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Tris(4-methylphenyl)sulfonium chloride, also known as trityl chloride, is a chemical compound with the formula (C6H4CH3)3S+Cl?. It is a white crystalline solid that is soluble in organic solvents. tris(4-methylphenyl)sulfonium chloride is widely used in organic synthesis, particularly as a phase-transfer catalyst and a reagent for the preparation of other sulfonium salts. Trityl chloride is also employed in the protection of alcohols and amines, as well as in the synthesis of various pharmaceuticals and agrochemicals. Its stability, reactivity, and ease of handling make it a valuable tool in the field of chemistry.

22417-22-7

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22417-22-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 22417-22-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,2,4,1 and 7 respectively; the second part has 2 digits, 2 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 22417-22:
(7*2)+(6*2)+(5*4)+(4*1)+(3*7)+(2*2)+(1*2)=77
77 % 10 = 7
So 22417-22-7 is a valid CAS Registry Number.

22417-22-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name Sulfonium, tri-p-tolyl-, chloride

1.2 Other means of identification

Product number -
Other names Tri-p-tolyl-sulfonium,Chlorid

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:22417-22-7 SDS

22417-22-7Relevant academic research and scientific papers

NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME

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Paragraph 0345; 0346; 0351; 0352, (2017/01/02)

There is disclosed a sulfonate shown by the following general formula (2). R1—COOC(CF3)2—CH2SO3?M+??(2) (In the formula, R1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M+ represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.

PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS

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, (2011/01/12)

The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.

POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

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, (2010/04/23)

A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

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, (2010/05/13)

A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS

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, (2010/06/19)

A sulfonium salt has formula (1) wherein R1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R2, R3, and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.

NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME

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, (2010/08/22)

There is disclosed a sulfonate shown by the following general formula (2). [in-line-formulae]R1—COOC(CF3)2—CH2SO3?M+??(2)[/in-line-formulae] (In the formula, R1 repres

NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS

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, (2009/10/06)

Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. [in-line-formulae]ROC(═O)R1—COOCH2CF2SO3?H+??(1a)[/in-line-formulae] RO is OH or C1-C20 organoxy, R1 is a divalent C1-C20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

Thermal acid generator, resist undercoat material and patterning process

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, (2009/04/24)

A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3?(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

Sulfonium salt-containing polymer, resist composition, and patterning process

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, (2009/11/30)

A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N = 0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a = 0-3, b = 1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS

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, (2009/12/02)

Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation. [in-line-formulae]R1—COOCH2CF2SO3?H+??(1a)[/in-line-formulae] [in-line-formulae]R1—O—COOCH2CF2SO3?H+??(1b)[/in-line-formulae] R1 is a monovalent C20-C50 hydrocarbon group of steroid structure which may contain a heteroatom. The bulky steroid structure ensures adequate control of acid diffusion. The photoacid generators are compatible with resins and suited for use in chemically amplified resist compositions.

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