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Tris(dimethylsilyl)amine, also known as Me3Si3N1, is a chemical compound that consists of silicon, nitrogen, and carbon elements. It is a liquid solution belonging to the silamines category with the chemical formula (CH3)3Si3NH. Tris(dimethylsilyl)amine is characterized by its clear, colorless to light yellow appearance and hydrophobic nature. It exhibits high thermal stability and is known for its reactivity with strong acids, making it a versatile reducing agent or silylating agent in various chemical reactions. Due to its low toxicity and ready availability, Tris(dimethylsilyl)amine is widely used in analytical chemistry and organic synthesis processes. However, it is important to note that prolonged exposure to Tris(dimethylsilyl)amine can cause irritation to the skin, eyes, and respiratory tract.

21331-86-2

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21331-86-2 Usage

Uses

Used in Chemical Reactions:
Tris(dimethylsilyl)amine is used as a reducing agent or silylating agent for its reactivity with strong acids, facilitating various chemical reactions.
Used in Analytical Chemistry:
Tris(dimethylsilyl)amine is used as a solvent in analytical chemistry due to its high thermal stability and hydrophobic properties, which make it suitable for certain analytical processes.
Used in Organic Synthesis:
Tris(dimethylsilyl)amine is employed as a reagent in organic synthesis processes, where its reactivity and stability contribute to the formation of desired compounds.
Used in Research and Development:
Due to its unique properties and reactivity, Tris(dimethylsilyl)amine is used in research and development settings to explore new chemical reactions and applications in various industries.

Check Digit Verification of cas no

The CAS Registry Mumber 21331-86-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,1,3,3 and 1 respectively; the second part has 2 digits, 8 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 21331-86:
(7*2)+(6*1)+(5*3)+(4*3)+(3*1)+(2*8)+(1*6)=72
72 % 10 = 2
So 21331-86-2 is a valid CAS Registry Number.
InChI:InChI=1/C6H18NSi3/c1-8(2)7(9(3)4)10(5)6/h1-6H3

21331-86-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 15, 2017

Revision Date: Aug 15, 2017

1.Identification

1.1 GHS Product identifier

Product name TRIS(DIMETHYLSILYL)AMINE

1.2 Other means of identification

Product number -
Other names Silanamine,N,N-bis(dimethylsilyl)-1,1-dimethyl

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:21331-86-2 SDS

21331-86-2Downstream Products

21331-86-2Relevant academic research and scientific papers

NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME

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Page/Page column 80; 81; 82, (2015/07/23)

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.

Novel trisilyl amine derivative, method for manufacturing thereof and silicon-containing thin film use the same

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Paragraph 0074; 0075, (2016/12/07)

The present invention relates to a novel trisilyl amine derivative, a method for producing the same, and a thin film containing silicon produced by using the same. The trisilyl amine derivative of the present invention, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.COPYRIGHT KIPO 2015

REACTIONS OF ORGANYLHALOSILANES WITH 1,1,3,3-TETRA- AND HEXAMETHYLDISILAZANE

Basenko, S. V.,Gebel', I. A.,Toryashinova, D. D.,Vitkovskii, V. Yu.,Mirskov, R. G.,Voronkov, M. G.

, p. 1039 - 1042 (2007/10/02)

Organylchlorosilanes, and also SiCl4, decompose 1,1,3,3-tetra- and hexamethyldisilazanes with formation of hitherto unknown organylchlorosilazanes of general formulas R4-nSiCln-1NHSiH(CH3)2 and R4-nSiCln-1NHSi(CH3)3 (n = 2-4) in yields of 54-98percent.The IR and mass spectra of the prepared compounds were studied.

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