498
SOROKIN et al.
a = 12.4(3), b = 10.12(9), and c = 7.911(6) ] ap-
log( T) [S cm 1 K]
peared in the diffraction pattern (Fig. 1b). The values
available from Powder Diffraction File, Data Cards,
JCPDS, no. 16-0795, are a = 12.86, b = 10.05, and
c = 7.91
.
Heating to 100 C is accompanied by weight loss
(1.4 wt %). On cooling to 80 C, a clear endothermic
peak, lacking in the heating curve, was recorded. This
peak can be assigned to decomposition:
2NH4SnF3
NH4Sn2F5 + NH3 + HF .
This reaction is complete at a weight loss of
9.6 wt %, i.e., in the course of taking DTA curves
15% of the initial NH SnF decomposed.
4
3
1
103/T, K
Thus, the samples were NH SnF after the first
4
3
Fig. 2. log( T) T plot. ( ) Conductivity of ammonium
fluorostannates(II). Sample 1: (1) heating 1, (2) cooling 1,
(3) heating 2, and (4) cooling 2; sample 2: (5) heating 1 and
(6) cooling 1.
heating to 90 C and an NH SnF + NH Sn F mix-
4
3
4
2 5
ture after cooling and the second heating cooling
cycle. Apparently, a comparatively high electrical con-
ductivity observed in this case in the samples studied
(NH SnF + NH Sn F ) is completely determined
from thoroughly ground NH SnF powder under
a pressure of 4 5 MPa. The error in measuring was
less than 5%. The activation energy E of the elec-
trical conductivity was found from the formula
4
3
4
2 5
4
3
by the formation of ammonium pentafluorostan-
nate(II). The obtained data on the phase transition
agree with the results of [2, 5, 6], according to which
the phase transition in NH Sn F occurs at 75 C [2,
a
4
2 5
5] or 70 84 C [6]. A small thermal effect accompany-
ing this transition shows that the NH Sn F polymor-
T = A exp( Ea /kT),
4
2 5
phous modifications being formed have similar struc-
where A is the preexponential factor.
6
1
tures. The conductivity value
= 3 10 S cm
In measurements, the temperature was increased
and decreased in steps, during each measurement it
was kept constant.
at 20 C is close to the published value ( = 1
6
1
10 S cm at 27 C [7]), and the activation energy
E = 0.52 eV (20 75 C) reasonably agrees with the
a
The conductivity of the NH SnF samples heated
4
3
published values for NH Sn F (E = 0.5 [2, 5] and
4
2 5
a
for the first time to 90 C remained lower than the sen-
0.65 eV [7]).
sitivity of the device (the total resistance exceeded
7
The phase transition in NH Sn F is accompanied
4
2 5
10
). The low values of the NH SnF conductivity
4 3
by an approximately twofold increase in the activa-
tion energy of the ionic transfer and increase in the
electrical conductivity by an order of magnitude. The
in this temperature range are close to
of alkali
metal trifluorostannates at room temperature {
9
1
10 S cm [1]}. Above 90 C, dramatically grows
(Fig. 2). On cooling and secondary heating, the com-
pound showed a complex behavior indicative of
hysteresis and phase transition. The transition region
is recorded at 84 5 on heating and at 74 5 C on
cooling. The temperature of the onset of the transition,
as determined from both cooling and heating curves,
is 78 2 C.
3
1
ionic conductivity reaches 10 S cm at 100 C. The
high conductivity of NH Sn F above 80 C was also
4
2 5
observed in [5 7]. The obtained value of the activa-
tion energy for the high-temperature modification
(E = 0.3 eV) is close to the published value (E =
a
a
0.34 eV at T>84 C [6]).
The measurement of the transferrence numbers for
electrons (t ) in MSn F shows that the contribution
To interpret the results, we measured the diffrac-
tion patterns of the sample after measurements of at
various temperatures and performed thermogravimetric
e
2 5
of electronic transfer to the total electrical conductiv-
5
ity is insignificant: for RbSn F t
2 10 at 122
2 5 e
1
168 C [7]. The structural elements of NH Sn F are
ammonium ions [NH ] and complex anions [Sn F ] .
Therefore, it was important to reveal their role in
analysis (Pt crucible, heating/cooling rate 10 deg min ,
4
2 5
+
heating to 115 C). In addition to the NH SnF lines,
4
2 5
4
3
the lines due to NH Sn F [rhombic crystal system,
4
2 5
RUSSIAN JOURNAL OF APPLIED CHEMISTRY Vol. 76 No. 3 2003