, Naoya,Hamada, Hiroki,Matsuki, Yasuo,Shimoda, Tatsuya. "Fabrication of solution-processed hydrogenated amorphous silicon single-junction solar cells". . . Retrieved 2012.
• 6、 Chiang,Gates,Lee, Szetsen S.,Kong,Bent, Stacey F.. "Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films". . p. 9537 - 9547. Retrieved 1997.
• 7、 Reuter, B.,Knoll, H.. "". . p. 372 - 372. Retrieved 1947.
• 8、 Nowotny, H.,Lux, B.,Kudielka, H.. "". . . Retrieved 1956.
• 9、 Hu,Zhao,Basa,Gao,Irene. "Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor deposition". . p. 485 - 487. Retrieved 1996.
• 10、 Hu, Y. Z.,Diehl, D. J.,Liu, Q.,Zhao, C. Y.,Irene, E. A.. "". . p. 700 - 702. Retrieved 1995.