- VUV photoionization time-of-flight mass spectrometry of flash pyrolysis of silane and disilane
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Flash pyrolysis of silane, SiH4, and disilane, Si2H6, diluted in He or Ar (1%), was carried out at temperatures ranging from ~700 to ~1500 K. After a short reaction time of ~20 μs, the initial products were isolated in a supersonic molecular beam and detected by single vacuum ultra-violet (VUV) photon (λ=118or121nm) ionization time-of-flight mass spectrometry (TOFMS). Initial decomposition and reaction products, both free radical intermediates and stable species, were directly observed, which included SiH2 and Si2H4.
- Chambreau, Steven D.,Zhang, Jingsong
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- Thermodynamics of the Si-O-N system: I. High-temperature study of the vaporization behavior of silicon nitride by mass spectrometry
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Si3N4(s) powders are vaporized in effusion cells, and the gaseous phase, analyzed by mass spectrometry, is composed of N2, Si, Si2, Si3, SiN, and Si2N. Owing to retarding vaporization of N
- Rocabois,Chatillon,Bernard
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- Absolute Rate Constants for the Gas-phase Reactions of Silylene with Silane, Disilane and the Methylsilanes
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Absolute rate constants for reactions of silylene have been determined by time-resolved measurements of its decay at room temperature, following formation by pulsed-laser photolysis of phenylsilane in the presence of various added silanes.For SiH4 and Si2H6 the rate coefficients are pressure dependent and the former reaction is succesfully modelled using RRKM theory.High-pressure (or pressure-independent) rate constants (in 10-10 cm3 molecule-1 s-1) are: SiH4, ca. 4.0; Si2H6, ca. 6.5; MeSiH3, 3.66 +/- 0.22; Me2SiH2, 3.31 +/- 0.26; Me3SiH, 2.47 +/- 0.14.Theseresults are compared with other determinations and the rate constants for the analogous reactions of SiMe2.A model for the insertion reaction is proposed in which the nucleophilic stage of the process plays an important role.
- Baggott, James E.,Frey, H. Monty,Lightfoot, Phillip D.,Walsh, Robin,Watts, Ivy M.
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- Prototype Si-H Insertion Reaction of Silylene with Silane. Absolute Rate Constants, Temperature Dependence, RRKM Modelling and the Potential-energy Surface
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Time-resolved studies of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with monosilane, SiH4.The reaction was studied in the gas phase over the pressure ran
- Becerra, Rosa,Frey, H. Monty,Mason, Ben P.,Walsh, Robin,Gordon, Mark S.
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- Photochemical Synthesis of Disilane from Silane with Infrared Laser Radiation
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We report the clean and efficient conversion of silane to disilane by CO2 laser irradiation.The direct irradiation of pure silane at high pressures (from 75 1700 Torr) converts silane to disilane with high selectivity and with efficient use of the absorbe
- Zavelovich, Joshua,Lyman, John L.
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- Infrared Multiphoton Decomposition of Monosilane
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The decomposition of SiH4 by infrared radiation from a pulsed CO2 TEA laser at 944.19 cm-1 has been studied in the pressure range of 10-22 torr and at a fluence of 1.0 J/cm2.The products observed are H2, Si2H6, Si3H8, Si4H10, Si5H12, and a solid (SiHx)n.The energy absorption from the laser beam increases with increasing pressure of SiH4 and/or of He, showing that collisions are necessary to pump molecules into the quasicontinuum from which resonant absorption of the laser photon occurs readily.The addition of He also increases the decomposition rate showing that the decomposition is a multiphoton decomposition and not a purely thermal reaction.The primary dissociation of SiH4 is to H2 and SiH2 and it is the further reactions initiated by attack of SiH2 on SiH4 that cause the observed decomposition.It is shown that the results are accounted for by a Boltzmann distribution of infrared photons in SiH4 and a reaction mechanism identical with that shown to obtain in the pyrolysis of SiH4.
- Longeway, P. A.,Lampe, F. W.
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- Infrared Spectra and ab Initio Calculations of Disilane and Methylsilane Complexes with HF in Solid Argon
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HF complexes with disilane and four methylsilanes were prepared in argon matrices and studied by use of infrared spectroscopy and ab initio calculations.The spectrum of the disilane- -HF complex was very similar to the silane- -HF complex reported previou
- Davis, Steven R.,Andrews, Lester
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- Unusually selective synthesis of chlorohydrooligosilanes
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New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes
- Lainer, Thomas,Fischer, Roland,Leypold, Mario,Holthausen, Michael,Wunnicke, Odo,Haas, Michael,Stueger, Harald
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supporting information
p. 13812 - 13815
(2020/11/18)
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- Method for preparing hydrogen silane by using calcium hydride to conduct reduction on chlorosilane
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The invention discloses a method for preparing hydrogen silane by using calcium hydride to conduct reduction on chlorosilane and belongs to the technical field of chlorosilane reduction. The problemsof harsh reaction conditions, low reaction speed and the like of chlorosilane reduction through CaH2 in the prior art are solved. In an organic solvent, under catalysis of a catalyst, calcium hydrideis used as a reducing agent, and chlorosilane is reduced into hydrogen silane; the catalyst is borane or borohydride or lithium aluminum hydride, and the organic solvent is tetrahydrofuran or diethylene glycol dimethyl ether or other ether solvents. The method can be applied to hydrogen silane preparation through chlorosilane reduction.
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Paragraph 0096-0097
(2018/07/30)
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- Matrix reactivity of Zn, Cd, or Hg atoms (M) in the presence of silane: Photogeneration and characterization of the insertion product HMSiH3 in a solid argon matrix
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Matrix-isolation experiments give evidence that broad-band UV-vis irradiation (200 ≤ λ ≤ 800 nm) of an Ar matrix doped with SiH4 and a group 12 metal atom M (M = Zn, Cd, or Hg) induces metal insertion into an Si-H bond to give the silyl metal hydride molecule HMSiH3 as the primary product. Si2H6 is a second product, irrespective of the identity of M, while the binary hydride MH2 is also formed when M = Zn or Cd. The products have been identified by their IR spectra and experiments with SiD4, together with the results of quantum chemical calculations, have provided the means of authentication. The properties of the HMSiH3 molecules are compared with those of related species, and consideration is given to how the products come to be formed.
- Macrae, Victoria A.,Greene, Tim M.,Downs, Anthony J.
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p. 1393 - 1402
(2007/10/03)
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- Infrared spectra of group 14 hydrides in solid hydrogen: Experimental observation of Pbh4, Pb2H2, and Pb2H4
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Laser-ablated Si, Ge, Sn, and Pb atoms have been co-deposited with pure hydrogen at 3.5 K to form the group 14 hydrides. The initial SiH2 product reacts completely to SiH4, whereas substantial proportions of GeH2, SnH
- Wang, Xuefeng,Andrews, Lester
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p. 6581 - 6587
(2007/10/03)
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- Dehydrogenative Build-up Reactions to Silyl-Substituted Alkali Metal Germanides, Stannides, and Phosphides; Molecular Structure of Neopentasilane
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The build-up reaction between monosilane and dispersed sodium or potassium in diethyleneglycol dimethyl ether leads to alkali metal silylsilanides of the composition (Na/K)SiH3-n(SiH3)n (n = 0-3) (1, 1a-c; 2, 2a-c).By subsequent reactions with silyl nonafluorobutanesulfonate, C4F9SO3SiH3, benzenesulfonic acid, PhSO3H, and methyl p-toluenesulfonate the corresponding silanes SiH4-n(SiH3)n (n = 0-4) (3, 3a-d) and methylsilanes CH3SiH3-n(SiH3)n (n = 0-3) (4a-d) were obtained in good yield.The molecular structure of neopentasilane (3d) has been determined by electron diffraction analysis.Treatment of group IV and V hydrides GeH4, PH3, and SnH4 with mixtures of sodium or potassium silylsilanides (1, 1a-c; 2, 2a-c) leads to silyl-substituted sodium or potassium germanides (Na/K)GeH3-n(SiH3)n (n = 1-3) (5a-c, 6a-c), phosphides KPH2-n(SiH3)n (n = 1-2) (7a-b), and stannides NaSnH3-n(SiH3)n (n = 1-3) (8, 8a-c). - Key Words: Alkali metal silylsilanides / Alkali metal silylgermanides / Sodium silylstannides / Potassium silylphosphides / Neopentasilane / Electron diffraction
- Lobreyer, Thomas,Sundermeyer, Wolfgang,Oberhammer, Heinz
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p. 2111 - 2116
(2007/10/02)
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- Surface Loss Coefficients for the Silyl Radical
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Direct loss measurements for the heterogeneous reaction of the silyl radical, SiH3, obtained in a discharge flow reactor with mass spectrometric detection, are reported.From these measurements and the calculated gas-surface collision frequency, total surface loss coefficients, β, are determined for silyl on two different surfaces, one coated with a growing silicon-containing film and the other coated with Halocarbon wax.
- Jasinski, Joseph M.
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p. 7385 - 7387
(2007/10/02)
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- Preparative synthesis of disilane from hexaethoxydisilane and diisobutylaluminum hydride
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A preparative method for the synthesis of Si2H6 from Si2(OEt)6 and (i-Bu)2AlH is developed. - Keywords: disilane, synthesis, diisobutylaluminum hydride, hexaethoxydisilane.
- Korneev, N. N.,Belik, G. I.,Belov, E. P.,Govorov, N. N.,Karimova, N. R.,et al.
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p. 764 - 765
(2007/10/02)
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- Decomposition kinetics and thermochemistry of butyl- and pentylsilylenes
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Reaction kinetics of alkylsilylenes (R = butyl, pentyl, and methylpentyl) and silacyclopropane intermediates produced by silylene additions to 1-butene, 1- and 2-pentene, 2-methyl-1-pentene, and 4-methyl-1-pentene are reported. Observations are consistent with a homogeneous, Barton2-type mechanism, which describes alkylsilylene isomerization and decomposition in terms of silacyclopropane (SCP) intermediates. Modeling studies on this basis conclude that SCP-forming and -opening reactions are at least an order of magnitude faster than SCP decompositions to olefins and SiH2. All reactions are pressure dependent at 400 Torr. Decomposition versus trapping comparative rate data at 410 Torr, based on butylsilylene- and pentylsilylene-trapping reactions with silane of 4.8 × 109 M-1 s-1 and 3.1 × 109 M-1 s-1, respectively, give limiting high-pressure Arrhenius parameters for the butyl- and pentylsilylene decompositions of log A∞ = 15.5 ± 0.1, E∞ = 22.5 ± 0.3 kcal. The activation energies are consistent with the decomposition reaction thermochemistries (Δdec = 26.6 ± 3.4 kcal, Δdec = 25.3 ± 3.4 kcal), and A factors indicate surprisingly loose transition states for both alkysilylene decompositions as well as their reverse silylene/olefin additions. A loose silylene/olefin addition complex is suggested for the transition state as the thermochemistry of decomposition precludes the intermediacy of biradicals. Generic high-pressure Arrhenius parameters (A, s-1: E, kcal) are deduced for silacyclopropane ring-opening (o), -closing (c), and -decomposition (d) reactions: log Ac = 12.3, Ec = 10.4; log Ao = 14.0, Eo = 14.7 + ΔE; log Ad = 16.9, Ed = 26.1 + ΔE, where ΔE = (49.6 - SCP strain energy). The low SCP ring-closing activation energy indicates zero ring strain development in the transition state and is consistent with a reanalysis of prior estimates of the activation energy of the SiH2 + CH4 strain free, C-H bond insertion reaction.
- Dickinson,O'Neal,Ring
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p. 3513 - 3520
(2008/10/08)
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- Photoionization mass spectrometric studies of the transient species Si2Hn (n = 2-5)
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The transient species Si2H5, Si2H4, Si2H3, and Si2H2 have been prepared for the first time, by reactions of F atoms with Si2H6.The species are generated in situ and studied by photoionization mass spectrometry.The adiabatic ionization potentials are (in e
- Ruscic, B.,Berkowitz, J.
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p. 2416 - 2432
(2007/10/02)
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- Kinetics and Mechanism of the Reactions of O(3P) with SiH4, CH3SiH3, (CH3)2SiH2, and (CH3)3SiH
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The reactions of O(3P) atoms with the silanes Me4-nSiHn (n = 1-4) have been investigated at room temperature in a discharge flow system with mass spectrometric detection and also in stationary photolysis experiments.Analysis of the end products provided conclusive evidence that the only primary process occuring in each case was the abstraction of hydrogen from the Si-H bond by the O atom leading to the formation of the OH and silyl radicals.The values of the rate constants obtained are k/10-13 cm3 s-1): k(O + SiH4) = 3.5, k(O + SiD4) = 1.4, k(O + MeSiH3) = 8.9; k(O + Me2SiH2) = 18.0, k(O + Me3SiH) = 30.6, and k(O + Me3SiD) = 16.0.The marked increase in rate constant with methylation is unexpected in view of the known similarity of the Si-H bond dissociation energy in SiH4 and the methylsilanes.A possible explanation is offered in terms of a reaction model involving partial charge transfer from Si to the attacking O, followed by proton transfer.
- Horie, O.,Taege, R.,Reimann, B.,Arthur, N. L.,Potzinger, P.
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p. 4393 - 4400
(2007/10/02)
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- Direct kinetic studies of SiH3 + SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy
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Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy.Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems.The silyl recombination reaction, SiH3 + SiH3 -> Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities.Analysis yields a refinement of the rate constant, krc = (7.9 +/- 2.9) * 10-11 cm3 molecule-1 s-1.By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H + SiH3 and H + SiH4 are determined to be (2 +/- 1) * 10-11 and (2.5 +/- 0.5) * 10-13 cm3 molecule-1 s-1, respectively.Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions.Derived upper limits to the rate constants show these reactions to be slow at room temperature.The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules.Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.
- Loh, S. K.,Jasinski, J. M.
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p. 4914 - 4926
(2007/10/02)
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- Role of Silylene in the Deposition of Hydrogenated Amorphous Silicon
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The role of silylene in the laser deposition of hydrogenated amorphous silicon has been studied with laser-induced fluorescence and deposition rate measurements.The rate constants of the reactions of silylene and disilane and of the reverse reactions have been determined.The results show that silylene is rapidly consumed, exhibiting only a small effective lifetime.It proves that generally silyllene hardly be able to reach the surface to form amorphous silicon.The comparison of the kinetic data with the deposition rates shows that in IR laser CVD silylene starts the gas-phase chemistry and that disilene is the main film-forming molecule.The UV laser process starts with a different primary dissociation leading to silylene, which also rearranges to the film-forming disilene.
- Dietrich, Thomas R.,Chiussi, Stefano,Marek, Michael,Roth, Angelika,Comes, Franz J.
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p. 9302 - 9310
(2007/10/02)
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- Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane
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Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane have been determined from direct time resolved measurements of silylene removal at room temperature.Silylene was generated and detected using laser resonance absorption flash kinetic spectroscopy.The rate constants are pressure dependent, consistent with expectations for the insertion reactions typical of silylene.The pressure dependence of the overall rate constants has been determined from 1 to 100 Torr for reaction with hydrogen and silane and from 1 to 10 Torr for reaction with disilane.The results for reaction with hydrogen and silane have been successfully modeled using RRKM theory and high pressure bimolecular rate constants have been extracted.The rate constants detrmined in this work are significantly (10-104 times) faster than those calculated from literature values for the Arrhenius parameters.These findings require a significant upward revision in the heat of formation of silylene, and may require modification of chemical vapor deposition mechanism in which silylene is invoked as a film growth precursor.
- Jasinski, Joseph M.,Chu, Jack O.
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p. 1678 - 1687
(2007/10/02)
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- Gas-phase homolytic substitution reactions of hydrogen atoms at silicon centers
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The reaction of H atoms with a number of mono-, di-, and trisilanes has been studied with the view of examining the possible occurrence of a homolytic substitution reaction (SH2). Arrhenius parameters for abstraction plus substitution have been determined for the reaction of H atoms with Si2H6, Me3SiSiMe2H, Me3SiSiCl3, Si2Cl6, and Me8Si3. The ratio of substitution vs. abstraction was determined. It is found that di- and trisilanes react fast by an SH2 reaction while monosilanes are unreactive. Ligands with a -I effect cause a decrease in reactivity. The experimental facts are explained by a frontside attack of the H atoms due to the favorable interaction of the singly occupied orbital at the H atom with the energetically high-lying Si-Si orbital.
- Fabry,Potzinger,Reimann,Ritter,Steenbergen
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p. 1231 - 1235
(2008/10/08)
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- Formation of Silylgermane by a Silylene Insertion Reaction in the Infrared Photochemistry of Monosilane-Monogermane Mixtures
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The infrared photodecomposition at 944.2 cm-1 of silane-germane mixtures has been studied over a pressure range of 24-26 torr and over a temperature range of 295-356 K.The products observed are hydrogen, disilane, silylgermane, trace amounts of trisilane, and solid polymeric material.Digermane formation was not observed.The primary photodecomposition of SiH4 is to SiH2 + H2; this is followed by insertion of SiH2 into an Si-H bond of SiH4 or a Ge-H bond of GeH4 to form Si2H6 or SiH3GeH3, respectively.On the basis of our studies of the competitive rates of SiH3GeH3 and Si2H6 formation as a function of temperature, and those in the literature relative to the absolute rate of insertion of SiH2 into SiH4, we derive the value k2=1010.4+/-0.5 exp3 J/RT> L mol-1 s-1 for the specific reaction rate of insertion of SiH2 into a Ge-H bond of germane.
- Zhu, Pei-ran,Piserchio, M.,Lampe, F. W.
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p. 5344 - 5347
(2007/10/02)
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- Decomposition channels of chemically activated disilane. The π bond energy of disilene and its derivatives
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The Hg (3P1) sensitized photolysis of an H2/SiH4 mixture not only yields Si2H6 but also Si3H8 and Si4H10. The formation of the latter two products as well as parts of the Si2H6 yield is explained by the decomposition of chemically activated disilane, formed by the combination of two silyl radicals. The activated disilane decomposes mainly into SiH2 + SiH4 which finally reacts to Si2H6 and to a lesser extent into H2 + H3SiSiH: and H2 + H2SiSiH2. The silykilylene inserts into SiH4 yielding Si3H8, while disilene is thought to be scavenged successively by two SiH3 radicals, the main reactive species under the given conditions. From the relative rate constants of the three decomposition channels, ΔHf(H3SiSiH:) = 273 ± 11 kJ/mol can be calculated. Also a lower bound to the π bond energy of disilene Bπ(H2SiSiH2) ≥ 69 ± 11 kJ/mol is obtained. Ab initio CI calculations give Bπ(H2SiSiH2) = 93 ± 8 kJ/mol. A substituted disilene is shown to have a probable π bond energy of 108 ± 20 kJ/mol from a thermochemical analysis of literature data.
- Olbrich,Potzinger,Reimann,Walsh
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p. 1267 - 1272
(2008/10/08)
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- Infrared Laser Photochemistry of SiH4-HCl Mixtures
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The infrared laser photochemistry of SiH4-HCl mixtures has been studied in a pressure range of 28-60 torr and in a temperature range of 295-414 K.The gaseous products observed are H2, Si2H6, SiH3Cl, SiH2Cl2, and SiHCl3 with trace amounts of Si3H8 and Si2H5Cl.As is usual in silane decompositions, a solid product containing silicon, hydrogen, and perhaps very small amounts of chlorine was also formed.The photochemical conversion is best described by initial decomposition of SiH4 to SiH2 and H2 followed by competition of SiH4 and HCl for SiH2 molecules.The simultaneous formation of all chlorosilanes suggests that decomposition of the initial product of SiH2-HCl reaction leads in turn to SiHCl and SiCl2 molecules.Studies of the temperature dependence of the rates of the competing reactions indicate that the activation energy for insertion of SiH2 into HCl is less than 1.3 kcal/mol.
- Moore, C. B.,Biedrzycki, J.,Lampe, F. W.
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p. 7761 - 7765
(2007/10/02)
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- Decomposition Kinetics of a Static Direct Current Silane Glow Discharge
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We have studied the decomposition kinetics of a static de silane discharge using mass spectrometric techniques.The principal neutral products observed were hydrogen, disilane, trisilane, trace amounts of higher silanes, and nonstoichiometric silicon hydride solids.The initial rates of formation of the products and depletion of the silane were measured and found to be independent of silane pressure and had a linear dependence on the discharge current.Nitric oxide, a known free-radical scavenger, was introduced into the discharge to determine the relative yields of SiH3 and SiH2.The primary decomposition was found to proceed approximately 80-90percent to the silyl radical, SiH3.The effects of NO addition were the reduction in the formation rate of disilane and trisilane and almost total suppression of solid formation.We propose a mechanism which includes both ion and neutral radical reactions and conclude that the major decomposition processes lead to SiH3 and SiH2.Kinetic treatment of the mechanism gave values for the product yields that were in good agreement with the observed yields.
- Longeway, P.A.,Estes, R.D.,Weakliem, H.A.
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- Infrared Multiphoton Decomposition of Monosilane Sensitized by Silicon Tetrafluoride
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The decomposition of SiH4, sensitized by the multiphoton absorption of unfocussed infrared laser radiation by SiF4, has been studied at a fluence of 0.31 J/cm2 and over a total pressure range of 3-16 torr.In contrast to the direct infrared multiphoton induced decomposition, the only volatile products observed are H2 and Si2H6 which, within experimental error, are formed in equal amounts.It is proposed that collisional energy transfer from vibrationally excited SiF4 produces internally excited SiH4 molecules which break down exclusively to SiH2 and H2.This is followed by insertion of SiH2 into SiH4 to form Si2H6.The absence of Si3H8 and higher silanes in the volatile products, which is characteristic of other silane decomposition studies, is attributed to the absence of SiH3 radicals and the fact that the SiH4 molecules attacked by SiH2 contain only that excess vibrational energy characteristic of thermal equilibrium at 300 K.
- Longeway, P. A.,Lampe, F. W.
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p. 354 - 358
(2007/10/02)
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- The 147-nm Photolysis of Disilane
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The photodecomposition of Si2H6 at 147 nm results in the formation of H2, SiH4, Si3H8, Si4H10, Si5H12, and a solid film of amorphous silicon hydride (a-Si:H).Three primary processes are proposed to accoount for the results, namely, (a) Si2H6 + hν -> SiH2 + SiH3 + H (φa=0.61); (b) Si2H6 + hν -> SiH3SiH + 2H (φb=0.18); (c) Si2H6 + hν -> Si2H5 + H (φc=0.21).The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si2H6 are Φ(-Si2H6)=4.3+/-0.2, Φ(SiH4)=1.2+/-0.4, Φ(Si3H8)=0.91+/-0.08, Φ(Si4H10)=0.62+/-0.03, Φ(Si,wall)=2.2.Quantum yields for H2 formation were not measured.A mechanism is proposed which is shown to be in accord with the experimental facts.
- Perkins, G. G. A.,Lampe, F. W.
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p. 3764 - 3769
(2007/10/02)
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- Vibrational spectra of crystalline disilane and disilane-d6, barrier to internal rotation and some normal coordinate calculations on H3SiSiH3, H3SiNCO, and H3SiNCS
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The Raman spectra of gaseous disilane and disilane-d6 as well as the Raman and infrared spectra of their crystalline solids at 20 K have been recorded from 25 to 3500 cm-1.Two quantum torsional transitions of the SiH3 moiety were observed at 233 and 251 cm-1 in the Raman spectrum of gaseous disilane.A barrier to internal rotation of 439 +/- 10 cm-1 (1.26 kcal/mol) has been calculated on these frequencies.The crystalline modification of disilane at 20 K was shown to belong to the monoclinic space group .There are two molecules per unit cell each of which sits on identical Ci sites.The results of normal coordinate analyses of H3SiSiH3, H3SiNCO, and H3SiNCS are presented and the force fields obtained for the H3Si moieties are compared.
- Durig, J.R.,Church, J. S.
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p. 4784 - 4797
(2007/10/02)
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