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Detail of "1445-79-0"

  • CAS Number:
  • 1445-79-0
  • Name:
  • Gallium, trimethyl-

  • Superlist Name:
  • Trimethylgallium
  • Molecular Structure:
  • Formula:
  • C3H9Ga
  • Molecular Weight:
  • 114.83
  • Deleted CAS:
  • 75325-77-8
  • Synonyms:
  • Trimethylgallium ((CH3)3Ga);Trimethylgallane;
  • EINECS:
  • 215-897-6
  • Density:
  • 1.151 g/cm3
  • Melting Point:
  • -15.8 °C
  • Boiling Point:
  • 55.7 °C
  • Flash Point:
  • -18 °C
  • Risk Codes:
  • 14-17-34
  • Safety:
  • 7-16-43-45 Details
  • Transport Information:
  • UN 2845

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CAS No.1445-79-0 Trimethylgallium

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Supplier:Hangzhou Dayangchem Co., Ltd. [ China (Mainland)]

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CAS No.1445-79-0 Trimethylgallium

TRIMETHYLGALLIUM

Supplier:huaibei sanhe developing co., ltd. [ China (Mainland)]

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CAS No.1445-79-0 Trimethylgallium

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Supplier:Tosoh Finechem Corporation [ Japan]

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CAS No.1445-79-0 Trimethylgallium

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Supplier:STREM [ United States]

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CAS No.1445-79-0 Trimethylgallium

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Supplier:UBE Industries [ Japan]

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CAS No.1445-79-0 Trimethylgallium

Supplier:Air Liquide America L.P. [ United States]

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CAS No.1445-79-0 Trimethylgallium

Supplier:SHAANXl HELIN ELECTRONlC MATERlAERS CO.,LTD. [ China (Mainland)]

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CAS No.1445-79-0 Trimethylgallium

Supplier:Aemon Chemical Technology Co. Limited [ China (Mainland)]

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CAS No.1445-79-0 Trimethylgallium

Supplier:Beijing zhongke expanding chemical technology Co., LTD. [ China (Mainland)]

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Reference

Thermal decomposition of trimethylgallium
Thermal decomposition of trimethylgallium. Baev, A. K.; Gubar, Yu. L. (Beloruss.Chemical with cas number 1445-79-0 also plays role. Tekknol. Inst. im. Kirova, Minsk, USSR). Zh. Fiz. Khim., 50(10), 2722 (Russian) 1976. CODEN: ZFKHA9. DOCUMENT TYPE: Journal CA Section: 22 (Physical Organic Chemistry) The activation energy of Me3Ga decompn. (377-408.degree.) was 22.0 .+-. 2.0 kcal/mol. .
An examination of the product catalyzed reaction of trimethylgallium with phosphine and the mechanism of the chemical vapor deposition of gallium phosphide and gallium arsenide
An examination of the product catalyzed reaction of trimethylgallium with phosphine and the mechanism of the chemical vapor deposition of gallium phosphide and gallium arsenide. Schlyer, D. J.In this study, 7803-51-2 and 1445-79-0 are also used.; Ring, M. A. (Dep. Chem., San Diego State Univ., San Diego, Calif., USA). J. Electrochem. Soc., 124(4), 569-73 (English) 1977. CODEN: JESOAN. DOCUMENT TYPE: Journal CA Section: 75 (Crystallization and Crystal Structure) Section cross-reference(s): 76, 67 The formation of GaP by reaction of Me3Ga with PH3 was examd. The reaction follows a Langmuir-Hinshelwood mechanism (adsorption of both reagents prior to reaction). The GaP surface was also found to catalyze the unimol. decompn. of PH3 and Me3Ga. These results and similar ones for the reaction of Me3Ga with AsH3 are discussed. .
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