13537-07-0

Basic information

• Product Name: SILANE-D4
• Synonyms: SILANE-D4;[2H4]silane;SILANE-D4, 98 ATOM % D, ELECTRONIC GRADE;SILANE-D4 (GAS) 98%;98atom%delectronicgrade;SILANE-D4 ISOTOPIC ENRICHMENT
• CAS NO: 13537-07-0
• Molecular Formula: H₄Si
• Molecular Weight: 36.14
• EINECS: 236-899-3
• Mol File: 13537-07-0.mol

Chemical Properties

• Melting Point: −185 °C(lit.)
• Boiling Point: -112°C
• Flash Point: °C
• Appearance: /
• Density: 1.114 g/mL at 25 °C(lit.)
• Vapor Pressure: 54300mmHg at 25°C
• CAS DataBase Reference: SILANE-D4(CAS DataBase Reference)
• NIST Chemistry Reference: SILANE-D4(13537-07-0)
• EPA Substance Registry System: SILANE-D4(13537-07-0)

Safety Data

• Hazard Codes: F,Xn
• Statements: 12-17-20-42-36/37/38-20/21
• Safety Statements: 9-16-33-36/37/39-26-24
• RIDADR: 2203
• Hazardous Substances Data: 13537-07-0(Hazardous Substances Data)

Usage

InChI:InChI=1/H4Si/h1H4

Upstream product

• 16873-17-9 deuterium 
• 7440-21-3 silicon 
• 10026-04-7 tetrachlorosilane 
• 13537-08-1 disilane-d6 
• 106-99-0 buta-1,3-diene 

Downstream Products

• 7789-20-0 water-d2 
• 14940-63-7 water 
• 16873-17-9 deuterium 
• 122686-68-4 ⁽²⁾H₂Si₄⁽¹⁺⁾ 
• 122686-66-2 ⁽²⁾H₂Si₂⁽¹⁺⁾ 
• 113687-07-3 ⁽²⁾HSi⁽²⁹⁾Si⁽¹⁺⁾ 
• 13587-51-4 silane 
• 69103-84-0 silyl-d3 radical 
• 110015-57-1 ⁽²⁾H₃Si⁽¹⁺⁾ 
• 114480-99-8 ⁽²⁾H₄Si₃⁽¹⁺⁾ 

Relevant articles and documents

Toward a more detailed understanding of oxidative-addition mechanisms: Combined experimental and quantum-chemical study of the insertion of titanium atoms into C-H, Si-H, and Sn-H bonds

The reactions between Ti atoms and CH4, SiH4, and SnH4 at a temperature of 12 K in Ar matrixes were studied experimentally by IR spectroscopy, taking in the effect of isotopic substitution, and by quantum-chemical calculations. The experiments show that the reactivity changes considerably from CH4 to SiH4 or SnH4. The reaction between Ti and CH4 proceeds inefficiently, and only after photolytic activation of the Ti atoms does insertion occur to give HTiCH3, which features only terminal Ti-H and C-H bonds. On the other hand, reactions with SiH4 and SnH 4 occur upon deposition, leading to the products cis- and trans-HTi(μ-H)2SiH and HTi(μ-H)3E (E = Si, Sn). Selective photolysis can be used to increase the yields of these products. In agreement with the experimental results, quantum-chemical calculations predict the lowest energy form of a molecule with the overall formula TiEH4 to be HTiCH3 with only terminal H atoms for E = C but HTi(μ-H)3E with three bridging H atoms in the case of E = Si, Sn.

STUDIES OF a-Si:H: GROWTH MECHANISM BY RUTHERFORD RECOIL MEASUREMENT OF H AND D IN FILMS PREPARED FROM SiH4-D2 AND SiD4-H2.

a-Si:H films were prepared by rf glow discharge in SiH//4-D//2 or SiD//4-H//2 mixtures and analyzed for H and D by Rutherford forward recoil measurement in order to study its growth mechanism. In a low power rf discharge, more H atoms than D atoms were incorporated in the a-Si:H film even in the SiH//4(1 vol)-D//2(4 vol) mixture. With increase in the rf power, the H to D ratio in the film approaches the ratio in the gas for rf power ranges relatively high in the experiment, but is usual in practical production of a-Si:H. The two ratios were found to be almost equal, independent of the gas composition.

Infrared spectra of group 14 hydrides in solid hydrogen: Experimental observation of Pbh4, Pb2H2, and Pb2H4

Laser-ablated Si, Ge, Sn, and Pb atoms have been co-deposited with pure hydrogen at 3.5 K to form the group 14 hydrides. The initial SiH2 product reacts completely to SiH4, whereas substantial proportions of GeH2, SnH

Shock-induced kinetics of the disilane decomposition and silylene reactions with trimethylsilane and butadiene

The homogeneous gas-phase decomposition kinetics of disilane have been studied by the comparative rate, single-pulse shock-tube technique in the 850-1000 K (2300-2700 torr) ranges. Two primary dissociation processes occur, Si2H6-i SiH4/su