37231-03-1

Usage

InChI:InChI=1/2In.3S/rIn2S3/c3-1-5-2-4

Upstream product

• 7440-74-6 indium 
• 12030-24-9 indium(III) sulfide 
• 7704-34-9 sulfur 
• 13510-35-5 indium(III) iodide 
• 17356-08-0 thiourea 
• 7783-06-4 hydrogen sulfide 

Downstream Products

• 7704-34-9 sulfur 

Relevant academic research and scientific papers

Electrochemistry of Layered Semiconducting AIIIBVI Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)

Layered AIIIBVI chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AIIIBVI chalcogenides like InSe and GaSe are composed of X?M?M?X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at ?1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)6]3?/4? redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s?1. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest kobs0 obtained (3.7×10?3 cm s?1). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of ?10 mA cm?2. However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AIIIBVI indium monochalcogenides which would influence potential applications.

Polymorphism of in5S5Cl - X-ray and HRTEM-Investigations

In5S5Cl belongs to the group of mixed valence indium compounds with indium occurring simultaneously in three oxidation states (In5S5Cl = In+(In2) 4+21n3+5S2-Cr). It was shown in an earlier work that In5S5Cl obtained from InCl3, indium and sulfur at 550 °C, crystallises in a monoclinic structure type in contrast to the orthorhombic bromide, In5S5Br. The main difference of both structure types is an ordered mutual exchange of In+ and (In2)4+ in specific crystallographic positions. This exchange is possible due to the almost identical coordination pattern of both ions. A closer inspection of the real structure of monoclinic In 5S5Cl by High Resolution Transmission Microscopy (HRTEM) already showed the presence of small orthorhombic domains in the real structure of this compound. Now we also obtained macroscopic quantities of orthorhombic In5S5Cl by the reaction of InCl3, indium and sulfur at reaction temperatures below 500 °C (Pmn21, a = 3.907( 1 ) A, b = 9.021 (2) A, c = 14.866(3) A, Z = 2). The new polymorph is analysed by X-ray single crystal and X-ray powder diffraction and HRTEM investigations.

Indium tert-butylthiolates as single source precursors for indium sulfide thin films: is molecular design enough?

The dimeric indium thiolates tBu)>2 R = tBu (1), nBu (2), Me (3), and tBuS)MeIn(μ-StBu)>2 (4) have been synthesized and used as single source precursors for the metal-organic chemical vapor deposition (MOCVD) of In/InS and InS thin films.In the case of the atmospheric pressure film grown from either 1 or 2, deposition at temperatures between 290 and 350 deg C results in the formation of indium rich films (In: S ca 2) consisting of indium metal and orthorhombic InS, while at 400 deg C a single phase; the tetragonal high pressure phase of InS, is the only product deposited.Use of compound 3 as the precursor results in amorphous indium rich films being deposited at 300 deg C.While films grown from 3 at 400 deg C have a In:S ratio of 1, they consist of an indium rich phase and In2S3.The dependence of the film composition i.e., indium rich versus stoichiometric InS and structure (orthorhombic versus tetragonal InS) with the deposition temperature and molecular precursor is discussed with respect to the decomposition pathways available to the precursor molecules (1-3).Based on these results compound 4 was proposed to be a suitable precursor for the low temperature deposition of stoichiometric InS, indeed its solid state pyrolysis does yield InS.However, although low pressure MOCVD using 4 yields amorphous films of stoichiometry InS, upon annealing β-In2S3 is formed as the crystalline phase.The efficacy of molecular design of solid state materials is discussed.The indium thiolates were charaterized by 1H and 13C NMR spectroscopy and mass spectrometry.Analysis of the deposited films has been obtained by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM), with associated energy dispersive X-ray analysis (EDX).

Indium and tellurium doping of CdS crystals in cadmium vapor and their luminescent properties

A technique is devised for vapor-phase doping of CdS in the quaternary system Cd-In-Te-S. CdS crystals are doped with In and Te via four-zone annealing in Cd and InTe vapors. The luminescence spectra of the CdS〈In,Te〉[Cd] crystals (where [Cd] indicates annealing in cadmium vapor) are found to contain orange and red emission bands, in contrast to those of CdS[Cd] crystals, which are dominated by green emission. The CdS〈In,Te〉[Cd] crystals are shown to be photosensitive. Sphalerite (metastable) CdS crystals doped with In and Te are prepared under far-from-equilibrium conditions. The bands in their luminescence spectra are shifted to longer wavelengths as compared to stable CdS〈In,Te〉[Cd] crystals.

Low-temperature photoluminescence spectra of InS single crystals

Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions from the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals.

Anisotropic electrical and dispersive optical parameters in InS layered crystals

The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range hopping above and below 100 K, respectively. At high temperatures (T > 100 K) the conductivity anisotropy, s, decreased sharply with decreasing temperature following the law s ∝ exp (- Es / k T). The anisotropy activation energy, Es, was found to be 330 and 17 meV above and below 220 K, respectively. Below 100 K, the conductivity anisotropy is invariant with temperature. In that region, the calculated hopping parameters are altered significantly by the conductivity anisotropy. The optical reflectivity analysis in the wavelength range 250-650 nm revealed a clear anisotropy effect on the dispersive optical parameters. In particular, the static refractive index, static dielectric constant, lattice dielectric constant, dispersion energy and oscillator energy exhibited values of 2.89, 8.39, 19.7, 30.02 eV and 4.06 eV, and values of 2.76, 7.64, 25.9, 22.26 eV and 3.35 eV for light polarized along the a-axis and the b-axis, respectively.

Temperature dependence of the Raman-active phonon frequencies in indium sulfide

The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the Ag intralayer optical modes show that Raman frequency shift results

Phase composition and microstructure of In3S4 and CuInS2 films grown on silicon by spray pyrolysis

We describe the microstructure and phase composition of In 3S4 and CuInS2 films grown on silicon by spray pyrolysis using aerosols of thiourea complexes and examine the effects of the deposition temperature and the nature