1314-23-4Relevant articles and documents
MODIFIED ORGANOMETALLIC FRAMEWORK AND CATALYST FOR HYDROGENATION REACTION INCLUDING SAME
-
, (2022/03/14)
The present disclosure relates to an organometallic framework modified using a compound having a hydroxyl group (—OH), a catalyst for a hydrogenation reaction including the same, and a method of manufacturing the same. The catalyst according to the present disclosure has high activity to the hydrogenation reaction even at a low temperature of 30 to 40° C., thus making low-grade waste heat usable.
METHOD OF PRODUCING AROMATIC HYDROCARBONS FROM BYPRODUCTS OF AROMATIC CARBOXYLIC ACID AND/OR AROMATIC CARBOXYLIC ACID ALKYLESTER PREPARATION PROCESSES
-
Page/Page column, (2014/07/08)
This invention relates to a method of producing an aromatic hydrocarbon compound from byproducts of aromatic carboxylic acid and/or aromatic carboxylic acid alkylester preparation processes using hydroprocessing under conditions of high temperature and high hydrogen pressure in the presence of a catalyst, and to a hydroprocessing catalyst used therein.
Dental Posts
-
Page/Page column, (2013/03/28)
The present invention pertains to the technical field of dental restorations, especially dental posts. One aspect of the present invention is a radio-opaque coated dental post. The post essentially consists of a core embedded in a thermoplastic or duroplastic material. The core is further coated with yet another resin with at least one radio-opaque additive. X-ray visibility especially at the outer margin of the post is significantly improved.
Synthesis, capping and dispersion of nanocrystals
-
, (2012/04/18)
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
Ruthenium-based catalyst and use thereof in the selective hydrogenation of aromatic or polyunsaturated compounds
-
, (2012/05/20)
Catalyst suitable for the hydrogenation of aromatic or polyunsaturated compounds comprising a zirconia carrier (ZrO2), containing ruthenium, as catalyst, and iron oxide (Fe2O3), as promoter, characterized in that at least one metal oxide, selected from those of the groups IB, IIB and IIIA, is present on the carrier as further promoter.
DENTAL COMPOSITION AND COMPOSITE RESIN
-
, (2011/02/25)
A dental composition of the present invention includes: a polymerizable monomer (A); an amorphous filler (B) having an average particle size of 1 to 20 μm and including silica-based fine particles and coatings of an oxide that cover the surfaces of the silica-based fine particles; and inorganic particles (C) having an average particle of 0.1 to 1.0 μm. The oxide contains a zirconium atom, a silicon atom, and an oxygen atom. It is preferable that the dental composition contain 50 to 400 parts by weight of the filler (B) and 100 to 400 parts by weight of the inorganic particles (C) per 100 parts by weight of the polymerizable monomer (A).
Method for Preparing a Colloidal Zirconia Solution
-
, (2010/06/19)
A method for preparing a colloidal solution of non-aggregated zirconia particles, comprising the following steps: a) providing a zirconium hydroxide sol, b) adding to said sol an inorganic acid according to an [inorganic acid]/[Zr] molar ratio of 0.5, c) performing the hydrothermal treatment of said sol, and d) recovering the colloidal solution of zirconia particles.
METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING
-
, (2010/12/30)
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): ???????? (M11-aM2a)ObNc,?????(I) wherein 0 ≤ a 1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: - A step a) of providing a substrate into a reaction chamber; - A step (b) of vaporizing a M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, to form a first gas phase metal source; - A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate.
METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING
-
, (2009/08/18)
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): [in-line-formulae](M11-aM2a)ObNc,??(I)[/in-line-formulae] wherein 0≦a1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber;A step (b) of vaporizing a M1 metal containing precursor of the formula (II): [in-line-formulae](R1yOp)x(R2tCp)zM1R′4-x-z,??(II)[/in-line-formulae] wherein 0≦x≦3, preferably x=0 or 1, 0≦z≦3, preferably z=1 or 2, 1≦(x+z)≦4, 0≦y≦7, preferably y=2 0≦t≦5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate. Compound the formula (II1): [in-line-formulae](R2tCp)M1[N(R39)(R40)]3??(II1)[/in-line-formulae] corresponding to the formula (II) as hereinabove defined in Claim 1, wherein x=0, z=1 and R′ represents the group N(R39)(R40).
Infrared spectra and structures for Group 4 dihydroxide and tetrahydroxide molecules
Wang, Xuefeng,Andrews, Lester
, p. 10689 - 10701 (2008/10/09)
Hafnium and zirconium atoms react with H2O2 molecules and with H2 + O2 mixtures to form M(OH) 2 and M(OH)4 molecules, which are trapped in solid argon and identified from isotopic shifts in
