C O M M U N I C A T I O N S
Maerker, C.; Kapp, J.; Schleyer, P. v. R. In Organosilicon Chemistry:
from Molecules to Materials; Auner, N., Weis, J., Eds.; VCH: Weinheim,
1996; Vol. II. (c) Reed, C. A. Acc. Chem. Res. 1998, 31, 325. (d) Lickiss,
P. D. In The Chemistry of Organic Silicon Compounds; Rappoport, Z.,
Apeloig, Y., Eds.; John Wiley & Sons Ltd.: New York, 1998; Vol. 2,
Part I, Chapter 11. (e) Zharov, I.; Michl, J. In The Chemistry of Organic
Germanium, Tin and Lead Compounds; Rappoport, Z., Ed.; John Wiley
& Sons Ltd.: New York, 2002; Vol. 2, Part I, Chapter 10.
the counteranion is greater than 5 Å, which is outside of the range
of van der Waals interactions. The average Si-Sn bond length in
2 was 2.6863(8) Å, which is quite normal for the Si-Sn bond
length.12 On the other hand, the average Si-Sn bond length in 1
of 2.6176(5) Å is shorter than that in 2, which can be explained by
the hyperconjugation between the 5pz-orbital on the Sn atom and
the σ*-orbitals of the Si-C(tBu) bonds in 1.
(3) For isolable silyl and germyl radicals, see: (a) Olmstead, M. M.; Pu, L.;
Simons, R. S.; Power, P. P. Chem. Commun. 1997, 1595. (b) Sekiguchi,
A.; Matsuno, T.; Ichinohe, M. J. Am. Chem. Soc. 2001, 123, 12436. (c)
Sekiguchi, A.; Fukawa, T.; Nakamoto, M.; Lee, V. Ya.; Ichinohe, M. J.
Am. Chem. Soc. 2002, 124, 9865.
(4) For free silyl and germyl cations, see: (a) Sekiguchi, A.; Tsukamoto,
M.; Ichinohe, M. Science 1997, 275, 60. (b) Sekiguchi, A.; Matsuno, T.;
Ichinohe, M. J. Am. Chem. Soc. 2000, 122, 11250. (c) Kim, K.-C.; Reed,
C. A.; Elliott, D. W.; Mueller, L. J.; Tham, F.; Lin, L.; Lambert, J. B.
Science 2002, 297, 825. (d) Sekiguchi, A.; Fukawa, T.; Lee, V. Ya.;
Nakamoto, M.; Ichinohe, M. Angew. Chem., Int. Ed. 2003, 42, 1143.
(5) Zharov, I.; King, B. T.; Havlas, Z.; Pardi, A.; Michl, J. J. Am. Chem.
Soc. 2000, 122, 10253.
(6) During the reviewing of this paper, the crystal structure of a free Tip3Sn+
(Tip ) 2,4,6-triisopropylphenyl) appeared, see: Lambert, J. B.; Lin, L.;
Keinan, S.; Mu¨ller, T. J. Am. Chem. Soc. 2003, 125, 6022.
The crucial point is the chemical shift of the free cationic Sn
atom, which was anticipated to be greatly deshielded.2e According
to an extrapolation based on the empirical correlation of 29Si and
119Sn NMR chemical shifts, one can expect the resonance of the
free stannylium ion to be in the range of +1500-2000 ppm.13 In
fact, the real free stannylium ion is even more deshielded: careful
measurement of the 119Sn NMR spectrum of 2 in CD2Cl2 allowed
us to detect the signal corresponding to the cationic Sn atom at
+2653 ppm.8 It is worth mentioning that this value is much more
downfield shifted than any of the very few other examples reported
for stannylium ions: counteranion-coordinated nBu3Sn+ (+454
ppm),5 Mes3Sn+ (+806 ppm),14 and Tip3Sn+ (+714 ppm).6
Moreover, the chemical shift of +2653 ppm greatly exceeds the
calculated value for a free triorganostannylium ion of ca. +1000
ppm calculated at the HF/DZ+P and MP2/DZ+P levels using
IGLO/DZ and IGLO/DZ+P methods.15 The 119Sn NMR chemical
shift of +2841 ppm calculated for the model stannylium ion (H3-
Si)3Sn+ at the GIAO-B3LYP/[7s6p5d](Sn):6-311G(d)(Si,C,H)//
B3LYP/[6s5p4d](Sn):6-31G(d)(Si,C,H) level using the Gaussian 98
program agrees reasonably with the experimental value of +2653
ppm.
(7) In this reaction, SnCl2-dioxane plays two roles: as a substrate for the
generation of the stannyl anion, and as a one-electron oxidizing reagent.
The right choice of the oxidizing reagent was crucial. Thus, when we
used SnCl2 itself, we were not able to isolate the stannyl radical because
t
of unavoidable direct oxidation of Bu2MeSiNa by SnCl2 (E1/2(red) )
-0.21 and -1.20 V) to form tBu2MeSiSiMetBu2 and metallic tin.
However, when we applied SnCl2-dioxane complex (E1/2(red) ) -0.78
V), in which the oxidizing ability of the stannylene unit is decreased by
complexation with dioxane, we have achieved the exact matching of redox
properties of SnCl2-dioxane and tBu2MeSiNa to prevent the undesirable
direct oxidation of silylsodium. For electrochemical studies of SnCl2 and
SnCl2-dioxane, see: Lee, V. Ya.; Basova, A.; Matchkarovskaya, I. A.;
Faustov, V. I.; Egorov, M. P.; Nefedov, O. M.; Rakhimov, R. D.; Butin,
K. P. J. Organomet. Chem. 1995, 499, 27.
(8) For the experimental procedures, spectral data, crystal data of 1 and 2,
EPR chart of 1, and NMR charts of 2, see the Supporting Information.
(9) All other experimentally known to date stannyl radicals were found to be
pyramidal σ-radicals: Iley, J. In The Chemistry of Organic Germanium,
Tin and Lead Compounds; Patai, S., Ed.; John Wiley & Sons Ltd.: New
York, 1995; Chapter 5.
Acknowledgment. We thank Mr. Kazuya Ishimura and Prof.
Shigeru Nagase at IMS for theoretical calculations on the stannylium
ion.
(10) Typical g-values for Sn-centered radicals range from 1.988 to 2.027 (see
ref 9).
Supporting Information Available: Experimental procedures,
spectral data of 1 and 2, tables of crystallographic data including atomic
positional and thermal parameters for 1 and 2, EPR chart of 1, NMR
charts of 2 (PDF and CIF). This material is available free of charge
(11) Typical hfcc values for Sn-centered radicals a(119Sn) and a(117Sn) lie in
the region 132.5-342.6 mT (see ref 9).
(12) Normal Si-Sn bond lengths lie in the region 2.561-2.789 Å: Mackay,
K. M. In The Chemistry of Organic Germanium, Tin and Lead Com-
pounds; Patai, S., Ed.; John Wiley & Sons Ltd.: New York, 1995; Chapter
2.
(13) Arshadi, M.; Johnels, D.; Edlund, U. Chem. Commun. 1996, 1279.
(14) Lambert, J. B.; Zhao, Y.; Wu, H.; Tse, W. C.; Kuhlmann, B. J. Am. Chem.
Soc. 1999, 121, 5001.
References
(1) For recent reviews on radicals of heavier group 14 elements, see: (a)
Chatgilialoglu, C. Chem. ReV. 1995, 95, 1229. (b) Power, P. P. Chem.
ReV. 2003, 103, 789.
(2) For recent reviews on cations of heavier group 14 elements, see: (a)
Lambert, J. B.; Kania, L.; Zhang, S. Chem. ReV. 1995, 95, 1191. (b)
(15) Cremer, D.; Olsson, L.; Reichel, F.; Kraka, E. Isr. J. Chem. 1994, 33,
369.
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