25617-97-4 Usage
Uses
Used in Semiconductor Devices:
Gallium Nitride is used as a blue and UV light emitter for applications in semiconductor devices such as LEDs, laser diodes, lighting, displays, and data storage. Its wide band gap property allows for efficient light emission and improved performance in these devices.
Used in Electronic Devices:
GaN is used as a key component in the development of various electronic devices, including light-emitting diodes (LEDs) and field-effect transistors (FETs). Its ability to withstand high voltages and operate at high temperatures makes it an ideal choice for these applications.
Used in Spintronics-based Applications:
Gallium Nitride can also be used as a transition metal dopant for spintronics-based applications, where its unique electronic properties can be leveraged to enhance the performance of spintronic devices.
Check Digit Verification of cas no
The CAS Registry Mumber 25617-97-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,5,6,1 and 7 respectively; the second part has 2 digits, 9 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 25617-97:
(7*2)+(6*5)+(5*6)+(4*1)+(3*7)+(2*9)+(1*7)=124
124 % 10 = 4
So 25617-97-4 is a valid CAS Registry Number.
InChI:InChI=1/Ga.N/q+3;-3
25617-97-4Relevant academic research and scientific papers
Li,Rothschopf,Pillai,Sohnlein,Wilson,Yang
, p. 7968 - 7974 (2001)
The adiabatic IPs and intermolecular vibrational frequencies were obtained for the weakly bound gallium-ammonia and -monomethylamine complexes. It was found that the methyl substitution for hydrogen in ammonia enhances the binding of the gallium atom and
Amidoalane, amidogallane and amidoindane, H2MNH2 (M = Al, Ga or In): A matrix study of three prototypal molecules with the potential for M-N multiple bonding
Himmel, Hans-Joerg,Downs, Anthony J.,Greene, Tim M.
, p. 871 - 872 (2007/10/03)
Photolysis of Al, Ga or In atoms (M) isolated in NH3-doped Ar matrices gives first the divalent amido derivative HMNH2 (λ = 436 nm) and then the univalent and trivalent amido derivatives MNH2 and H2MNH2 (λ = 200-800 nm); the measured and calculated properties of H2MNH2 are outlined.
