13465-77-5

Basic information

• Product Name: HEXACHLORODISILANE
• Synonyms: 1,1,1,2,2,2-Hexachlorodisilane;Disilane, hexachloro-;hexachloro-disilan;Si2Cl6;HEXACHLORODISILANE;Disilicon hexachloride;Hexachlorodisilane,96%;Hexachlorodisilane (HCDS)
• CAS NO: 13465-77-5
• Molecular Formula: Cl₆Si₂
• Molecular Weight: 268.89
• EINECS: 236-704-1
• Product Categories: Si (Classes of Silicon Compounds);Si-Cl Compounds;Si-Si Compounds;Trichlorosilanes;Self Assembly&Contact Printing;Self-Assembly Materials;Silane Coupling Agents/Adhesion Promoters;SilanesSelf Assembly&Contact Printing;Chlorosilanes, oligosilanes
• Mol File: 13465-77-5.mol
• Article Data: 5

Chemical Properties

• Melting Point: <0°C
• Boiling Point: 144-145.5 °C(lit.)
• Flash Point: 78°C
• Appearance: /liquid
• Density: 1.562 g/mL at 25 °C(lit.)
• Vapor Pressure: 6.39mmHg at 25°C
• Refractive Index: n20/D 1.475(lit.)
• Storage Temp.: below 5° C
• Solubility: sol CHCl3, CH2Cl2, benzene, THF; reacts violently, producing toxic fumes, with H2O, alcohols.
• Stability: Stable, but reacts violently with water. Moisture sensitive. May be shock sensitive. Incompatible with water, moisture, acids, s
• CAS DataBase Reference: HEXACHLORODISILANE(CAS DataBase Reference)
• NIST Chemistry Reference: HEXACHLORODISILANE(13465-77-5)
• EPA Substance Registry System: HEXACHLORODISILANE(13465-77-5)

Safety Data

• Hazard Codes: C
• Statements: 14-34
• Safety Statements: 26-36/37/39-45
• RIDADR: UN 2987 8/PG 2
• WGK Germany: 3
• F: 3-10-21
• TSCA: Yes
• HazardClass: 8
• PackingGroup: II
• Hazardous Substances Data: 13465-77-5(Hazardous Substances Data)

Usage

Chemical Properties

colourless liquid

Physical properties

bp 144–145.5 °C; d 1.562 g cm?3.

Uses

Different sources of media describe the Uses of 13465-77-5 differently. You can refer to the following data:
1. Hexachlorodisilane can be used in deoxygenation and desulfurization of phosphine oxides, phosphine sulfides, and amine oxides; reducing agent for nitro groups and sulfur diimides.
2. HCDS may be used as a reducing agent. It may be combined with ammonia to form silicon nitride by chemical vapor deposition(CVD) technique.

General Description

Hexachlorodisilane (HCDS) is a chlorosilane used as a precursor for producing disilanes. It is a dioxidizer that is used in the production of silicon films and silicon nitride based films.

Flammability and Explosibility

Nonflammable

InChI:InChI=1/Cl6Si2/c1-7(2,3)8(4,5)6

Synthetic route

silicon (7440-21-3) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5) + perchlorotrisilane (13596-23-1)

Conditions	Yield
In neat (no solvent) chlorination of crude Si at 300-310 °C; best yield of SiCl4;;	A 80% B n/a C n/a

hexaphenyldisilane (1450-23-3) + acetyl chloride (75-36-5) → hexachlorodisilane (13465-77-5)

Conditions	Yield
With aluminium trichloride In hexane Ph3SiSiPh3, AlCl3 and CH3COCl in hexane were stirred overnight; hexane added; upper phase septd.; hexane removed (vac.); redistd.;	55%

chloroform (67-66-3) + trichlorosilane (10025-78-2) → 1,1,2,2-tetrachlorodisilane + tetrachlorosilane (10026-04-7, 53609-55-5) + 1,1,1,2,2-pentachlorodisilane (31411-98-0) + hexachlorodisilane (13465-77-5)

Conditions	Yield
byproducts: CH2Cl2; copyrolysis (1:1), quartz tube (550°C, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy;	A 1.3% B 46.7% C 1.9% D 1%

chloroform (67-66-3) + trichlorosilane (10025-78-2) → 1,1,2,2-tetrachlorodisilane + tetrachlorosilane (10026-04-7, 53609-55-5) + 1,1,1,2,2-pentachlorodisilane (31411-98-0) + trichloro(dichloromethyl)silane (1558-24-3) + hexachlorodisilane (13465-77-5)

Conditions	Yield
copyrolysis (1% CHCl3), quartz tube (575°C, retention time 30 s, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy;	A 1.7% B 25.8% C 5.1% D 0.7% E 1.6%

copper(l) chloride + silicon (7440-21-3) → tetrachlorosilane (10026-04-7, 53609-55-5) + copper silicide (12134-36-0) + hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) byproducts: Cu; CuCl particles were deposited on a Si wafer by dipping in a slurry of CuCl in hexane; coated wafer was heated at 380°C in a furnace for 1-60 min;; mixt. not sepd.;;

calcium chloride + silicon (7440-21-3) → hexachlorodisilane (13465-77-5) + calcium (7440-70-2)

Conditions	Yield
In neat (no solvent) vivious reaction under formation of Ca and Si2Cl6, which are burning;;

tetrachloromethane (56-23-5) + silicon (7440-21-3) → 1,1,2,2-tetrachloroethylene (127-18-4) + tetrachlorosilane (10026-04-7, 53609-55-5) + hexa-Si-chloro-Si,Si'-(1,2-dichloro-ethene-1,2-diyl)-bis-silane (5926-33-0) + 1,2-bis-(trichlorosilyl)acetylene (18038-55-6) + hexachlorodisilane (13465-77-5)

Conditions	Yield
copper In neat (no solvent) reaction of Si with gaseous CCl4 (in N2) with Cu as catalyst at 110-410°C;; products and yield depend on temp.;;

tetrachloromethane (56-23-5) + silicon (7440-21-3) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5)

Conditions	Yield
silver In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;
manganese In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;
nickel In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;

tetrachlorosilane (10026-04-7, 53609-55-5) → hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;;

ferrosilicon + chlorine (7782-50-5) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) passing Cl2 over ferrosilicon with 35-65% Si, begin of a strongly exothermic reactn. at 200 °C, 350 °C (yields of SiCl4: 80%), up to 600 °C (yields of SiCl4: 94%), formation of Si2Cl6 < 450 °C (3-10% of the amt. of SiCl4);;

Si(b),Ca(30-35) (X%) + chlorine (7782-50-5) → tetrachlorosilane (10026-04-7, 53609-55-5) + tetrasilicon decachloride (13763-19-4) + dodecachloro pentasilane (13596-24-2) + hexachlorodisilane (13465-77-5) + perchlorotrisilane (13596-23-1)

Conditions	Yield
In neat (no solvent) passing dry Cl2 through a glass tube, filled with Ca-silicide and heated by a electric spiral at 150-250 °C for about 12-14 days, further products;; fractional distillation;;

silicon iron + chlorine (7782-50-5) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5) + perchlorotrisilane (13596-23-1)

Conditions	Yield
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;;
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;;

difluorosilylene (13966-66-0) + chlorine (7782-50-5) + silicon tetrafluoride (7783-61-1) → ClF2SiSiF2Cl (108737-33-3) + Cl2FSiSiCl3 (18356-60-0) + F3SiSiCl3 (108737-34-4) + disilicon hexafluoride (13830-68-7) + hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) The halogen was co-condensed in a flask at -196°C with the mixt. of SiF4 and SiF2 emerging out of the reactor tube; further products;; warmed to room temp.; the volatile products were sepd. and detected by NMR and MS;;

bromine (7726-95-6) + perchlorotrisilane (13596-23-1) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5) + dibromo dichlorosilane (13465-75-3) + bromo trichloro silane (13465-74-2) + chloro tribromo silane (13465-76-4)

Conditions	Yield
In neat (no solvent) dropwise addn. of a mixture of Si3Cl8 and Br2 into a glass tube heated at 500°C under passing CO2 through the tube; reaction with inflammation;;

hydrogen + trichlorosilane (10025-78-2) → hexachlorodisilane (13465-77-5) + hydrogen (1333-74-0)

Conditions	Yield
In not given Kinetics; H produced by Hg-sensitized photolysis of H2;; monitored by Lyman-α absorption;;

tetrachlorosilane (10026-04-7, 53609-55-5) + silicon (7440-21-3) → hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) repeated passing SiCl4 vapor over molten Si;; rapid cooling; fractional distillation;;
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);;
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);;

hexaiododisilane (13510-43-5) → hexachlorodisilane (13465-77-5)

Conditions	Yield
With mercury dichloride In neat (no solvent)
With mercury dichloride at heating;;
With HgCl2 In neat (no solvent)
With HgCl2

hexaiododisilane (13510-43-5) + mercury dichloride → hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;;
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;;

calcium silicide + tin(ll) chloride → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) effect of a SnCl2-melt on CaSi2 forms Si2Cl6 and SiCl4;;

trichlorosilane (10025-78-2) → hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;;
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;;

tetrachlorosilane (10026-04-7, 53609-55-5) → hexachlorodisilane (13465-77-5) + hexachlorodisiloxane (14986-21-1)

Conditions	Yield
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;;
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;;
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;;
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;;

tetrachlorosilane (10026-04-7, 53609-55-5) + oxygen (80937-33-3) → hexachlorodisilane (13465-77-5) + hexachlorodisiloxane (14986-21-1)

Conditions	Yield
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;;

perchlorotrisilane (13596-23-1) → tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5)

Conditions	Yield
With Br2 In neat (no solvent)
With Br2 In neat (no solvent)

Si10Cl20H2 → tetrachlorosilane (10026-04-7, 53609-55-5) + silicon monochloride + trichlorosilane (10025-78-2) + hexachlorodisilane (13465-77-5) + perchlorotrisilane (13596-23-1)

Conditions	Yield
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;;
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;;

Si10Cl20H2 → hydrogenchloride (7647-01-0) + tetrachlorosilane (10026-04-7, 53609-55-5) + silicon monochloride + trichlorosilane (10025-78-2) + hexachlorodisilane (13465-77-5)

Conditions	Yield
In neat (no solvent) thermic decompn.;; cracking process;;
In neat (no solvent) thermic decompn.;; cracking process;;

perchlorotrisilane (13596-23-1) → i-Si4Cl10 (50683-29-9) + tetrakis(trichlorosilyl)silane (50350-62-4) + (Cl3Si)3SiSiCl2SiCl3 (1196525-75-3) + hexachlorodisilane (13465-77-5)

Conditions	Yield
With Na(Si-t-Bu3) In benzene byproducts: (t-Bu3Si)4Si, t-Bu3SiSi-t-Bu3, t-Bu3SiCl; under N2 or Ar; soln. of Cl3SiSiCl2SiCl3 and Na(Si-t-Bu3) (molar ratio 1:4) in benzene stirred at ambient temp. for 1 d; detd. by (29)Si NMR spectra;

Methyltrichlorosilane (75-79-6) + tetrachlorosilane (10026-04-7, 53609-55-5) → hexachlorodisilane (13465-77-5)

Conditions	Yield
under 225.023 Torr;

hexachlorodisilane (13465-77-5) + germaniumtetrachloride (10038-98-9) + tetraphenyl phosphonium chloride (2001-45-8) → Cl9GeSi3(1-)*C24H20P(1+)

Conditions	Yield
In dichloromethane at 20℃; for 12h;	99%
In dichloromethane at 20℃; for 12h;

hexachlorodisilane (13465-77-5) + tetra-n-butylphosphonium chloride (2304-30-5) → tetrachlorosilane (10026-04-7, 53609-55-5)

Conditions	Yield
With 2-methylimidazole at 175℃; for 2.5h; Sealed tube;	95%

hexachlorodisilane (13465-77-5) → disilane

Conditions	Yield
With lithium aluminium tetrahydride; calcium hydride In diethylene glycol dimethyl ether at 60℃; for 5h; Inert atmosphere; Reflux;	94%

hexachlorodisilane (13465-77-5) + tert-butylamine (75-64-9) → (HNBut)2(Cl)Si-Si(Cl)(HNBut)2 (690973-76-3)

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	93%
In diethyl ether at 0 - 20℃; Heating / reflux;	79%

hexachlorodisilane (13465-77-5) + tetraethylammonium chloride (56-34-8) + germaniumtetrachloride (10038-98-9) → Cl9GeSi3(1-)*C8H20N(1+)

Conditions	Yield
In dichloromethane at 20℃; for 1h; Schlenk technique; Inert atmosphere;	93%

hexachlorodisilane (13465-77-5) + 1,1,3,3-tetramethyldisilazane (15933-59-2) → bisdimethylsilyl pentachlorodisilylamine

Conditions	Yield
With triethylamine In pentane at -20 - 25℃; for 6h; Inert atmosphere;	90%

hexachlorodisilane (13465-77-5) + di-n-propylamine (142-84-7) → C24H56Cl2N4Si2

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	89%

lithium aluminium tetrahydride (16853-85-3) + tetrachlorosilane (10026-04-7, 53609-55-5) + hexachlorodisilane (13465-77-5) → disilane + monosilane (7440-21-3)

Conditions	Yield
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;;	A 87% B n/a
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;;	A 87% B n/a

sodium dicarbonyl(cyclopentadienyl)ferrate + hexachlorodisilane (13465-77-5) → 1-[dicarbonyl(η(5)-cyclopentadienyl)ferrio]-1,1,2,2,-pentachlorodisilane

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 3 d, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	86%

sodium[(η(5)-pentamethylcyclopentadienyl)Ru(CO)2] (174534-93-1) + hexachlorodisilane (13465-77-5) → 1,1,2,2,2-pentachloro-1-[dicarbonyl(η(5)-pentamethylcyclopdentadienyl)ruthenio]disilane

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	85%

hexachlorodisilane (13465-77-5) + ethylamine (75-04-7) → hexakisethylaminodisilane (532980-53-3)

Conditions	Yield
In hexane at 0 - 20℃; Heating / reflux;	84%
In 2-Methylpentane at -40 - 0℃; for 1h; Product distribution / selectivity; Industry scale;

hexachlorodisilane (13465-77-5) + diallylamine (124-02-7) → C24H40Cl2N4Si2

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	84%

hexachlorodisilane (13465-77-5) + ethylamine (75-04-7) → tetrakisdiethylamidodichlorodisilane

Conditions	Yield
In diethyl ether at 0 - 20℃; Heating / reflux;	82%

tetrakis(triphenylphosphine) palladium(0) (14221-01-3) + hexachlorodisilane (13465-77-5) → Pd(P(C6H5)3)2(SiCl3)2 (81313-98-6)

Conditions	Yield
In toluene complex added to soln. of Si compd., stirred for 19 h, under N2; evapd., washed with ether, recrystd. from benzene/hexane; elem. anal.;	82%

1-Chloropentane (543-59-9) + hexachlorodisilane (13465-77-5) → tetraamylsilane (3429-63-8)

Conditions	Yield
With Na In not given	80%

hexachlorodisilane (13465-77-5) → tetrakis(trichlorosilyl)silane (50350-62-4)

Conditions	Yield
In neat (no solvent) byproducts: SiCl3(SiCl3)(Me2NC2H4NMe2); Si2Cl6 was heated in presence of SiCl3(SiCl3)(Me2NC2H4NMe2) (catalyst) at 55°C for 15 h; NMR monitoring; filtered; evapd. (vac.);	80%
With pyridine at 20℃; Reagent/catalyst; Schlenk technique; Inert atmosphere; Cooling;	73%

lthium[bis(dimethylphosphanyl)(trimethylsilyl)methanide] (102493-28-7) + hexachlorodisilane (13465-77-5) → C16H42P4Si3

Conditions	Yield
With lithium dihydronaphthylide radical In tetrahydrofuran at -78℃; warming up to 0 deg C;	77%

hexachlorodisilane (13465-77-5) + dimethyl zinc(II) (544-97-8) → 1,1,1,2,2,2-hexamethyldisilane (1450-14-2)

Conditions	Yield
In diethyl ether Si2Cl6 and 31% excess of Zn(CH3)2 in ether at 85°C in a closed tube;;	74%

bis(pentafluorophenyl) sulfoxide (26346-84-9) + hexachlorodisilane (13465-77-5) → pentafluorophenyl sulfide (1043-50-1)

Conditions	Yield
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2;	73%
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2;	73%

2-thienyl chloride (96-43-5) + hexachlorodisilane (13465-77-5) + germaniumtetrachloride (10038-98-9) → (2-thienyl)trichlorogermane (119708-57-5)

Conditions	Yield
In neat (no solvent) pyrolysis, 450-550°C;	70%

lithium dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)tungstate + hexachlorodisilane (13465-77-5) → 1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)tungsten]disilane (174134-97-5)

Conditions	Yield
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.;	70%

hexachlorodisilane (13465-77-5) + pentafluorophenyl lithium (1076-44-4) → perfluorotetraphenylsilane (1524-78-3)

Conditions	Yield
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;;	69%
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;;	69%
In not given
In not given

sodium (pentamethylcyclopentadienyl)dicarbonylferrate + hexachlorodisilane (13465-77-5) → 1,1,2,2,2-pentachloro-1-[dicarbonyl(η(5)-pentamethylcyclopdentadienyl)ferrio]disilane

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); stirring with benzene (1 h), filtration, removement of solvent (vacuum),pptn. (pentane), filtration, washing (cold pentane), drying (vacuum); e lem. anal.;	63%

lithium [dicarbonyl(η(5)-cyclopentadienyl)(trimethylphosphine)tungsten(0)] + hexachlorodisilane (13465-77-5) → 1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-cyclopentadienyl)(trimethylphosphane)tungsten]disilane (174134-95-3)

Conditions	Yield
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.;	60%

hexachlorodisilane (13465-77-5) + diisobutylaluminium hydride (1191-15-7) → 1,1,1-trichlorodisilane (78228-96-3)

Conditions	Yield
at 0℃;	60%

lithium [dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphine)molybdenum(0)] (172217-74-2) + hexachlorodisilane (13465-77-5) → 1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)molybdenum]disilane (174134-96-4)

Conditions	Yield
In benzene byproducts: LiCl; (N2, exclusion of light); stirring (room temp., 12 h); filtration, evapn. (vac.), washing (pentane), addn. of methylcyclohexane, crystn. at -78°C; elem. anal.;	59%

Na[CpRu(CO)2] + hexachlorodisilane (13465-77-5) → 1-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)ruthenio]-1,1,2,2,-pentachlorodisilane

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 14 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	58%

hexachlorodisilane (13465-77-5) + dichlorodiphenylgermane (1613-66-7) → 1,2-bis(trichlorosilyl)-1,1,2,2-tetraphenyldigermane

Conditions	Yield
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h;	57%
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h;

Upstream product

• 7440-21-3 silicon 
• 14336-71-1 calcium chloride 
• 56-23-5 tetrachloromethane 
• 10026-04-7 tetrachlorosilane 
• 7782-50-5 chlorine 
• 1450-23-3 hexaphenyldisilane 
• 75-36-5 acetyl chloride 
• 13510-43-5 hexaiododisilane 
• 80937-33-3 oxygen 
• 13596-23-1 perchlorotrisilane 
• 75-79-6 Methyltrichlorosilane 
• 10025-78-2 trichlorosilane 
• 12013-56-8 calcium silicide 
• 67-66-3 chloroform 

Downstream Products

• 10026-04-7 tetrachlorosilane 
• 281-23-2 adamantane 
• 993-42-0 ethyl germanium trichloride 
• 13892-13-2 n-propyltrichlorogermane 
• 4872-26-8 n-butyltrichlorogermane 
• 51986-55-1 1-trichlorogermyladamantane 
• 112926-00-8 silica gel 
• 13977-54-3 diiododichlorosilane 
• 13465-75-3 dibromo dichlorosilane 
• 13465-74-2 bromo trichloro silane 
• 16726-63-9 silicon tetracyanate 
• 3410-77-3 tetraisocyanatosilane 
• 7440-21-3 silicon 
• 7647-01-0 hydrogenchloride 

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Reaction of HEXACHLORODISILANE (cas 13465-77-5) with bases and alkyl halides08/05/2019

Hexachlorodisilane decomposes according to the equation nSi2Cl6 = nSiCl4 + (SiCl2)n when heated with catalytic quantities of triphenylphosphine or triphenylarsine. No reaction occurs with tristrifluoromethylphosphine. Hexabromodisilane is similarly decomposed by trimethylamine. Hexachlorodisilan...detailed

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Synthesis of Wiberg's tetrasilatetrahedrane (tBu3Si) 4Si4 by a one-pot procedure

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The pyrolysis of trichlorosilane in the presence of different amounts of chloroform and the copyrolysis of HSiCl3 with buta-1,3-diene in the presence of 1 mol.% chloroform were studied. The enthalpies of formation of products resulting from the pyrolysis of HSiCl3 in the presence of chloroform were calculated by the quantum chemical method. Based on the thermochemical data as well as data from GLC and mass spectrometry, it was concluded from the condensate composition that introduction of chloroform into the zone of pyrolysis of HSiCl3 favors generation of silylenes.