
Journal of Chemical Physics p. 4504 - 4510 (1985)
Update date:2022-08-03
Topics:
Nakamura, K.
Masaki, N.
Sato, S.
Shimokoshi, K.
The radicals formed by the reaction of SiH4 with H produced by the photolysis of HI in the matrices of Xe and Kr were investigated by electron spin resonance (ESR) spectroscopy at the temperatures between 4.2 and 100 K.The radicals observed were identified as SiH3 and SiHs.The newly observed radical SiHs is considered as the intermediate of the reaction SiH4 + H -> SiH3 + H2.The radical had two conformers; both were observed in a Xe matrix, while only one was observed in a Kr matrix.The ESR parameters of these radicals were determined by numerical deconvolution of the observed spectra.The hyperfine coupling of 29Si in silyl radicals isolated in Kr was determined accurately by the present method of the radical formation.The value obtained was 189.5 G instead of 266 G previously reported.
Wuhan Chemwish Technology Co., Ltd
website:http://www.chemwish.com/
Contact:+86-27-67849912
Address:Room 1311, Unit 2, Block1, Innovation Road East Lake High-tech Development Zone Wuhan, Hubei,P.R. China
Beijing Top Science biological technology co., LTD
Contact:+86-13439059536
Address:15-1705 jre three mile, Beijing 100000,CHINA
HangZhou HuaYe Chemical Technology Co.,Ltd
Contact:+86-13505815007
Address:hangzhou
Chongqing Shuangfeng Chemical Co.,Ltd
Contact:+86-23-49850156
Address:No.663,xuanhua Rd,yongchuan,chongqing,China
Wuxi Pharma-Trading Import & Export Co.,Ltd.
Contact:+86-510-82304590 82716390
Address:Room 523,Youzu Alliance Building,No.88 Renmin Zhonglu,Wuxi,Jiangsu,China
Doi:10.1016/S0022-328X(00)00130-3
(2000)Doi:10.1039/b002455o
(2000)Doi:10.1021/ol400754e
(2013)Doi:10.1002/hc.20408
(2008)Doi:10.1021/jo010375i
(2001)Doi:10.1016/S0968-0896(01)00319-4
(2002)