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12030-24-9 Usage

General Description

Different sources of media describe the General Description of 12030-24-9 differently. You can refer to the following data:
1. Indium sulfide (In2S3) is an orange-red to red colored powder with the sulfuric odor that is characteristic to all sulfides. It is insoluble in water and most organic solvents but decomposes in common mineral acids, releasing hydrogen sulfide gas. Indium sulfide is primarily used as a buffer layer in copper-indium-gallium-diselenide (CIGS) photovoltaic solar cells, where it replaces the toxic material cadmium sulfide. Indium sulfide is available in 4N and 5N degrees of purity, and as a powder or compressed pellets.
2. Indium sulfide is a mid band gap semiconductor.

Chemical Properties

-200 mesh with 99.999% purity; orange powder(s); preparation is by heating In and S or by precipitating with H2S from weakly acidic solutions [KIR81] [STR93] [CER91]

Uses

Indium(III) sulfide emerged as a promising low-hazard buffer material and is used to improve the properties of solar cells and also replaces the hazardous CdS. It is a mid band gap semiconductor.

Check Digit Verification of cas no

The CAS Registry Mumber 12030-24-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 0 respectively; the second part has 2 digits, 2 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 12030-24:
(7*1)+(6*2)+(5*0)+(4*3)+(3*0)+(2*2)+(1*4)=39
39 % 10 = 9
So 12030-24-9 is a valid CAS Registry Number.
InChI:InChI=1/2In.3S/rIn2S3/c3-1-5-2-4

12030-24-9 Well-known Company Product Price

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  • Alfa Aesar

  • (44835)  Indium(III) sulfide, 99.98% (metals basis)   

  • 12030-24-9

  • 2g

  • 363.0CNY

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  • Alfa Aesar

  • (44835)  Indium(III) sulfide, 99.98% (metals basis)   

  • 12030-24-9

  • 10g

  • 1366.0CNY

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  • Alfa Aesar

  • (44835)  Indium(III) sulfide, 99.98% (metals basis)   

  • 12030-24-9

  • 50g

  • 5584.0CNY

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  • Alfa Aesar

  • (44836)  Indium(III) sulfide, 99.995% (metals basis)   

  • 12030-24-9

  • 2g

  • 452.0CNY

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  • Alfa Aesar

  • (44836)  Indium(III) sulfide, 99.995% (metals basis)   

  • 12030-24-9

  • 10g

  • 2223.0CNY

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  • Alfa Aesar

  • (44836)  Indium(III) sulfide, 99.995% (metals basis)   

  • 12030-24-9

  • 50g

  • 7260.0CNY

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  • Alfa Aesar

  • (45563)  Indium(III) sulfide, 99.999% (metals basis)   

  • 12030-24-9

  • 2g

  • 476.0CNY

  • Detail
  • Alfa Aesar

  • (45563)  Indium(III) sulfide, 99.999% (metals basis)   

  • 12030-24-9

  • 10g

  • 2223.0CNY

  • Detail
  • Alfa Aesar

  • (45563)  Indium(III) sulfide, 99.999% (metals basis)   

  • 12030-24-9

  • 50g

  • 10033.0CNY

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  • Aldrich

  • (308293)  Indium(III)sulfidered  99.99% trace metals basis

  • 12030-24-9

  • 308293-10G

  • 3,377.79CNY

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12030-24-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name INDIUM(III) SULFIDE

1.2 Other means of identification

Product number -
Other names INDIUM DIISOPROPYLDITHIOCARBAMATE

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

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Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12030-24-9 SDS

12030-24-9Relevant articles and documents

Synthesis and characterization of In2S3 nanoparticles

Cao, Guangxiu,Zhao, Yanbao,Wu, Zhishen

, p. 325 - 327 (2009)

In this paper, we report a novel solution route to prepare In2S3 nanoparticles through directly dispersing melted indium in a sulfur-dissolved solvent. X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and electr

The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films

Kundak?, Mutlu

, p. 2953 - 2961 (2011)

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C

A novel noble-metal-free binary and ternary In2S3 photocatalyst with WC and “W-Mo auxiliary pairs” for highly-efficient visible-light hydrogen evolution

Ma, Xiaohui,Li, Wenjun,Ren, Chaojun,Li, Hongda,Liu, Xintong,Li, Xinyang,Wang, Tianyu,Dong, Mei,Liu, Shujing,Chen, Shaowei

, (2021)

Herein, noble-metal-free In2S3-WC and In2S3-based photocatalysts with dual cocatalysts of flower-like MoS2 and bulk WC were synthesized through a facile solvothermal reaction. Electrochemical results indicated WC increased the interface conductance of photocatalyst and boosted the transference of photogenerated carriers. The optimal In2S3-WC show a hydrogen production rate of 128.11 μmol·h?1·g?1, which is around 6 times higher than In2S3-1%Pt (20.73 μmol·h?1·g?1). The above results demonstrate commercial WC has a crucial impact of replacing precious metal and separating carriers. Morphology characterization exhibited hydrangea In2S3 and flower-like MoS2 were attached to bulk WC. Gratifyingly, photocurrent, impedance and photoluminescence results demonstrated MoS2 further effectively separated the photogenerated carriers. Remarkably, the higher hydrogen generation rate of 390.52 μmol·h?1·g?1 obtained by the optimal ternary In2S3-WC-MoS2 composite was around 3 and 18 times higher than the optimal In2S3-WC and In2S3-1% Pt. The photocatalytic results demonstrated that “W-Mo auxiliary pairs” was a great efficient synergistic cocatalyst for In2S3 to increase active sites and improve e--h+ pairs separation for H2 generation. Furthermore, a probable reaction mechanism of the enhanced photocatalytic H2 generation was also proposed. This presented research provides an effective concept to design novel and efficient noble-metal-free photocatalyst with “W-Mo auxiliary pairs” for prominent H2 generation activity.

Novel method for the preparation of inorganic sulfides and selenides. I. Binary materials and group II-VI phosphors

Davies, Dominic A.,Vecht, Aron,Silver, Jack,Marsh, Paul J.,Rose, John A.

, p. 765 - 771 (2000)

A novel method for the synthesis of a wide range of metal sulfides and selenides is described. Polysulfide solutions formed by the dissolution of sulfur in hydrazine monohydrate have been shown to contain the hexasulfide and tetrasulfide anions. The actio

Spray pyrolysed In2S3 thin films: A potential electron selective layer for large area inverted bulk-heterojunction polymer solar cells

Menon, M. R. Rajesh,Maheshkumar,Sreekumar,Kartha, C. Sudha,Vijayakumar

, p. 199 - 203 (2012)

In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In 2S3 electron selective layer (active area of 3.25×3.25cm2) was also fabricated and tested under indoor and outdoor conditions. From the indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an open-circuit voltage of 0.41 V and a short-circuit current of 5.6 mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46 V and a short-circuit current of 9.37 mA. Copyright

Study of the Ternary System Sn-In-S. Differential Thermal and Radiocrystallographic Analyses of Pseudobinary SnS-In2S3. Vapor Phase Growth and Characterization of Mixed-Valence Tin Compounds.

Adenis,Olivier-Fourcade,Jumas,Philippot

, p. 251 - 259 (1986)

The Sn-In-S ternary system has been studied using two different methods of crystal synthesis. By direct combination of the two sulfides (SnS and In//2S//3) various melts have been prepared, and the ternary phase diagram determined by differential thermal

Structural, textural and photocatalytic properties of quantum-sized In2S3-sensitized Ti-MCM-41 prepared by ion-exchange and sulfidation methods

Shen, Shaohua,Guo, Liejin

, p. 2629 - 2635 (2006)

In2S3 nanocrystallites were successfully encapsulated into the mesopores of Ti-MCM-41 by a two-step method involving ion-exchange and sulfidation. The X-ray diffraction (XRD) patterns, UV-vis absorption spectra (UV-Vis), high-resolution transmission electron microscopy (HRTEM) and N2 adsorption-desorption isotherms were used to characterize the structure of the composite materials. It is found that the diameter of most In2S3 nanocrystallites is about 2.5 nm, less than the pore size of Ti-MCM-41. The In2S3 nanocrystallites inside the Ti-MCM-41 host show a significant blue-shift in the UV-vis absorption spectra. Under irradiation of visible light (λ > 430 nm), the composite material has much higher photocatalytic activity for hydrogen evolution than bulk In2S3. It can be explained by the effective charge-separation in the quantum-sized In2S3-sensitized Ti-MCM-41.

Deposition of Group 6A-derived inorganic semiconductor films as studied by quartz crystal microgravimetry

Myung,Kim,Lincot,Lepiller,De Tacconi,Rajeshwar

, p. 3749 - 3756 (2000)

This paper focuses on the use of QCM for the study of semiconductor film deposition processes. Specifically the electrosynthesis of metal chalcogenides (In2S3, CdS, and CdTe) is considered. A brief background is first given for electrodeposition as a process candidate for semiconductor film preparation. Previous studies are reviewed on the use of QCM (and specifically EQCM) in this area. New combined voltammetry-EQCM data are presented for the oxidative deposition of sulfur on polycrystalline Au surfaces from alkaline sulfide baths. The anodic growth of CdS films and the cathodic electrosynthesis of In2S3 are studied by the combined approach. Finally, data are presented on the cathodic electrosynthesis of CdTe films using EQCM in a rotating disc electrode (RDE) configuration. From an instrumental perspective, the presented data illustrate the virtues of combining the QCM technique with cyclic voltammetry, coulometry, and hydrodynamic (RDE) voltammetry for studies of semiconductor film deposition.

Invariant sections in ytterbium-indium-soufre crystallographic descriptions of the phases

Likforman, A.,Lemoine, P.,Guittard, M.

, p. 213 - 220 (1993)

In the ternary Yb-In-S system two phases were identified and their structure determinated on single crystal by X ray diffraction. Yb4/3In4/3S4 belongs to a solid solution, it has a cubic structure intermediate between spinel and NaCl type. All metal sites are incompletely occupied. Yb18In7.33S36 is hexagonal. YbIII atoms have two types of environment with sevenfold prismatic and sixfold octahedral coordination. However, the octahedral sites are occupied also by InIII atoms. Large channels around the threefold and sixfold axes are occupied by InI or are empty. The two structures are analyzed. They have the particularity to have octahedral sites occupied by YbIII and InIII statistically disordered. The remost similar radii of YbIII and InIII atoms are likely the reason of the existence of the hexagonal phase not found for other rare earth atoms and also of the presence of a large solid solution, domain for the first phase.

Fabrication of crystalline mesoporous metal oxides and sulfides

Xue, Keyan,Chen, Dairong,Jiao, Xiuling

, p. 1191 - 1197 (2010)

Mesoporous metal oxides and sulfides were prepared by a simple solvothermal method using inorganic salts as metal sources and diethylene glycol (DEG) as solvent; they are formed by the aggregation of metal compound nanoparticles. The generality of this route to the mesoporous materials was proved by the fabrication of a series of mesoporous materials (TiO2, ZrO 2, ZnO, In2O3, ZnS, and In2S 3). Due to the different morphologies of nanoparticle subunits, the as-prepared mesoporous materials had different types of mesopores, which could be revealed by the N2 adsorption-desorption isotherms and transmission electron microscopy (TEM) images.

Room-temperature preparation of MIL-68 and its derivative In2S3 for enhanced photocatalytic Cr(VI) reduction and organic pollutant degradation under visible light

Fu, Huifen,Hang, Jing,Wang, Chong-Chen,Wang, Peng,Wu, Lin,Zhao, Chen

, (2020)

MIL-68, a typical In-based MOF, has been studied in many fields due to its excellent performance. Facile preparation of MIL-68, suitable for scalable preparation and industrial applications, is of great significance. In this work, a method for the room-temperature preparation of rod-like MIL-68 at the nano- and micro-scales was developed for the first time, in which water or salts such as NaF, sodium formate, sodium acetate and sodium propionate were used as modulating reagents. It appears that these modulating reagents can promote the deprotonation of terephthalic acid and the hydrolysis of indium salt to accelerate crystal nucleation. The size of MIL-68 can be controlled by changing the modulating reagents. Hollow porous In2S3 particles composed of assembled ultrathin nanosheets were obtained via sulfidation treatment using MIL-68 as a self-sacrifice template, and the obtained In2S3 exhibited excellent photocatalytic activity toward Cr(VI) reduction and methyl orange degradation under LED visible light irradiation. Furthermore, the photocatalytic mechanism and reusability were studied.

Highly efficient In2S3/WO3photocatalysts: Z-scheme photocatalytic mechanism for enhanced photocatalytic water pollutant degradation under visible light irradiation

Qiu, Qingqing,Zhu, Peng,Liu, Yao,Liang, Tongxiang,Xie, Tengfeng,Lin, Yanhong

, p. 3333 - 3341 (2021)

A Z-scheme system In2S3/WO3 heterojunction was fabricated via a mild hydrothermal method and further applied for photocatalytic degradation of tetracycline (TCH) and Rhodamine B (Rh B) under visible light irradiation. The morphological structure, chemical composition and optical properties were studied by XRD, SEM, HRTEM and UV-visible absorption spectra. The results revealed that In2S3/WO3 hierarchical structures were successfully constructed, and the prepared In2S3/WO3 photocatalysts exhibited enhanced visible-light absorption compared to pure WO3 nanorods, which are essential to improve the photocatalytic performance. The degradation rate of TCH using the In2S3(40 wt%)/WO3 heterostructure (WI40) photocatalyst was about 212 times and 22 times as high as that for pure WO3 and pure In2S3, respectively. The degradation rate of Rh B with the WI40 photocatalyst was about 56 times the efficiency of pure WO3 and 7.6 times that of pure In2S3. The results of the surface photovoltage (SPV), transient photovoltage (TPV) and reactive oxidation species (ROS) scavenger experiments indicated that the Z-scheme system of In2S3/WO3 is favorable for photoexcited charge transfer at the contact interface of In2S3 and WO3, which benefits the charge separation efficiency and depresses the recombination of photoexcited charge, resulting in favorable photocatalytic pollutant degradation efficiency under visible light irradiation.

Liquid ammonia mediated metathesis: Synthesis of binary metal chalcogenides and pnictides

Shaw,Parkin

, p. 6940 - 6947 (2001)

Addition of stoichiometric amounts of low valent metal halides to liquid ammonia solutions of disodium chalcogenide (Na2E; E = S, Se, Te) afforded a range of both crystalline (PbE (E = S, Se, Te), TIE (E = S, Se), Tl5Te3, Ag2E (E = S, Se, Te)) and X-ray amorphous (MS (M = Ni, Cu, Zn, Cd, Hg), M2E3 (M = Ga, In; E = S, Se, Te), HgE (E = Se, Te), CuE (E = S, Se, Te), Cu2S) metal chalcogenides in good yield (95%). Reactions between metal halides and sodium pnictides (Na3Pn; Pn = As, Sb) in liquid ammonia also afforded X-ray amorphous material (M3Pn2, M = Zn, Cd; MPn, M = Fe, Co, Ni) in good yield (95%). Isolation of the metal chalcogenides and pnictides was achieved through washing with CS2 and distilled water. All reactions were complete within 36 h. Products were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDXA), electron probe analysis, FR-IR spectroscopy, Raman spectroscopy, microanalysis, and band gap measurements. Annealing amorphous material at 250-300 °C for 48 h induced sufficient crystallinity for analysis by X-ray powder diffraction.

Bi3In4S10 and Bi14.7In 11.3S38: Two new bismuth sulfides with interesting Bi-Bi bonding

Yin, Wenlong,Mei, Dajiang,Yao, Jiyong,Fu, Peizhen,Wu, Yicheng

, p. 2544 - 2551 (2010)

Two new ternary bismuth chalcogenides, Bi3In4S 10 and Bi14.7In11.3S38, were synthesized from the reactions of binary sulfides via a two-step flux technique. Single-crystal X-ray diffraction analyses indicate that Bi3In 4S10 crystallizes in the non-centrosymmetric space group Pm and Bi14.7In11.3S38 crystallizes in the centrosymmetric space group P21/m. Both compounds adopt three-dimensional frameworks. A distinct structural feature in the two structures is the presence of chains of Bi atoms with alternating short BiBi bonds of around 3.1 and longer distances of around 4.6 . The optical band gaps of 1.42(2) eV for Bi3In4S10 and 1.45(2) eV for Bi14.7In11.3S38 were deduced from the diffuse reflectance spectra.

Room temperature synthesis of In2S3 micro- and nanorod textured thin films

Datta, Anuja,Panda, Subhendu K.,Gorai, Soma,Ganguli, Dibyendu,Chaudhuri, Subhadra

, p. 983 - 989 (2008)

Thin films of indium sulfide (In2S3) micro- and nanorods were successfully prepared by sulfurization of electrodeposited metal indium layers. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and UV-vis spectroscopy. From XRD and TEM observations it was concluded that the In2S3 nanorods and microrods have ~50 nm and ~0.5 μm diameter, respectively. A plausible top-growth mechanism was proposed for the formation of the nanorods in which the hydroxide layer was found to play an important role. The micro- and nanorods showed optical bandgap of ~2.2 and ~2.54 eV, respectively. This facile and cost effective method may be extended to fabricate other metal chalcogenide nanostructures on solid substrates.

Growth and the phase transition of indium sulfide ultrafine particle

Ueda, Masahiro,Suzuki, Hitoshi,Kido, Osamu,Shintaku, Masayuki,Kurumada, Mami,Sato, Takeshi,Saito, Yoshio,Kaito, Chihiro

, p. 1621 - 1624 (2005)

Indium sulfide particles produced in smoke have been analyzed by transmission electron microscopy. Three phases, α, β and β′ with the different external shapes were produced. A mixture phase of β and β′ was found and the lattice relation was elucidated. The phase transition temperatures were assigned to be 400°C (α to β) and 500°C (β′ to β). 2005 The Physical Society of Japan.

Carbon quantum dot decorated hollow In2S3 microspheres with efficient visible-light-driven photocatalytic activities

Huang, Changyou,Hong, Yuanzhi,Yan, Xu,Xiao, Lisong,Huang, Kai,Gu, Wei,Liu, Kuili,Shi, Weidong

, p. 40137 - 40146 (2016)

Carbon quantum dot (CQDs) decorated hollow In2S3 microspheres were firstly synthesized by a facile hydrothermal method. CQDs with an average size of 5 nm were attached on the surfaces of hollow In2S3 microspheres. The photocatalytic activities of the as-prepared samples were investigated by the photocatalytic degradation of methyl orange under visible light, and the 3 wt% CQDs/In2S3 sample presented the most efficient photocatalytic activity which was almost 3 times the pure In2S3 sample. On the basis of the active species trapping experiment and ESR analysis, holes and superoxide radicals were proved to be the main active species in the photocatalytic degradation process, and a possible reaction mechanism was proposed.

SEMICONDUCTOR PARTICLES IN BILAYER LIPID MEMBRANES. FORMATION, CHARACTERIZATION, AND PHOTOELECTROCHEMISTRY.

Zhao,Baral,Rolandi,Fendler

, p. 1012 - 1024 (1988)

Bilayer lipid membranes (BLMs) have been formed from bovine phosphatidylserine (PS), glyceryl monooleate (GMO), and a polymerizable surfactant. These BLMs were then used to provide matrices for the in situ generation of microcrystalline CdS, CuS, Cu//2S, PbS, ZnS, HgS, and In//2S//3. Semiconductors were formed by injecting appropriate metal ion precursors and H//2S into the bathing solutions on opposite sides of the BLM. Their presence was established by voltage-dependent capacitance measurements, absorption spectroscopy, and optical microscopy. Subsequent to the injection of H//2S, the first observable change was the appearance of fairly uniform white dots on the black film. These dots rapidly moved around and grew in size, forming islands that then merged with themselves and with a second generation of dots, which ultimately led to a continuous film that continued to grow in thickness.

Thermal Oxidation of V2S5/InP Heterostructures in Oxygen

Mittova,Soshnikov,Terekhov,Semenov

, p. 975 - 978 (2000)

X-ray emission and IR spectroscopy data are used to elucidate the mechanism of thermal oxidation of V2S5/InP structures in oxygen. The substrate-activator interaction is shown to have a significant effect on the oxidation mechanism and to improve the engineering performance of the structures.

Structural diversity by mixing chalcogen atoms in the chalcophosphate system K/ In/P/Q (Q = S, Se)

Rothenberger, Alexander,Wang, Hsien-Hau,Chung, Duckyoung,Kanatzidis, Mercouri G.

, p. 1144 - 1151 (2010)

The new thiophosphate salt K4In2(PS4) 2(P2S6) (1), the selenophosphate salts K 5In3(μ3-Se)(P2Se6) 3 (2), K4In4(μ-Se)2- (P 2Se6)3 (3), and the mixed seleno-/thiophosphate salt K4In4(μ-Se)(P2S2.36Se 3.64)3 (4) are described. For the first time, a structurally different outcome of a chalcophosphate reaction was observed when sulfur and selenium are mixed, for example, by the use of K2S/P 2Se5/S/In instead of K2Se/P2Se 5/Se/In or K2S/P2S5/S/In. In compounds 1-4 indium atoms exist in a variety coordination environments. While in 1, indium is octahedrally coordinated, in 2-4 tetrahedral, trigonalbipyramidal, and octahedral coordination environments are found for indium atoms. This remarkable structural diversity possibly is a reason, why particularly indium chalcophosphate flux reactions often produce a large variety of compounds at intermediate temperatures. In the mixed seleno-/thiophosphate salt K4In4(μ-Se)(P2S2.36Se 3.64)3 (4) most of the chalcogen sites around the tetrahedrally coordinated P atoms show mixed S/Se occupancy. There is, however, a preference for Se binding to In ions and S binding to potassium ions.

Origins of cracking in highly porous anodically grown films on InP

Harvey,Buckley,Chu,Sutton,Newcob

, p. B398-B402 (2002)

The nature of the surface films grown during the anodization of InP in an aqueous (NH4)2S electrolyte has been investigated. The previously reported cracking of these films is explicitly demonstrated to occur ex situ and not during the electrochemical treatment. The films have been identified as In2S3 and are shown to have a columnar morphology. The measured film thickness varies linearly with the charge density passed, and comparison between experimental measurements and theoretical estimates for the thickness indicates a porosity of 70-80% for the In2S3 film. Film cracking is attributed to shrinkage during drying of the highly porous film and does not necessarily imply stress in the wet as-grown film.

Vaporization chemistry and thermodynamics of the lead-indium-sulfur system by computer-automated Knudsen and torsion effusion methods

Haque, Reza,Gates, Alfred S.,Edwards, Jimmie G.

, p. 6301 - 6307 (1980)

Vaporization of PbIn2S4(s) was studied by computer-autometed simultaneous Knudsen and dynamic torsion effusion.Vapor pressures and the apparent molecular weight of the effusing vapor were displayed in real time.The vaporization reaction was PbIn2S4(s)=In2S3(s)+PbS(g).The vapor pressure was measured 108 times in the temperature range 948-1086 K.For the vaporization reaction, third-law analyses gave ΔH deg (298 K)=253.0+/-0.1 kJ/mol.The enthalpy of PbIn2S4(s) with respect to its contituents PbS(s) and In2S3(s) was -23+/-4 kJ/mol.The apparent molecular weight showed stoichiometry changes in indium sulfide during the experiment.Residual indium sulfide, remaining after loss of all PbS, vaporized with some nonstoichiometry by In2S3(s)=In2S(g)+S2(g).The vapor pressure of the residual indium was measured 57 times in the temperature range 1035-1121 K; third-law analyses yielded ΔH deg(298 K)=613.4+/-0.4 kJ/mol for the dissociative vaporization reaction.The compound Pb2In6S11(s), found at lower temperatures, had negligible stability at the temperatures of this investigation.The unit cell of PbIn2S4(s) was orthorhombic with a=2.275 nm, b=1.356 nm, and c=1.953 nm.

Full-color emission from In2S3 and In 2S3:Eu3+ nanoparticles

Chen, Wei,Bovin, Jan-Olov,Joly, Alan G.,Wang, Shaopeng,Su, Fuhai,Li, Guohua

, p. 11927 - 11934 (2004)

New observations on the luminescence of In2S3 and europium-doped In2S3 nanoparticles show a green (510 nm) emission from In2S3 and In1.8Eu 0.2S3 nanoparticles while a blue (425 nm) emission is observed from In1.6Eu0.4S3 nanoparticles. Both the blue and green emissions have large Stokes shifts of 62 and 110 nm, respectively. Excitation with longer-wavelength photons causes the blue emission to shift to a longer wavelength while the green emission wavelength remains unchanged. The lifetimes of both the green and blue emissions are similar to reported values for excitonic recombination. When doped with Eu3+, in addition to the broad blue and green emissions, a red emission near 615 nm attributed to Eu3+ is observed. Temperature dependences on nanoparticle thin films indicate that with increasing temperature, the green emission wavelength remains constant, however, the blue emission shifts toward longer wavelengths. Based on these observations, the blue emission is attributed to exciton recombination and the green emission to Indium interstitial defects. These nanoparticles show full-color emission with high efficiency, fast lifetime decays, and good, stability; they are also relatively simple to prepare, thus making them a new type of phosphor with potential applications in lighting, flat-panel displays, and communications.

Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition

Asenjo,Guilln,Chaparro,Saucedo,Bermudez,Lincot,Herrero,Gutirrez

, p. 1629 - 1633 (2010)

In2S3 films have been chemically deposited on ITO coated glass substrates by chemical bath deposition, using different deposition times and precursor concentrations. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD and micro-Raman, and surface morphology by SEM microscopy analysis. Also, the direct and indirect band-gaps and the surface gap states were studied with surface photovoltage spectroscopy (SPS). We proposed that electronic properties of the In2S3 samples are controlled by two features: shallow tail states and a broad band centred at 1.5 eV approximately. Their relation with the structure is discussed, suggesting that their origin is related to defects created on the S sub-lattice, and then both defects are intrinsic to the material.

Ba2AgInS4 and Ba4MGa5Se 12 (M = Ag, Li): Syntheses, structures, and optical properties

Yin, Wenlong,Feng, Kai,Mei, Dajiang,Yao, Jiyong,Fu, Peizhen,Wu, Yicheng

, p. 2272 - 2276 (2012)

The first two members in alkaline-earth/group XI/group XIII/chalcogen system, namely Ba2AgInS4 and Ba4AgGa 5Se12, were synthesized along with a Li analogue Ba 4LiGa5Se12. Ba2AgInS4 crystallizes in space group P21/c. It contains 2∞[AgInS 4]4- layers built from AgS3 triangles and InS4 tetrahedra with Ba2+ cations inserted between the layers. Ba4AgGa5Se12 and Ba 4LiGa5Se12 adopt two closely-related structure types in space group P421c with structural difference originating from the different positions of Ag and Li in them. The three-dimensional framework in Ba4AgGa5Se12 is composed of GaSe4 tetrahedra with the Ba and Ag atoms occupying the large and small channels respectively, whereas that in Ba4LiGa 5Se12 is built from LiSe4 and GaSe4 tetrahedra with channels to accommodate the Ba atoms. As deduced from the diffuse reflectance spectra measurement, the optical band gaps were 2.32 (2) eV, 2.52 (2) eV, and 2.65 (2) eV for Ba2AgInS4, Ba 4AgGa5Se12, and Ba4LiGa 5Se12, respectively. The Royal Society of Chemistry 2012.

Photocatalytic degradation of methyl orange by Ca doped β-In2S3 with varying Ca concentration

Chen, Yangfan,Li, Jiangling,Liu, Qingcai,Liu, Weizao,Ren, Shan,Yang, Jian,Yao, Wen

, (2022/03/27)

Industrial wastewater is becoming a universal environmental problem, wherein toxic organic compounds are important sources of pollution. For the degradation toxic organic compounds, semiconductor-based photocatalysis has attracted wide attentions due to their photo-electric properties and high efficiency. Due to lots of advantages of β-In2S3 and the promotion role of Ca-doped on the photocatalytic performance, the photocatalytic degradation of methyl orange by Ca doped β-In2S3 with varying Ca concentration were investigated. The results showed that calcium ion mainly entered into the crystalline lattices of β-In2S3 and the addition of Ca has changed the band structure of In2S3. The Ca0.8-β-In2S3 had a more abundant lamellar morphology and greater specific surface area than other Ca-doped β-In2S3. The increase in the adsorption sites and photocatalytic reaction sites, allowing Ca0.8-β-In2S3 to show the highest photocatalytic activity, which could degrade 98.37% of Methyl Orange (MO) in just 30?min. The improved photocatalytic performance of Ca0.8-β-In2S3 was also owed to the stronger visible light absorption, narrower band gap (2.16?eV), and photogenerated the effective separation of electron–hole pairs (e?/h+). When the light was shone onto the surface of Ca0.8-β-In2S3, more charge carriers and ·O2? were excited because Ca0.8-β-In2S3 had a narrower band gap and lower CB position. Additionally, h+ played a dominant role on the photocatalytic degradation of MO. Furthermore, the optimized Ca0.8-β-In2S3 photocatalyst had excellent stability and recoverability, which would be greatly helpful for practical application. The present work demonstrated that the optimal doping amount of Ca-doped β-In2S3 was 5.8%, which provides a favorable guideline for the further application of Ca-doped β-In2S3 to degrade pollutants.

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