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25152-52-7

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25152-52-7 Usage

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In semiconductor technology

Check Digit Verification of cas no

The CAS Registry Mumber 25152-52-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,5,1,5 and 2 respectively; the second part has 2 digits, 5 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 25152-52:
(7*2)+(6*5)+(5*1)+(4*5)+(3*2)+(2*5)+(1*2)=87
87 % 10 = 7
So 25152-52-7 is a valid CAS Registry Number.
InChI:InChI=1/Al.Sb/q+3;-3

25152-52-7 Well-known Company Product Price

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  • Alfa Aesar

  • (43455)  Aluminum antimonide, 99.99% (metals basis)   

  • 25152-52-7

  • 5g

  • 1202.0CNY

  • Detail
  • Alfa Aesar

  • (43455)  Aluminum antimonide, 99.99% (metals basis)   

  • 25152-52-7

  • 25g

  • 5012.0CNY

  • Detail

25152-52-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 13, 2017

Revision Date: Aug 13, 2017

1.Identification

1.1 GHS Product identifier

Product name ALUMINUM ANTIMONIDE

1.2 Other means of identification

Product number -
Other names Aluminum antimonide,99. (metals basis)

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:25152-52-7 SDS

25152-52-7Downstream Products

25152-52-7Relevant academic research and scientific papers

Surface chemistry of intermetallic AlSb-anodes for Li-ion batteries

Stjerndahl,Bryngelsson,Gustafsson,Vaughey,Thackeray,Edstr?m

, p. 4947 - 4955 (2007)

The solid electrolyte interphase (SEI) layer on AlSb electrodes has been studied in Li/AlSb cells containing a LiPF6 EC/DEC electrolyte using X-ray photoelectron spectroscopy (XPS). Data were collected before SEI-formation, during formation, and after formation at 0.01 V versus Li0/Li+, and at full delithiation in cycled cells at 1.20 V. The thickness of the SEI layer increases during lithiation and decreases during delithiation. This dynamic behaviour occurs continuously on cycling the cells. The growth of the SEI layer can be attributed predominantly to the deposition of carbonaceous species below 0.50 V versus Li0/Li+; these species disappear almost completely during delithiation. The extra surface-layer formation is a consequence of the additional charge that is needed to lithiate the remaining Sb component of the micrometer-sized AlSb particles at low potentials as seen by synchrotron-based X-ray diffraction. Aluminium is not reactive to lithium alloying in this electrolyte. Relatively small amounts of LiF were detected in the AlSb SEI layers compared to that commonly found in the SEI layers on graphite electrodes.

Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

Trichês,Souza,Poffo,De Lima,Grandi,De Biasi

, p. 762 - 767 (2010)

High-purity elemental Al and Sb powders were blended with equiatomic composition and submitted to mechanical alloying. For all milling times, the milled powders showed a mixture of AlSb and elemental Sb. The largest amount of AlSb was reached for milling times between 7 and 10 h. For milling times larger than 10 h, decomposition of AlSb was observed. The volume fractions of the crystalline and interfacial components were estimated using the X-ray diffraction pattern of a sample milled for 10 h. Photoacoustic absorption spectroscopy (PAS) was used to determine the thermal diffusivity and other heat transport parameters in the same sample. A combination of XRD and PAS data was used to estimate the thermal diffusivity of the interfacial component, which has a significant contribution to the thermal diffusivity of the sample.

Anode behaviors of aluminum antimony synthesized by mechanical alloying for lithium secondary battery

Honda,Sakaguchi,Fukuda,Esaka

, p. 647 - 656 (2003)

AlSb was synthesized as an anode active material for lithium secondary battery using mechanical alloying (MA). Electrochemical performance was examined on the electrodes of AlSb synthesized with different MA time. The first charge (lithium-insertion) capa

New criteria for the applicability of combustion synthesis: The investigation of thermodynamic and kinetic processes for binary Chemical Reactions

Tan, Xiaoming,Su, Xianli,Yan, Yonggao,Uher, Ctirad,Zhang, Qingjie,Tang, Xinfeng

supporting information, (2021/01/07)

Combustion synthesis is a novel technique that utilizes the exothermic heat of a chemical reaction to maintain the reaction and to rapidly prepare materials. But, hitherto, none of unified criterion for the validation of combustion synthesis has been proposed. Herein, we proposed the conditions need to be met. In terms of kinetics, at the adiabatic temperature (Tad), the diffusion distance of atoms (lTad) within 0.1 s should be larger than the particle size of the reactants(d), that is, lTad≥d. For systems that satisfy Tad/Tm,L≥1(where Tm,L is the melting point of the low-melting point component of the reactants), the presence of a liquid phase significantly increases the atomic diffusion distance from nanometers to tens of microns, making the criterion lTad≥d simplified to Tad/Tm,L≥1 in most situations. In terms of thermodynamics, the system needs to ensure that the reaction components are in an activated state, that is, Tad/Tm,H ≥0.7, where Tm,H is the melting point of the high-melting point component. The criteria for the SHS reactions proposed in this study further improve the theoretical understanding of SHS reactions, and provide guidance for exploring the ultra-fast synthesis of binary and multicomponent compounds.

Phase relations in the Al-Pr-Sb system at 773 K

Zeng, Lingmin,Liao, Jiangping,Qin, Pingli,Qin, Haiqing,Nong, Liangqin

, p. 252 - 254 (2008/10/09)

The isothermal section of the phase diagram of the Al-Pr-Sb ternary system at 773 K over the whole concentration region has been investigated mainly by powder X-ray diffraction (XRD) with the aid of scanning electron microscopy (SEM). A new ternary compound ~Al11Pr24Sb65 has been found.

Synthesis of III-V semiconductors by solid-state metathesis

Treece, Randolph E.,Macala, Gerald S.,Rao, Lin,Franke, Deanna,Eckert, Hellmut,Kaner, Richard B.

, p. 2745 - 2752 (2008/10/08)

Solid-state precursor reactions have been investigated as a general synthetic route to binary III-V (13-15) compounds. The generic reaction scheme MX3 + Na3Pn → MPn + 3 NaX (M = Al, Ga, In; X = F, Cl, I; Pn = pnictogen = P, As, Sb) has been used to prepare crystalline powders of the III-V semiconductors. The reaction mixtures can be either heated in sealed tubes or ignited with a hot filament, and the byproduct salts are simply removed by washing with an appropriate solvent. The ignited reactions are self-propagating and highly exothermic, owing to the formation of 3 mol of sodium halide. Products from both types of reactions have been characterized by powder X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, and solid-state NMR. In some cases, the products of the ignited solid-state metathesis (SSM) reactions differ from those of the sustained heating reactions. These differences provide clues as to reaction pathways in the solid-state precursor reactions.

Low temperature synthesis of IIIV semiconductor compounds

Trifonova,Zheleva,Kushev

, p. 779 - 783 (2008/10/08)

Direct low temperature synthesis was used to prepare gallium and indium arsenides and antimonides. The main advantages of this method of synthesis are that the purity of the product is determined by that of the initial elements, and the vapor pressure of

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