ChemPlusChem
10.1002/cplu.201600465
COMMUNICATION
respectively. The DFT-calculated HOMO energy levels of 1 and
2 are in good agreement with the corresponding experimental
values, while the calculated LUMO energy levels are higher than
the corresponding experimental values by a larger degree
similar to the reported N-hetero acenes.[7]
Since 1 and 2 are N-hetero analogues of rubrene and DPP,
respectively, it is interesting to test whether 1 and 2 can also
function as semiconductors in thin films. Therefore, thin films of
1 and 2 were deposited by thermal evaporation under a high
vacuum onto silicon wafers, whose SiO2 dielectric surface was
lattice plane parallel to the surface. Analysis of the crystal
structure reveals that molecules of
2 adopt an edge-on
orientation with the pentacene plane perpendicular to the
substrate surface when the (110) plane is parallel to the
substrate surface. The AFM image for the film of 2 exhibits
columnar crystallites in agreement with the crystalline nature of
the films. Therefore the higher field effect mobility of 2 in
comparison to DPP can be attributed to the higher ordering of
molecules in the polycrystalline films of 2. The pathways for
charge transport in the films of 2 presumably include the π-π
stacks within the column of 2 despite the large π-to-π distance
(Figure 3a) and the short C-to-C contacts between the columns
(Figure 3b). However, it remains an unanswered question why 2
easily crystallizes in the vacuum-deposited films but its
hydrocarbon analogue, DPP, with essentially the same
molecular geometry and crystal packing cannot form crystalline
films by vacuum deposition.
In summary, two novel N-phenylated N-heteroacenes 1 and
2 were synthesized and fully characterized. 1 differs from its
hydrocarbon analogue, rubrene, by having a bent backbone and
lacking π–π interactions in the solid state. In agreement with this
structure, 1 behaves as an insulator in thin films. In contrast, 2
has essentially the same molecular geometry and crystal
packing as its hydrocarbon analogue, DPP. But unlike DPP, 2
crystallizes in vacuum-deposited films functioning as a p-type
semiconductor with hole mobility higher than that of DPP by two
orders of magnitude.
pre-treated with
octadecyltrimethoxysilane (OTMS).
a
self-assembled monolayer (SAM) of
[ 26 ]
The device fabrication
was completed by depositing a layer of gold on the organic films
through a shadow mask to form top-contact source and drain
electrodes. The resulting devices had highly doped silicon as the
gate electrode and a 300 nm-thick layer of SiO2 as dielectrics.
Not surprisingly, the films of 1 behaved as an insulator in
agreement with the lack of π–π interactions in the solid state. In
contrast, 2 functioned as p-type semiconductors with a field
effect mobility of 0.012 ± 0.003 cm2 V–1 s–1 as measured in
ambient air from at least 20 channels. The highest mobility of 2
is 0.02 cm2 V–1 s–1 as extracted from the transfer I-V curve shown
in Figure 6, using the equation: IDS = (µWCi/2L)(VGS – Vth)2,
where IDS is the drain current, µ is the field-effect mobility, Ci is
the capacitance per unit area for the OTMS-modified SiO2
dielectric, W is the channel width, L is the channel length, VGS
and Vth are the gate and threshold voltage, respectively. The
mobility of 2 is higher than the reported mobility of DPP (8×10–5
[15]
cm2 V–1 s–1) in amorphous vacuum-deposited films
orders of magnitude.
by two
Acknowledgements
We thank Ms. Hoi Shan Chan (the Chinese University of Hong
Kong) for the single crystal crystallography. This work was
supported by the Research Grants Council of Hong Kong
(GRF402613).
Keywords: arenes • polycycles • N-heterocycles • organic
semiconductors
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