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2H), 7.84 – 7.77 (m, 5H), 7.76 – 7.68 (m, 4H), 7.59 – 7.46
(m, 5H), 7.44 – 7.33 (m, 5H), 7.15 – 7.13 (d, J = 8.0 Hz,
1H). MS (APCI) (m/z): [M+H+] calcd for C41H27N2, 547.7;
found, 547.2. 13C NMR (100 MHz, DMSO-d6) d (ppm)
150.68, 139.14, 138.75, 137.10, 135.92, 131.31, 131.25,
130.90, 130.81, 130.14, 129.79, 129.69, 129.60, 129.65,
128.94, 128.40, 128.23, 128.00, 127.25, 127.14, 126.46,
126.27, 126.23, 125.80, 125.75, 125.00, 124.17, 123.00,
122.53, 120.72. Anal. Calcd for C41H26N2: C, 90.08; H,
4.79; N, 5.12. Found: C, 89.90; H, 4.89; N, 5.21.
ent conditions. By the way, in counting the layers of the
device, we only consider the hole transport layer, emissive
layer and electron transport layer.
3. Results and discussion
3.1. Synthesis
The structures and synthetic routes of the three well-
defined compounds are shown in Scheme 1. Anthracen-
9-ylboronic acid, 9-(1-naphthyl)anthracene-10-boronic
acid, and 9-(2-naphthyl)anthracene-10-boronic acid were
synthesized according to the literature [14]. The interme-
diate 2-(4-bromophenyl)-1-phenyl-1H-phenanthro[9,10-
d]-imidazole was synthesized in high yield [12]. The title
products were prepared through the palladium-catalyzed
Suzuki coupling reaction of the intermediate and the corre-
sponding aryl boronic acid, then purified by column chro-
matography on silica gel using petroleum ether-
dichloromethane as the eluent. Repeated temperature-gra-
dient vacuum sublimation are required for further purifica-
tion of these materials used in OLEDs. All the new
compounds were fully characterized by 1H and 13C NMR,
mass spectrometry, and elemental analysis.
2.2.3. Synthesis of compound 1-NaCPI
The compound was synthesized using a similar proce-
dure as for compound ACPI, yield: 85%. 1H-NMR: (DMSO-
d6, 400 MHz): d (ppm) 8.99 – 8.97 (d, J = 8.0 Hz, 1H),
8.94 – 8.92 (d, J = 8.0 Hz, 1H), 8.79 – 8.77 (d, J = 8.0 Hz,
1H), 8.21 – 8.19 (d, J = 8.0 Hz, 1H), 8.15 – 8.13 (d,
J = 8.0 Hz, 1H), 7.96 – 7.71 (m, 10H), 7.62 – 7.51 (m, 7H),
7.46 – 7.28 (m, 8H), 7.17 – 7.15 (d, J = 8.0 Hz, 1H), 6.94 –
6.92 (d, J = 8.0 Hz, 1H). MS (APCI) (m/z): [M+H+] calcd for
C41H27N2, 547.7; found, 547.2. 13C NMR (100 MHz,
CDCl3) d (ppm) 136.68, 136.59, 135.31, 133.71, 133.58,
131.45, 131.40, 130.61, 130.29, 130.03, 129.76, 129.45,
129.25, 129.19, 128.40, 128.25, 128.16, 127.41, 127.11,
126.85, 126.61, 126.38, 126.29, 126.02, 125.77, 125.59,
125.22, 125.04, 124.20, 123.17, 123.06, 122.93, 120.96.
Anal. Calcd for C51H32N2: C, 91.04; H, 4.79; N, 4.16. Found:
C, 90.61; H, 4.87; N, 4.33.
3.2. Thermal properties
The thermal properties of the three compounds were
investigated by thermal gravimetric analysis (TGA) and dif-
ferential scanning calorimetry (DSC) under a nitrogen
atmosphere, and the related data are listed in Table 1.
Compounds ACPI, 1-NaCPI and 2-NaCPI exhibit good ther-
mal stability with decomposition temperatures (Td, 5%
weight loss) at 410, 441 and 473 °C, respectively. As shown
in Fig. 1, no obvious glass transition temperatures (Tg) are
observed for the three molecules, while endothermic melt-
ing transition temperatures (Tm) appear obviously at 290,
345 and 354 °C for ACPI, 1-NaCPI and 2-NaCPI, respec-
tively. Such high Tm and Td values indicate that these
compounds are stable and has the potential to be fabri-
cated into devices by vacuum thermal evaporation tech-
nology, which is highly desirable for high performance
OLED applications.
2.2.4. Synthesis of compound 2-NaCPI
The compound was synthesized using a similar proce-
dure as for compound APCI. Yield: 90%. 1H-NMR: (DMSO-
d6, 400 MHz): d (ppm) 8.97 – 8.95 (d, J = 8.0 Hz, 1H),
8.92 – 8.90 (d, J = 8.0 Hz, 1H), 8.80 – 8.77 (d, J = 8.0 Hz, 1H),
8.20 – 8.17 (d, J = 8.0 Hz, 1), 8.13 – 8.10 (d, J = 8.0 Hz, 1H),
8.04 – 8.01 (d, J = 10.0 Hz, 2H), 7.90 – 7.70 (m, 9H), 7.67 –
7.54 (m, 8H), 7.79 – 7.35 (m, 7H), 7.17 – 7.14 (d, J = 8.0 Hz,
1H). MS (APCI) (m/z): [M+H+] calcd for C51H33N2, 673.8;
found, 673.5. 13C NMR (100 MHz, DMSO-d6) d (ppm)
150.70, 139.38, 138.78, 137.18, 137.11, 136.35, 136.08,
133.50, 132.86, 131.37, 130.95, 130.88, 130.28, 130.25,
129.84, 129.74, 129.67, 129.55, 129.07, 128.60, 128.46,
128.29, 128.24, 128.03, 127.25, 127.18, 127.12, 127.04,
126.67, 126.31, 126.20, 126.14, 125.78, 125.04, 124.21,
123.02, 122.52, 120.73. Anal. Calcd for C51H32N2: C, 91.04;
H, 4.79; N, 4.16. Found: C, 90.61; H, 4.87; N, 4.33.
3.3. Morphology properties
2.3. Device fabrication and measurement
Since efficient film-forming properties of light emitting
materials are crucial for the performance of the devices,
the surface morphologies of vacuum-deposited thin films
of the three new compounds, ACPI, 1-NaCPI and 2-NaCPI,
were studied by atomic force microscopy (AFM). For a di-
rect comparison, we prepared both unannealed films and
thermally annealed samples films at 120 °C for 2 h under
an N2 atmosphere. As shown in Fig. 2, the unannealed film
samples exhibit a root-mean-square (RMS) roughness of
0.361, 0.384 and 0.280 nm for ACPI, 1-NaCPI and 2-NaCPI,
respectively. The annealed film exhibits a fairly smooth
The EL devices were fabricated by vacuum deposition of
the materials at a base pressure of 5 ꢁ 10ꢀ6 Torr onto glass
precoated with a layer of indium tin oxide (ITO) with a
sheet resistance of 25
X/square. Before deposition of an or-
ganic layer, the clear ITO substrates were treated with ox-
gen plasma for 5 min. The deposition rate of organic
compounds was 0.9–1.1 Å sꢀ1. Finally, a cathode composed
of cesium pivalate (2 nm) and aluminum (100 nm) was
sequentially deposited onto the substrate in the vacuum
of 10ꢀ5 Torr. The L–V–J of the devices was measured with
a Keithley 2400 Source meter and PR655. All measure-
ments were carried out at room temperature under ambi-
surface morphology with
a root-mean-square (RMS)
roughness of 0.283, 0.321 and 0.274 nm for ACPI, 1-NaCPI
and 2-NaCPI, respectively. The small RMS difference