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Qu et al.
in the size range of 10-80 nm. As the temperature approaches
the melting point, nanoparticles may not take the form of molten
spheres to produce straight nanowires (symmetric with respect
to the growth axis). Instead, the inhomogeneity in these
nanoparticles at near melting point results in anisotropic growth,
which makes the nanowires coil. As a result, nanowires
produced at near melting point are more coiled, and those
produced at a higher temperature at which the nanoparticle
catalysts are totally molten are straight. For smaller nanopar-
ticles, the melting temperatures are more likely lower than 1035
As mentioned before, the nanoparticles observed at the tips
of these short nanowires were most likely not the same as those
originally deposited on the Si wafer, because those nanoparticles
might migrate, sinter, and break up on the surface en route to
high-temperature growth conditions. Future work is needed to
study the synthesis and anchoring of uniformly sized nanopar-
ticle catalysts to guarantee controlled growth of only SiNCs.
The growth mechanisms will have to be studied with in situ
methods such as in situ TEM or X-ray absorption spectroscopy
because the structures of nanoparticles and SiNCs at the growth
3
3,34
°C, due to a larger quantum effect, and hence they only catalyze
temperature are needed.
the growth of straight nanowires. However, one cannot rule out
the possibility of impurities in those small nanoparticles, which
may result in an increased melting temperature. This may
explain why some SiNCs were made of small diameter
nanowires. Other possibilities include the contact angle anisot-
ropy (CAA), which may control the growth even when the
nanoparticles are molten.31
The coiled and straight hybrid silicon-based nanowires with
varying pitches can be used as composite nanomaterials or
templates for making other nanomaterials. SiNCs of different
tensile strengths can be used in nanoscale mechanical, photonic,
and electronic devices. Furthermore, functionalized small coil
diameter SiNCs may be developed to mimic the function of
biological macromolecules.
The improvement of type B Co nanoparticle over type A in
catalyzing the growth of SiNCs may be understood as follows.
When type A nanoparticles were used, many of them had to
undergo coalescence to form larger nanoparticles in order to
make SiNCs at ∼1050 °C because of the requirement for
anisotropy at near melting temperature. Coalescence could
happen when the substrate temperature was raised above 500
Acknowledgment. This work is partially supported by NSF
CAREER award (CHE0135132) and University of California
Campus-Laboratory Exchange grants. We thank the National
Center for Electron Microscopy (NCEM) for their support of
this work. We thank Drs. C. Song and V. Radmilovic at NCEM
for their assistance. The NCEM is a DOE facility. We thank D.
Masiel, Dr. C. Mitterbauer, and Prof. N. Browning at UC Davis
for their assistance in TEM measurements. J.D.C. thanks Tyco
for the Tyco Electronic Fellowship for Research in Fundamental
Materials.
32
°C, as shown by an in situ TEM study. As a result, uncoalesced
small nanoparticles in the sample (having a lower melting
temperature) catalyzed the growth of small diameter straight
SiNWs at 1035 °C. Coalesced larger nanoparticles, on the other
hand, catalyzed the growth of SiNCs at 1035 °C, as shown in
Figure 2. At 1100 °C, all the nanoparticles catalyzed the growth
of straight SiNWs. For type B Co nanoparticles used in this
work, few nanoparticles were smaller than 10 nm. Therefore,
the yield of SiNCs using type B Co nanoparticles was relatively
higher.
References and Notes
(1) Iijima, S.; Ichihashi, T. Nature 1993, 364, 737.
(2) Bethune, D. S.; Kiang, C. H.; Devries, M. S.; Gorman, G.; Savoy,
R.; Vazquez, J.; Beyers, R. Nature 1993, 363, 605.
(3) Guo, T.; Nikolaev, P.; Thess, A.; Colbert, D. T.; Smalley, R. E.
Chem. Phys. Lett. 1995, 243, 49.
The results presented here also suggest that the same
nanoparticle can be responsible for the growth of straight SiNWs
and SiNCs at two different temperatures. More precisely,
nanoparticles in the size range of 20-50 nm may favor the
synthesis of SiNCs at low growth temperatures near 1050 °C.
On the other hand, smaller size nanoparticles (below 20 nm)
most likely only catalyze the growth of straight SiNWs. It is
evident that most nanoparticles would catalyze the growth of
straight nanowires at 1100 °C. As shown in Figure 6D, the
growth may be complex and influenced by the subtle changes
to nanoparticle catalysts even at the same temperature. Because
these samples were produced from regular Si wafers and were
only inspected with SEM, new samples grown on ion-milled
Si wafers may be needed for high-resolution TEM inspection
to identify the subtle structural changes that occurred to these
SiNCs.
(4) Morales, A. M.; Lieber, C. M. Science 1998, 279, 208.
(5) Wu, Y. Y.; Yan, H. Q.; Huang, M.; Messer, B.; Song, J. H.; Yang,
P. D. Chem.-A Eur. J. 2002, 8, 1261.
(6) Alivisatos, A. P. Science 1996, 271, 933.
(7) Zhang, H. F.; Wang, C. M.; Buck, E. C.; Wang, L. S. Nano Lett.
2003, 3, 577.
(8) Tang, Y.; Zhang, Y.; Wang, N.; Lee, C.; Han, X.; Bello, I.; Lee,
S. J. Appl. Phys. 1999, 85, 7981.
(9) Gao, P.; Ding, Y.; Mai, W.; Hughes, W.; Lao, C.; Wang, Z. Science
2
005, 309, 1700.
(10) Kuzuya, C.; In-Hwang, W.; Hirako, S.; Hishikawa, Y.; Motojima,
S. Chem. Vapor Depos. 2002, 8, 57.
(
(
(
11) Qin, Y.; Jiang, X.; Cui, Z. J. Phys Chem B 2005, 109, 21749.
12) Varadan, V.; Xie, J. Smart Mater. Struct. 2002, 11, 728.
13) Yang, S.; Chen, X.; Motojima, S.; Iwanaga, H. J. Nanosci.
Nanotechnol. 2004, 4, 167.
(14) Chen, X.; Zhang, S.; Dikin, D.; Ding, W.; Ruoff, R.; Pan, L.;
Nakayama, Y. Nano Lett. 2003, 3, 1299.
15) Ago, H.; Nakamura, K.; Imamura, S.; Tsuji, M. Chem. Phys. Lett.
004, 391, 308.
(
2
High-yield SiNCs are generally more difficult to make than
straight SiNWs because the growth conditions have to be tightly
controlled. If the size of the nanoparticles and growth temper-
ature and the compositions are correctly arranged, then SiNCs
can be made. As described earlier, some of these conditions
were met in the laser vaporization experiments or via the
addition of a trace amount of methane, respectively. To grow
high-yield SiNCs with controlled nanowire diameter, pitch, and
even helicity, however, control over the size of nanoparticles
and growth temperature have to be carefully exercised. For this
purpose, employing premade nanoparticles under chemical vapor
deposition or similar conditions as presented here is more
favorable.
(16) Kiang, C. H. J. Phys. Chem. A 2000, 104, 2454.
(
17) Carter, J. D.; Qu, Y.; R., P.; Hoang, L.; Masiel, D. J.; Guo, T.
Chem. Commun. 2005, 2274.
18) Carter, J. D.; Cheng, G.; Guo, T. J. Phys. Chem. B 2004, 108,
6901.
(19) Carter, J. D.; Shan, F.; Guo, T. J. Phys. Chem. B 2004, 109, 4118.
(
(20) Cheng, G.; Guo, T. J. Phys. Chem. B 2002, 106, 5833.
(21) Puntes, V. F.; Krishnan, K. M.; Alivisatos, A. P. Science 2001,
2
91, 2115.
22) Cheng, G.; Carter, J. D.; Guo, T. Chem. Phys. Lett. 2004, 400,
122.
(
(23) Wu, N.; Fu, L.; Su, M.; Aslam, M.; Wong, K.; Dravid, V. Nano
Lett. 2004, 4, 383.
(
24) Li, C.; Wang, N.; Wong, S.; Lee, C.; Lee, S. AdV. Mat. 2002, 14,
18.
(25) Sharma, S.; Sunkara, M. Nanotechnology 2004, 15, 130.
2