40521-21-9

Basic information

• Product Name: indium formate
• Synonyms: indium formate
• CAS NO: 40521-21-9
• Molecular Formula: 3CHO₂*In
• Molecular Weight: 0
• Mol File: 40521-21-9.mol
• Article Data: 4

Chemical Properties

• Boiling Point: 100.6°Cat760mmHg
• Flash Point: 29.9°C
• Appearance: /
• Density: g/cm³
• Vapor Pressure: 36.5mmHg at 25°C
• CAS DataBase Reference: indium formate(CAS DataBase Reference)
• NIST Chemistry Reference: indium formate(40521-21-9)
• EPA Substance Registry System: indium formate(40521-21-9)

Safety Data

• Hazardous Substances Data: 40521-21-9(Hazardous Substances Data)

Usage

InChI:InChI=1/3CH2O2.In/c3*2-1-3;/h3*1H,(H,2,3);/q;;;+3/p-3

Upstream product

• 64-18-6 formic acid 
• 51437-68-4 sodium formate dihydrate 
• 144-55-8 sodium hydrogencarbonate 

Downstream Products

• 7440-74-6 indium 

Relevant articles and documents

New series of indium formates: Hydrothermal synthesis, structure and coordination modes

Three new indium(III) compounds, In(HCOO)3 (1), In 2(HCOO)5(OH) (2), and In(HCOO)2(OH) (3), were synthesized under hydrothermal conditions and characterized by single crystal and powder X-ray diffraction experiments, as well as by IR spectroscopy, elemental analysis, and coupled TG-DSC-MS measurement. All of these compounds adopt 3D framework structures consisting of InO6 octahedra and the 2.11 binding modes of formate with the (syn, syn-; syn, anti-; anti, anti-) configurations. The structural investigation of these indium formates reveals that the gradual introduction of the hydroxyl groups into the structures induces the polymerization of the InO6 octahedra, that is, InO6 is isolated in 1, becomes dimeric in 2, and finally forms 1D chains in 3. In addition, a simple formula that may be used for estimating the overall coordination number of the formate in Ma(HCOO)bL c is proposed.

Solution synthesis and characterization of indium-zinc formate precursors for transparent conducting oxides

A series of In-Zn formate mixtures were investigated as potential precursors to amorphous In-Zn-oxide (IZO) for transparent conducting oxide (TCO) applications. These mixtures were prepared by neutralization from formic acid and characterized by elemental analysis, IR spectroscopy, powder X-ray diffraction, and thermogravimetry-differential scanning calorimetry (TG-DSC) measurements. Thermal analysis revealed that a mixture of In and Zn formates reduced the overall decomposition temperature compared to the individual constituents and that OH-substitution enhanced the effect. In terms of precursor feasibility, it was demonstrated that the decomposition products of In-Zn formate could be directed toward oxidation or reduction by controlling the decomposition atmosphere or with solution acid additives. For TCO applications, amorphous IZO films were prepared by ultrasonic spray deposition from In-Zn formate solutions with annealing at 300-400 °C.