32992-96-4

Usage

Uses

Used in Atomic Layer Deposition (ALD) Industry:
BIS(ETHYLCYCLOPENTADIENYL)RUTHENIUM(II) is used as a precursor for atomic layer deposition (ALD) processes to create thin films of ruthenium (Ru) and well-aligned ruthenium dioxide (RuO2) nanorods. BIS(ETHYLCYCLOPENTADIENYL)RUTHENIUM(II)'s unique structure and properties make it an ideal candidate for ALD, a technique that allows for the precise control of film thickness and uniformity at the atomic level.
Application Reason:
The use of BIS(ETHYLCYCLOPENTADIENYL)RUTHENIUM(II) in ALD is driven by the need for high-quality, uniform, and conformal thin films and nanostructures in various applications, such as electronics, energy storage, and catalysis. The ALD process enables the formation of these structures with excellent control over their composition, morphology, and properties, making it a valuable technique for advancing the performance of various devices and systems.

InChI:InChI=1/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;

Upstream product

• 63767-78-2 ruthenium trichloride 
• 22516-13-8 5-ethylcyclopentadiene 
• 96-38-8 methylcyclopentadiene 
• 1287-13-4 bis(η⁵-cyclopentadienyl)ruthenium 
• 74-96-4 ethyl bromide 
• 1273-97-8 1,1'-diethylferrocene 
• 10049-08-8 ruthenium(III)chloride 
• 690663-53-7 chloro(ethylcyclopentadienyl)bis(triphenylphosphine)ruthenium(II) 

Downstream Products

• 7440-18-8 ruthenium 

Relevant academic research and scientific papers

Organic compound for CVD raw material and method of manufacturing metallic or metallic compound thin film using the organic compound

The present invention provides an organic compound for CVD raw material prepared by mixing a first organometallic compound and at least one second organometallic compound, said first organometallic compound having a central metal atom and at least one ligand coordinated thereto and said second organic compound having the same central metal as that of the first organometallic compound and at least one different ligand coordinated thereto from the ligand of the first organometallic compound, wherein the first and second organometallic compounds differ in decomposition behavior. In particular, a CVD raw material having both easy handling and good adhesiveness to thin film, which have not been so far sufficiently compatible with each other, can be obtained by mixing a cyclopentadienyl complex or a derivative thereof as the first organometallic compound, and a β-diketonato compound as the second organometallic compound.

DEPOSITION PROCESSES USING GROUP 8 (VIII) METALLOCENE PRECURSORS

Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=0)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=0)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C=0)Ca1Hb1Xc1; and Cp' is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1', where D1' is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=0)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=0)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C=0)Ca1Hb1Xc1. D1 and D1' are different from one another. X is a halogen atom or NO2; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1-c1; c1 is an integer between 0 and 2(a1)+1 -b1; b1 + c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2) + 1 - c2; andc2 is an integer between 0 and 2(a2) + 1 - b2. The process can be used in manufacturing or processing electronic devices.