C O M M U N I C A T I O N S
Scheme 2. Isomerization of the Disilyne 2 to Cyclotrisilene 6
the Si1 atom has a larger bond angle than the Si2 atom (when θ is
larger than 135°), Si1 is deshielded compared with Si2, which
supports the experimental values of the different 29Si NMR chemical
shifts of 2 (the Dsi2NpSi side has a larger bond angle and is more
i
deshielded than the Dsi2 PrSi side). Based on the calculations in
Figure 2b, we attribute the different 29Si chemical shifts of the two
triply bonded silicon atoms to the different RsSitSi bond angles
at each terminus. A more acute RsSitSi bond angle causes a
higher degree of 3s contribution to the in-plane π-orbital and as a
result a higher field 29Si NMR chemical shift (i.e., of the
Figure 1. ORTEP drawing of 2 (50% thermal ellipsoids). Hydrogen atoms
are omitted for clarity. Selected bond lengths (Å): Si1-Si2 ) 2.0569(12),
Si1-Si3 ) 2.3598(11), Si2-Si8 ) 2.3671(11), Si3-C1 ) 1.901(3),
Si3-C8 ) 1.909(3), Si3-C15 ) 1.920(3), Si8-C18 ) 1.908(3), Si8-C25
) 1.907(3), Si8-C32 ) 1.896(3). Selected bond angles (deg): Si3-Si1-Si2
) 138.78(5), Si1-Si2-Si8 ) 137.89(5).
i
Dsi2 PrSisSi*tSi part).
The unsymmetrically substituted disilyne 2 slowly underwent
isomerization in solution at room temperature, giving cyclotrisilene
derivative 6 as the sole product (Scheme 2).21 Although the
mechanism for the formation of cyclotrisilene 6 by the thermal
reaction of 2 is uncertain, we can suggest that the reaction pathway
would involve two steps: migration of the Dsi group followed by
cyclization of the SisSitSi unit. Interestingly, the rearrangement
and cyclization occurred only on the Dsi2NpSi side to produce 6
as the sole product, probably for steric reasons.
two triply bonded silicon atoms. Therefore, we have performed
density functional theory (DFT) calculations on Dsi2 PrSis
i
SitSisSiNpDsi2 (2) at the GIAO/B3LYP/6-31G(d)//B3LYP/6-
31G(d) level (see Supporting Information). The optimized structure
of 2 shows a large bond angle difference between the two silicon
i
termini; the RsSitSi bond angles are 134.8° for the Dsi2 PrSi side
and 141.5° for the Dsi2NpSi side, with a SitSi bond length of
2.091 Å. The calculated 29Si chemical shifts of the triply bonded
i
silicon atoms of 2 were 87.6 ppm for the Dsi2 PrSi side and 152.0
ppm for the Dsi2NpSi side, supporting the experimental values of
the different chemical shifts of the triply bonded silicon atoms.
Apeloig, Nagase et al. reported that small geometry changes in
the RsSitSi bond angle cause significant changes in the 29Si
chemical shifts of triply bonded silicon atoms.19 To provide an
estimate of the relationship between the 29Si chemical shifts of triply
bonded silicon atoms and the RsSitSi bond angles, calculations
were performed on the model compound Me3SisSi1tSi2sSiMe3
(2′). In these calculations, the bond angle of SisSi2tSi1 was fixed
at 135° and θ (SisSi1tSi2) was the variable parameter, θ (θ )
90° to 180°). The potential energy curve for the bond angle of
Me3SisSi1tSi2-SiMe3 is very flat (less than 1 kcal/mol) in the
range from 120° to 150° (Figure 2a). Therefore, the difference in
the bond angle of 2 between its X-ray structure and the optimized
calculated structure is most probably due to crystal packing forces.20
The calculated 29Si chemical shifts of the two skeletal silicon atoms
as a function of the bond angle θ are plotted in Figure 2b. As the
bond angle θ increases, the calculated 29Si values of Si2 are
significantly upfield shifted, from +100 (θ ) 135°) to -25 ppm
(θ ) 180°), whereas the calculated 29Si values of Si1 are downfield
shifted, from +100 (θ ) 135°) to +200 ppm (θ ) 180°). When
Acknowledgment. We are grateful to Prof. Yitzhak Apeloig
(Technion) for helpful discussions. This work was supported by a
Grant-in-Aid for Scientific Research (Nos. 19105001, 21350023,
21108502) from the Ministry of Education, Science, Sports, and
Culture of Japan.
Supporting Information Available: The experimental procedures
and spectral data for new compounds in Scheme 1, 1b, and 6,
computational results for the compound 2 and the model compound
2′, tables of crystallographic data, including atomic positional and
thermal parameters for 2 (PDF). This material is available free of charge
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Figure 2. Theoretical calculations on Me3SisSi1tSi2sSiMe3 2′ (the bond
angle of SisSi2tSi1 is fixed at 135° and θ (SisSi1tSi2) is the variable
parameter): (a) relative energies and (b) chemical shifts of skeletal silicon
atoms (red line for Si1 and blue line for Si2) calculated at the GIAO/B3LYP/
6-311G(d)//6-31G(d) level.
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