Table 1. Wavelengths of absorption and photoemission spectral
peaks, maximum absorption coefficients, and quantum efficiencies
for the oligothiophene solutions
Table 2. Measured reduction potentials and HOMO and LUMO
energies of the oligothiophenes estimated from DFT calculations
a)
a)
Eox
Ered
¦Ea)
/eV
HOMOb) LUMOb) ¦EDFT
a)
abs
b)
-
-
¾
Φf
/%
/V
/V
/eV
/eV
/eV
em
Sample
Solvent
¹1
/nm
/nm
/M¹1 cm
4TTh
4CnTTh
0.33
0.5
®
®
¹4.88
¹5.20
¹1.95
¹2.43
2.93
2.77
4TTh
THF
DMSO
THF
412
418
415
427
495
501
443
543
83000
58000
59000
40000
3.6
3.5
0.14
0.025
¹1.95 ¹2.45
aMeasured in CH2Cl2 containing 0.1 M n-Bu4NClO4 as a supporting
electrolyte at room temperature. bCalculations were performed using
DFT with the restricted B3LYP functional and the 6-31G(d) basis set,
as implemented in Gaussian 09.
4CnTTh
DMSO
b
aConcentration: 1.2 © 10¹5 mol L¹1. Excitation at 365 nm.
from density functional theory (DFT) calculations. The dipole
moment of 4CnTTh is 3.97 D, which is approximately five times
larger than that of 4TTh (0.78 D), but the electron clouds in the
conjugated backbone are delocalized for the HOMO and LUMO
level (Figure S5, SI). The energies of both the HOMO and LUMO
of 4CnTTh are lower than those of 4TTh, and the reduction of the
LUMO is larger than that of the HOMO, which reduces the energy
band. Additionally, the effect of solvent polarity on -abs was also
estimated by time-dependent (TD)-DFT method, and the result
is provided in ST1 (SI). Red shift in -abs is observed and
bathochromic effect became larger in 4CnTTh, supporting the
experimental results although the change was slight. On the other
hand, difference in the photoemission behavior of the oligothio-
phens was more prominent; the PL spectrum peak of 4CnTTh
showed large red shift when it was dissolved in DMSO, while
4TTh showed a slight change. In addition, the photoemission
intensity of the 4CnTTh solution is weaker than that of the 4TTh
solution, as shown in the inset of Figure 2 and Table 1. Sun et al.
reported that ICT was induced in oligothienylene derivatives with
electron-withdrawing substitution by polar solvents,8 followed by
geometric twisting (TICT).9 They also indicated that the PL of the
compounds in nonpolar solvents is emitted from the fluorescent
states with planar conformations that showed small difference
between the compound with and without EW substitution,
presuming that the same mechanism occurred in our compounds
due to the similarity of chemical structure and the effect of solvent
polarity on absorbance and photoemission.
Cyclic voltammetry measurements of the compounds were
conducted in CH2Cl2 in the presence of n-Bu4NClO4 (0.1 M) using
Fc/Fc+ as an internal standard (Table 2). For compound 4CnTTh,
quasi-reversible one-electron oxidation and one-electron reduction
were observed at the half-wave potentials of 0.50 and ¹1.95 V vs.
Ag+/Ag, respectively. The cyclic voltammograms for compound
4TTh indicate only an ambiguous one-electron oxidation at 0.33 V,
without any reversible reduction peaks within the electrochemical
window of the electrolyte solution (Figure S6, SI). The introduc-
tion of the cyano groups at the ethylene linkages reduced the
LUMO level, which leads to the expected positive shift of the
reduction potential and stable anion species are observed.
Figure 3. Double logarithmic plots of transient photocurrent curves
for hole transport in 4TTh (A) and 4CnTTh (B) under various applied
voltages in a 4 ¯m cell irradiated with 356 nm light. Applied voltage:
50 V (red); 40 V (blue); 30 V (green); 20 V (purple); 10 V (pink); 0 V
(black). Black arrows indicate kink point of the photocurrent when the
applied voltage was 50 V.
of dipolar moment orientation was generated in LC phase and it
remained in the thiophene solid, causing distribution of the HOMO
levels. In amorphous organic semiconductors, this distribution of
the energy levels of the π-orbitals leads to a decrease in the carrier
mobilities and their field- and temperature-dependence.11
Thin films of the oligothiophenes were prepared by subli-
mation onto quartz substrates, and their surface profiles were
investigated. Figure 4A shows an X-ray diffraction (XRD) pattern
for 4TTh, which corresponds to a d-spacing of d = 2.38 nm. The
4TTh film had a small angle reflection at 2ª = 3.71°, consistent
with the molecular length of the 4TTh molecule (2.39 nm)
estimated from DFT calculations. An atomic force microscopy
(AFM) image for the 4TTh film is shown on the right side of
Figure 4A, where small circular grains (< 0.2 ¯m) and a smooth
surface (Rq µ 2.0 nm) were observed. To further evaluate the
surface profile of the 4TTh film, the angular dependency of a probe
beam was measured using polarized absorption spectroscopy. The
detailed geometry of the optical setup is shown in Figure S1 (SI),
and angular-dependent absorption spectra are summarized in
Figure S7A (SI). The absorption peak for the film is approximately
343 nm, which is shorter than that for the THF solution, and the
absorbance increased with the tilt angle. In addition, the PL
spectrum of the substrate was similar to that of solution with low
intensity, as displayed in Figure S8 (SI), which indicates that 4TTh
aligned normal to the substrate and formed H-aggregation.
The carrier transport characteristics of the oligothiophenes
were examined using the time-of-flight (TOF) technique.10 Transit
times were determined from kink points in double logarithmic
plots of the transient photocurrent curves. The arrows in Figure 3
indicate the transit times for 4TTh and 4CnTTh. The hole
¹2
mobilities at 50 V are calculated to be 2.1 © 10 and 4.6 ©
¹1
10¹3 cm2 V¹1 s for 4TTh and 4CnTTh, respectively. The lower
field-dependent hole mobility of 4CnTTh should be attributed to
the local electric field produced by dipole moments of the cyano
groups of 4CnTTh molecules. Unlike molecular crystals, disorder
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