ORGANIC
LETTERS
2008
Vol. 10, No. 15
3307-3310
Highly Fluorinated
Benzobisbenzothiophenes
Yongfeng Wang,† Sean R. Parkin,† Johannes Gierschner,‡ and Mark D. Watson*,†
Department of Chemistry, UniVersity of Kentucky, Lexington, Kentucky 40506-0055,
Laboratory for Chemistry of NoVel Materials, UniVersity of Mons-Hainaut, Mons,
Belgium, and Instituto Madrilen˜o de Estudios AVanzados IMDEA Nanoscience,
Madrid, Spain
Received May 22, 2008
ABSTRACT
Expedient, facile syntheses of highly fluorinated benzobisbenzothiophenes (BBBT) are reported. Defined peripheral arrangements of sulfur
and fluorine atoms lead to extensive crystalline networks of edge-to-edge S-F close contacts. The effects of various substitution patterns on
self-assembly and electronic properties are described.
One of the many critical factors governing the performance of
organic semiconductors is the mode in which they self-assemble
to ordered arrays having extensive intermolecular orbital over-
lap.1 Some approaches to modify intermolecular orbital overlap
are the following: (a) increase the size of the π-system,2a (b)
decorate the periphery with groups that preclude edge-to-face
interactions,2b (c) enhance face-to-face interaction via attraction
between electron-rich and -poor segments,2c–e and (d) construct
peripheries from heteroatoms.2f
can convert known p- to n-types.3 Most organic semiconduc-
tors are p-types, such as pentacene,4 poly-3-hexylthiophene,
or oligothiophenes,5 while n-types are rarer.6 Lower LUMO
(3) (a) Jones, B. A.; Facchetti, A.; Wasielewski, M. R.; Marks, T. J.
J. Am. Chem. Soc. 2007, 129, 15259–15278. (b) Chesterfield, R. J.; Newman,
C. R.; Pappenfus, T. M.; Ewbank, P. C.; Haukaas, M. H.; Mann, K. R.;
Miller, L. L.; Frisbie, C. D. AdV. Mater. 2003, 15, 1278–1282. (c) Facchetti,
A.; Deng, Y.; Wang, A.; Koide, Y.; Sirringhaus, H.; Marks, T. J.; Friend,
R. H. Angew. Chem., Int. Ed. 2000, 39, 4547–4551. (d) Facchetti, A.;
Mushrush, M.; Yoon, M. H.; Hutchison, G. R.; Ratner, M. A.; Marks, T. J.
J. Am. Chem. Soc. 2004, 126, 13859–13874.
In addition to altering self-assembly, decoration with
electron-withdrawing groups such as imide, cyano, or fluorine
(4) (a) Lin, Y. Y.; Gundlach, D. J.; Nelson, S. F.; Jackson, T. N. IEEE
Electron DeVice Lett. 1997, 18, 606–608. (b) Kelly, T. W.; Boardman, L. D.;
Dunbar, T. D.; Muyres, D. V.; Pellerite, M. J.; Smith, T. P. J. Phys. Chem.
B 2003, 107, 5877–5881.
† University of Kentucky.
(5) (a) Chabinyc, M. L.; Toney, M. F.; Kline, R. J.; McCulloch, I.;
Heeney, M. J. Am. Chem. Soc. 2007, 129, 3226–3237. (b) Dimitrakopoulos,
C. D.; Purushothaman, S.; Kymissis, J.; Callegari, A.; Shaw, J. M. Science
1999, 283, 822–824. (c) Sirringhaus, H.; Brown, P. J.; Friend, R. H.; Nielsen,
M. M.; Bechgaard, K.; Langeveld-Voss, B. M. W.; Spiering, A. J. H.;
Janssen, R. A. J.; Meijer, E. W.; Herwig, P.; de Leeuw, D. M. Nature 1999,
401, 685–688.
‡ University of Mons-Hainaut and Instituto Madrilen˜o de Estudios
Avanzados IMDEA Nanoscience.
(1) Newman, C. R.; Frisbie, C. D.; da Silva, D. A.; Bredas, J. L.;
Ewbank, P. C.; Mann, K. R. Chem. Mater. 2004, 16, 4436–4451.
(2) (a) Watson, M. D.; Fechtenkoetter, A.; Muellen, K. Chem. ReV. 2001,
101, 1267–1300. (b) Anthony, J. E.; Eaton, D. L.; Parkin, S. R. Org. Lett.
2001, 4, 15–18. (c) Facchetti, A.; Yoon, M. H.; Stern, C. L.; Katz, H. E.;
Marks, T. J. Angew. Chem., Int. Ed. 2003, 42, 3900–3903. (d) Patrick, C. R.;
Prosser, G. S. Nature 1960, 187, 1021–1021. (e) Dai, C. ; Nguyen, P.;
Marder, T. B.; Scott, A. J.; Clegg, W.; Viney, C. Chem. Commun. 1999,
249, 3–2494. (f) Yamada, K.; Okamoto, T.; Kudoh, K.; Wakamiya, A.;
Yamaguchi, S.; Takeya, Y. Appl. Phys. Lett. 2007, 90, 072102.
(6) (a) Haddon, R. C.; Perel, A. S.; Morris, R. C.; Palstra, T. T. M.;
Hebard, A. F.; Fleming, R. M. Appl. Phys. Lett. 1995, 67, 121–123. (b)
Bao, Z.; Lovinger, A. J.; Brown, J. J. Am. Chem. Soc. 1998, 120, 207–208.
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Casado, J.; Raff, J. D.; Miller, L. L. J. Am. Chem. Soc. 2002, 124, 4184–
4185.
10.1021/ol8003468 CCC: $40.75
Published on Web 07/09/2008
2008 American Chemical Society