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BIS(DIMETHYLAMINO)DIETHYLSILANE, also known as HMDS (hexamethyldisilazane), is a silicon-based compound that is widely used in various industries due to its unique properties. It is a colorless, volatile liquid with a strong ammonia-like odor and is highly flammable. BIS(DIMETHYLAMINO)DIETHYLSILANE is known for its role as a surface modifier and adhesion promoter, particularly in the semiconductor and electronics industries. Additionally, it serves as a low-temperature curing agent for silicones, a drying agent for moisture-sensitive reagents, and a protective coating in lithography processes. HMDS is also utilized as a precursor in the production of various silicon-based materials and as a reagent for the functionalization of surfaces in organic synthesis. Due to its flammability and toxicity, special precautions should be taken when handling HMDS, including using it in a well-ventilated area and wearing proper personal protective equipment.

33287-52-4

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33287-52-4 Usage

Uses

Used in Semiconductor and Electronics Industry:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a surface modifier and adhesion promoter for enhancing the performance and reliability of electronic components and devices.
Used in Silicone Production:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a low-temperature curing agent for silicones, allowing for the formation of stable and durable silicone materials at lower temperatures.
Used in Laboratory Settings:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a drying agent for moisture-sensitive reagents, ensuring the accuracy and reliability of experimental results by removing trace amounts of water.
Used in Lithography Processes:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a protective coating to shield sensitive surfaces from unwanted reactions or contamination during lithography processes.
Used in Silicon-Based Material Production:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a precursor in the synthesis of various silicon-based materials, contributing to the development of new materials with unique properties and applications.
Used in Organic Synthesis:
BIS(DIMETHYLAMINO)DIETHYLSILANE is used as a reagent for the functionalization of surfaces in organic synthesis, enabling the creation of novel compounds and improving the efficiency of chemical reactions.

Check Digit Verification of cas no

The CAS Registry Mumber 33287-52-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 3,3,2,8 and 7 respectively; the second part has 2 digits, 5 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 33287-52:
(7*3)+(6*3)+(5*2)+(4*8)+(3*7)+(2*5)+(1*2)=114
114 % 10 = 4
So 33287-52-4 is a valid CAS Registry Number.
InChI:InChI=1/C8H22N2Si/c1-7-11(8-2,9(3)4)10(5)6/h7-8H2,1-6H3

33287-52-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name N-[dimethylamino(diethyl)silyl]-N-methylmethanamine

1.2 Other means of identification

Product number -
Other names Silanediamine,1,1-diethyl-N,N,N',N'-tetramethyl

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:33287-52-4 SDS

33287-52-4Relevant academic research and scientific papers

Compounds useful as chemical precursors in chemical vapor deposition of silicon-based ceramic materials

-

, (2008/06/13)

In order to reduce the rate of coke formation during the industrial pyrolysis of hydrocarbons, the interior surface of a reactor is coated with a thin layer of a ceramic material, the layer being deposited by thermal decomposition of a non-oxygen containing silicon-nitrogen precursor in the vapor phase, tin an inert or reducing gas atmosphere in order to minimize the formation of oxide ceramics.

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