Plasma-enhanced chemical vapor deposition of silicon dioxide using tetraethylorthosilicate (TEOS)

Article abstract of DOI:10.1149/1.2096461

This paper presents a study on plasma-assisted chemical vapor deposition of silicon dioxide films using tetraethylorthosilicate (TEOS). It was found that when oxygen is utilized as an oxidant, the resulting film contained approximately 1 atom percent (a/o) of nitrogen or carbon, whereas using N₂O in the reaction slightly increased the nitrogen concentration to 2 a/o. However, in the absence of oxidant, the carbon and nitrogen concentrations were approximately 18 and 6 a/o, respectively. The step coverage of the film, regardless of the oxidant, was approximately 34%, a substantial improvement, compared to the 10% obtained for oxide films deposited using silane-based chemistry. The refractive index, infrared spectrum, and film density appear characteristic of deposited SiO₂ films. The electrical characterization of the TEOS-O₂ films yielded a breakdown electric field greater than 6.6 MV/cm, and a leakage current density of 8 × 10^-9 A/cm² at 1 MV/cm. The breakdown electric field and leakage current density of a thermally grown oxide with comparable thickness are 8 MV/cm and 2 × 10^-9 A/cm², respectively.

Full text of DOI:10.1149/1.2096461

Downloaded on 2015-04-21 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-21 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-21 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-21 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-21 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).